Organic electroluminescent device and preparation method thereof
An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of incident light consumption and low light output efficiency of OLED light-emitting devices, and achieve the reduction of polariton waves, The effect of improving light extraction efficiency
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Embodiment 1
[0052] A method for preparing an organic electroluminescent device, comprising the following steps:
[0053] (1) Put the clean glass substrate in a vacuum of 1×10 -5 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by sputtering. The anode material is ITO, the thickness is 70nm, and the sputtering rate is 0.2nm / s;
[0054] The hole transport layer was prepared by thermal resistance evaporation on the anode, the material of the hole transport layer was NPB, the thickness was 20nm, and the evaporation rate was 0.1nm / s;
[0055] On the hole transport layer, the light-emitting layer is prepared by thermal resistance evaporation. The material of the light-emitting layer is a mixed material formed by Ir(ppy)3 doped with TPBi, and the mass ratio of Ir(ppy)3 to TPBi is 10:100. The layer thickness is 15nm, and the evaporation rate of TPBi is 0.1nm / s; the evaporation rate of Ir(ppy)3 is 0.01nm / s;
[0056] On the light-emitting layer, the electron trans...
Embodiment 2
[0064] A method for preparing an organic electroluminescent device, comprising the following steps:
[0065] (1) Put the clean glass substrate in a vacuum of 1×10 -3 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by magnetron sputtering. The anode material is IZO, the thickness is 200nm, and the sputtering rate is 2nm / s;
[0066] The hole transport layer was prepared on the anode by thermal resistance evaporation, the material was 2-TNATA, the thickness was 60nm, and the evaporation rate was 1nm / s;
[0067] On the hole transport layer, the light-emitting layer is prepared by thermal resistance evaporation. The material of the light-emitting layer is a mixed material formed by Ir(MDQ)2(acac) doped with CBP, and the mass ratio of Ir(MDQ)2(acac) to NPB It is 20:100, wherein the evaporation rate of NPB is 1nm / s, and the evaporation rate of Ir(MDQ)2(acac) is 0.2nm / s;
[0068] On the light-emitting layer, the electron transport layer was prepared...
Embodiment 3
[0075] A method for preparing an organic electroluminescent device, comprising the following steps:
[0076] (1) Put the clean glass substrate in a vacuum of 1×10 -4 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by magnetron sputtering. The anode material is AZO, the thickness is 100nm, and the sputtering rate is 1nm / s;
[0077] The hole transport layer was prepared on the anode by thermal resistance evaporation, the material was m-MTDATA, the thickness was 30nm, and the evaporation rate was 0.5nm / s;
[0078] On the hole transport layer, the light-emitting layer was prepared by thermal resistance evaporation. The material of the light-emitting layer was a mixed material formed by doping DCJTB with Alq3. The mass ratio of DCJTB to Alq3 was 2:100, and the evaporation rate of Alq3 was 1nm / s. , DCJTB evaporation rate is 0.02nm / s.
[0079] On the light-emitting layer, the electron transport layer was prepared by thermal resistance evaporation. Th...
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