Method for preparing light emitting element

A technology for light-emitting components and atmospheres, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of carrier leakage, non-radiative recombination center, increase, and high defect density of epitaxial structures, and achieves improvement of wavelength uniformity and warpage. , the effect of enhancing the effect

Active Publication Date: 2015-03-04
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the defect density of the epitaxial structure formed by this method is still as high as 1×10 8 ~1×10 10 cm -2 , and cause carrier leakage and non-radiative recombination centers to increase, reducing the internal quantum efficiency of the device

Method used

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  • Method for preparing light emitting element
  • Method for preparing light emitting element
  • Method for preparing light emitting element

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Experimental program
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Effect test

Embodiment 1

[0036] attached Figure 1~4The first preferred embodiment of the present invention is disclosed. A method for preparing a light-emitting element. First, a substrate 1 is provided, which can be sapphire, silicon, silicon carbide, etc. Here, a sapphire flat substrate is preferred, and it is placed in a PVD chamber, and the temperature of the chamber is adjusted to 300-600°C , the pressure is 2-10mtorr, and the AlN film layer 2 with a thickness of 10-350nm is deposited by PVD method. ℃, through the metal source, NH3, H2 epitaxial growth of Al x Ga 1-x N (0≤xfigure 1 shows the growth of Al x Ga 1-x Schematic diagram of the structure after N (0≤x<1) layers.

[0037] in Al x Ga 1-x After the N (0≤xx Ga 1-x N (0≤x figure 2 shown. Figure 4 For the change over time during the preparation of the light-emitting element in this implementation, NH 3 , metal source, H 2 Schematic diagram of the relationship between valve open (on) / off (off) state and temperature change, which sh...

Embodiment 2

[0041] see attached Figure 5 and 6 , the difference between this embodiment and embodiment 1 is: the annealing process is all H 2 Ambience, i.e. in H 2 Turn off the metal source and NH3 while still connected, and change the chamber temperature from Al to 500s x Ga 1-x The growth temperature (400-600) of the N (0≤x2 Etching strength is higher than that of NH 3 more obvious, so when the temperature rises, the Al x Ga 1-x N (0≤x2 For the formed Al x Ga 1-x N layer 3 is etched, when part thickness is thinner Al x Ga 1-x When the N layer 3 is etched to expose the underlying AlN film layer 2, H 2 Continue to etch the AlN film layer 2 to form an over-etched uneven shape on the surface, then when the GaN layer 4 is subsequently deposited, the growth rate of the GaN layer 4 on the surface of the over-etched AlN film layer is lower than that of the island-like or irregular shape after annealing. Al x Ga 1-x The growth rate of the GaN layer 4 on the surface of the N layer 3...

Embodiment 3

[0043] Please see attached Figure 7-9 , The difference between this embodiment and Embodiment 1 is that a patterned substrate 1 is used, preferably a convex patterned substrate, which can be a platform-shaped, tapered or cylindrical, etc. prepared by wet etching or dry etching. Raised periodic pattern. First, put the patterned substrate 1 into the PVD chamber, deposit the AlN film layer 2, and then transfer the substrate coated with the AlN film layer 2 into the CVD chamber, and epitaxially grow Al x Ga 1-x N (0≤x Figure 7 shown. Then use H 2 Vibe and NH 3 Combined atmosphere for annealing treatment, the specific annealing method and conditions can refer to embodiment 1, using H 2 The strong etching performance and high temperature conditions have a great influence on the Al x Ga 1-x N layer 3 is etched and recrystallized, because the Al on the sidewall and top of the pattern x Ga 1-x The thickness of the N layer is higher than that of Al x Ga 1-x The N layer is re...

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Abstract

The invention discloses a method for preparing a light emitting element. The method comprises the following steps: growing gallium nitride on a flat sheet or a graphic substrate which is plated with AIN, and further performing annealing treatment in the presence of H2 or combined thermal treatment in the presence of H2 and NH3. Therefore, the problem of stress of a buffer material is changed, the epitaxial wafer warping caused by the stress is alleviated, the epitaxial quality of the light emitting element is improved, and the light emission efficiency of the light emitting element is improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode preparation, in particular to a method for preparing a light-emitting element. Background technique [0002] Light-emitting diodes have the advantages of energy saving, environmental protection, and long life, and have been widely used in LCD backlights, outdoor displays, landscape lighting, and general lighting. At present, the main blue and green light-emitting devices are nitride semiconductors. The epitaxial growth mainly includes homoepitaxial growth and heteroepitaxial growth. The homoepitaxial growth is grown on a substrate that matches the nitride semiconductor lattice, such as GaN substrate. Heteroepitaxial growth is grown on substrates that do not match the lattice of nitride semiconductors, such as sapphire substrates, silicon substrates, etc. [0003] Due to the high cost of homoepitaxial growth substrates, heteroepitaxial growth substrates are mainly used at present. Du...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/007H01L33/12H01L33/32H01L33/20H01L33/22
Inventor 李政鸿周圣伟林继宏林兓兓张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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