Fin-type field effect transistor and formation method thereof

Abstract

Disclosed are a fin-type field effect transistor and a formation method thereof. The formation method of the fin-type field effect transistor includes the following steps: providing a substrate and forming a fin part on the substrate; forming a silicon-carbon layer on the surface of the fin part; carrying out thermal decomposition on the silicon-carbon layer so that the silicon-carbon layer of a part thickness or all thickness is changed into a graphene layer; carrying out hydrotreating on the graphene layer so that a hydrogen-containing energy gap structure is formed on the surface layer of the graphene layer; forming a gate dielectric layer on the graphene layer and forming a first gate electrode which crosses the gate dielectric layer on the gate dielectric layer; removing the gate dielectric layer and the graphene layer at the two ends of the fin part and forming epitaxial layers with doping on the surface of the exposed fin part, wherein the epitaxial layers and the first gate electrode are separated by the remaining gate dielectric layer and the graphene layer and the epitaxial layers with doping at the two ends of the fin part are used respectively as a source electrode and a drain electrode. The hydrogen-containing energy gap structure introduces an energy gap into the graphene layer and the graphene layer with the hydrogen-containing energy gap structure is used as a channel area so that the mobility ratio of carriers in the transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] In the field of semiconductor technology, with the continuous reduction of the feature size of integrated circuits and the requirement for higher signal transmission speed of integrated circuits, transistors need to have higher driving current while gradually reducing their size. To meet this requirement, the length of conventional complementary metal oxide semiconductor (CMOS) transistors has become shorter than before, however, it is still difficult to meet the requirements of high integration. [0003] Therefore, in the prior art, a Fin Field Effect Transistor (FinFET) has been proposed. refer to figure 1 The fin field effect transistor comprises: an insulating layer 11 located on a substrate 10; a fin 12 penetrating through the insulating layer 11 and higher than the upper surfa...

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Problems solved by technology

[0006] The problem solved by the invention is that with the expansion of information data in modern society, faster and more efficient data transmission is required, but the mobility of carriers in current fin field effect transistors cannot meet this requirement

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