A planar crystal interface control structure and application method for gallium antimonide single crystal growth

Abstract

The invention relates to a plane crystal interface control structure for gallium antimonide single crystal growth and a use method thereof. The structure comprises a quartz ampoule bottle, a quartz crucible, a graphite ingot, a graphite stopper and a metal Ga ingot, wherein the quartz crucible is provided with a seed crystal well end opening, a T-shaped cylindrical graphite stopper is used as the graphite stopper, the graphite stopper is arranged at the seed crystal well end opening, the metal Ga ingot is placed at the bottom of the quartz ampoule bottle, the quartz ampoule bottle is inversely buckled on the quartz crucible, and the metal Ga ingot in the quartz ampoule bottle is in contact with the graphite stopper; a seam is reserved between the quartz ampoule bottle and the shoulder part of the quartz crucible; the graphite ingot is horizontally pushed into the quartz ampoule bottle, and the front end of the graphite ingot is combined with the quartz crucible. Through the adoption of the control structure and the use method thereof, the adverse effect of a support structure between the crucible and a crucible support on a thermal field and a solid-liquid interface is avoided, the distribution of the thermal field is optimized, and the generation of the plane crystal interface is controlled. With the reference of a traditional polycrystal material and a single crystal growth technology, the shape of the crystal interface can be improved, and a high-quality gallium antimonide single crystal is obtained.

Description

technical field [0001] The invention relates to single crystal preparation technology, in particular to a planar crystal interface control structure and application method for gallium antimonide single crystal growth. Background technique [0002] The vertical gradient freeze (VGF) method is a common method for growing II-VI and III-V low dislocation compound semiconductor single crystals. During the crystal growth process of the VGF method, the relative positions of the crucible containing the polycrystalline material and the furnace are fixed, and the melting of the polycrystalline material is realized by controlling the temperature field of the furnace, and the temperature fields of multiple heating temperature zones are controlled along the one-dimensional Sequential cooling in the axial direction, directional cooling of the melt, and directional crystallization. A large number of theoretical and experimental results show that the plane crystallization interface is the ...

AI Technical Summary

Problems solved by technology

In the shoulder part of the currently used crystal growth device, it is difficult to achieve an ideal and uniform complete fit between the crucible and the crucible holder (such as figure 1 shown)

When the two come into contact, heat conduction and heat dissipation will produce a local supercooled temperature field, so poor or uneven bonding between the crucible and the crucible holder will have a very adverse effect on the shape of the solid-liquid interface

That is, local overcooling of the sidewall at the shoulder will result in a concave crystallographic interface, increasing the probability of polycrystalline nucleation and generating dislocation propagation

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