Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pretreatment method of aluminum nitride substrate for copper cladding

An aluminum nitride substrate and pretreatment technology, which is used in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of low peel strength, poor temperature cycle resistance, and high porosity, and promote uniformity effect of growth, improved wetting, reduced process conditions

Active Publication Date: 2016-03-02
HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has the following advantages: it not only significantly reduces the process conditions of thermal oxidation of the substrate, but also promotes the uniform growth of the oxide layer; it also improves the wettability of the substrate to copper oxide at high temperature, and improves the current aluminum nitride DBC substrate with high porosity and peeling. The problem of low strength and poor temperature cycle resistance simplifies the preparation process of aluminum nitride DBC

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pretreatment method of aluminum nitride substrate for copper cladding
  • Pretreatment method of aluminum nitride substrate for copper cladding
  • Pretreatment method of aluminum nitride substrate for copper cladding

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0033] Example 1, such as figure 2 The aluminum nitride DBC structure is shown, the ceramic thickness is 0.635mm, and the length and width are 76.2mm.

[0034] Put the self-made aluminum nitride substrate into the degreasing solution and ultrasonically clean it for 10 minutes, and the surface is clean and free of oil.

[0035] The aluminum nitride substrate was placed in a NaOH solution with a concentration of 0.1mol / L for activation, and ultrasonic treatment was used for 5 minutes, ultrasonic power was 60%, and water temperature was 60°C.

[0036] A transition layer was prepared on the surface of the activated aluminum nitride substrate by dipping method, the molar content of manganese nitrate in the transition layer was 0.01mol / L, copper sulfate was 0.01mol / L, and the additive sodium citrate was 0.005mol / L.

[0037] The aluminum nitride substrate with the prepared transition layer needs to be pretreated at 300°C and cooled naturally, so that the transition layer forms a un...

example 2

[0039] Example two, such as figure 2 The aluminum nitride DBC structure is shown, the ceramic thickness is 0.635mm, and the length and width are 76.2mm. Put the self-made aluminum nitride substrate into the degreasing solution and ultrasonically clean it for 10 minutes, and the surface is clean and free of oil.

[0040] The aluminum nitride substrate was placed in a NaOH solution with a concentration of 0.1mol / L for activation, and ultrasonic treatment was used for 5 minutes, ultrasonic power was 60%, and water temperature was 60°C.

[0041] Prepare a transition layer on the surface of the activated aluminum nitride substrate by dipping method. The molar content of manganese nitrate in the transition layer is 0.01mol / L, copper sulfate is 0.005mol / L, calcium nitrate and aluminum sulfate are 0.001mol / L each, additives Sodium citrate 0.005mol / L.

[0042] The aluminum nitride substrate with the prepared transition layer needs to be pretreated at 300°C and cooled naturally, so t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
peel strengthaaaaaaaaaa
peel strengthaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a copper pour use aluminum nitride substrate pretreatment method which is a key process in the preparation process of an aluminum nitride DBC (direct bond copper) plate, and the method comprises the following steps: 1, aluminum nitride substrate surface cleaning; 2, aluminum nitride substrate activation for exposure of a new high-activity surface of the aluminum nitride by use of an alkali lye; 3, preparation of an aluminum nitride substrate surface transition layer which is a composite layer containing copper, manganese, calcium, aluminum and other ions; and 4, thermal oxidation treatment of the aluminum nitride substrate surface to form a composite modified layer. The copper pour use aluminum nitride substrate pretreatment method reduces the harsh conditions of aluminum nitride surface pretreatment in the aluminum nitride DBC process; the prepared aluminum nitride transition layer is a composite oxide layer, can smoothly and fully wet copper oxide on the surface of an oxygen-free copper sheet and spread at high temperature, and reacts to bond, adhesion strength of the aluminum nitride and the copper sheet is high, the hole rate is low, and the product anti temperature cycle performance is good.

Description

technical field [0001] The invention belongs to the technical field of DBC board manufacturing, and relates to power semiconductor modules, semiconductor refrigerators, large-scale integrated circuits, high-power LEDs, and concentrating photovoltaics (CPV), especially a pretreatment method for copper-clad aluminum nitride substrates. . Background technique [0002] The DBC substrate is a metallized substrate that directly sinters copper sheets and ceramic substrates to form a copper / ceramic / copper sandwich structure. Copper and copper oxide are used to produce a Cu~O eutectic phase in a micro-oxygen atmosphere at 1064°C~1083°C. As a bonding agent between the copper sheet and the ceramic substrate, the thickness of the transition layer is micron, which hardly increases the thermal resistance, and at the same time makes the peel strength between the copper sheet and the ceramic substrate reach 60N / cm or more. Currently, oxide-type DBC substrates are widely used, such as Al 2...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/15C04B37/02C04B41/85
Inventor 张振文耿春磊许海仙崔嵩
Owner HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com