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Organic electroluminescent device and preparation method thereof

An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of incident light consumption and low light output efficiency of OLED light-emitting devices, and achieve the reduction of polariton waves, The effect of improving light extraction efficiency

Inactive Publication Date: 2015-03-18
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The OLED light-emitting devices in the prior art use reflective electrodes with high reflectivity as cathodes, and the photon frequency of the light emitted by the light-emitting layer is consistent with the plasmon vibration frequency of the metal surface of the reflective electrodes. When resonance occurs, the incident photons will Absorbed by the metal, the high-energy metal surface plasmon waves are excited, and the incident light is consumed. According to literature reports, the light loss caused by the generation of surface plasmon waves on the surface of the reflective electrode can exceed 50%. An important reason for the low light extraction efficiency of state-of-the-art OLED light-emitting devices

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  • Organic electroluminescent device and preparation method thereof

Examples

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Embodiment 1

[0052] A method for preparing an organic electroluminescent device, comprising the following steps:

[0053] (1) Put the clean glass substrate in a vacuum of 1×10 -5 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by sputtering. The anode material is ITO, the thickness is 70nm, and the sputtering rate is 0.2nm / s;

[0054] The hole transport layer was prepared by thermal resistance evaporation on the anode, the material of the hole transport layer was NPB, the thickness was 20nm, and the evaporation rate was 0.1nm / s;

[0055] On the hole transport layer, the light-emitting layer is prepared by thermal resistance evaporation. The material of the light-emitting layer is a mixed material formed by Ir(ppy)3 doped with TPBi, and the mass ratio of Ir(ppy)3 to TPBi is 10:100. The layer thickness is 15nm, and the evaporation rate of TPBi is 0.1nm / s; the evaporation rate of Ir(ppy)3 is 0.01nm / s;

[0056] On the light-emitting layer, the electron trans...

Embodiment 2

[0064] A method for preparing an organic electroluminescent device, comprising the following steps:

[0065] (1) Put the clean glass substrate in a vacuum of 1×10 -3 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by magnetron sputtering. The anode material is IZO, the thickness is 200nm, and the sputtering rate is 2nm / s;

[0066] The hole transport layer was prepared on the anode by thermal resistance evaporation, the material was 2-TNATA, the thickness was 60nm, and the evaporation rate was 1nm / s;

[0067] On the hole transport layer, the light-emitting layer is prepared by thermal resistance evaporation. The material of the light-emitting layer is a mixed material formed by Ir(MDQ)2(acac) doped with CBP, and the mass ratio of Ir(MDQ)2(acac) to NPB It is 20:100, wherein the evaporation rate of NPB is 1nm / s, and the evaporation rate of Ir(MDQ)2(acac) is 0.2nm / s;

[0068] On the light-emitting layer, the electron transport layer was prepared...

Embodiment 3

[0075] A method for preparing an organic electroluminescent device, comprising the following steps:

[0076] (1) Put the clean glass substrate in a vacuum of 1×10 -4 In the vacuum coating chamber of Pa, the anode is prepared on the glass substrate by magnetron sputtering. The anode material is AZO, the thickness is 100nm, and the sputtering rate is 1nm / s;

[0077] The hole transport layer was prepared on the anode by thermal resistance evaporation, the material was m-MTDATA, the thickness was 30nm, and the evaporation rate was 0.5nm / s;

[0078] On the hole transport layer, the light-emitting layer was prepared by thermal resistance evaporation. The material of the light-emitting layer was a mixed material formed by doping DCJTB with Alq3. The mass ratio of DCJTB to Alq3 was 2:100, and the evaporation rate of Alq3 was 1nm / s. , DCJTB evaporation rate is 0.02nm / s.

[0079] On the light-emitting layer, the electron transport layer was prepared by thermal resistance evaporation. Th...

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Abstract

The invention discloses an organic electroluminescent device, including a glass substrate, an anode, a hole transport layer, a luminescent layer, an electron transport layer, a transparent cathode, a crystalline material layer and a reflecting electrode which are stacked in sequence, the material of the crystalline material layer is a hybrid material formed by an active crystal material and an induced crystallization material, and the crystalline material layer can change a resonant state of light on the surface of the reflecting electrode, thereby greatly reducing surface plasmon polariton waves, and improving the light extraction efficiency. The invention also discloses a preparation method of the organic electroluminescent device.

Description

technical field [0001] The invention relates to the field of organic electroluminescence, in particular to an organic electroluminescence device and a preparation method thereof. Background technique [0002] Organic Light Emission Diode (hereinafter referred to as OLED) has the characteristics of high brightness, wide range of material selection, low driving voltage, fully cured active luminescence, etc., and has the advantages of high definition, wide viewing angle, and fast response speed. It is a display technology and light source with great potential, which conforms to the development trend of mobile communication and information display in the information age, as well as the requirements of green lighting technology, and is the focus of many researchers at home and abroad. [0003] The OLED light-emitting devices in the prior art use reflective electrodes with high reflectivity as cathodes, and the photon frequency of the light emitted by the light-emitting layer is c...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/56
CPCH10K50/00H10K50/854H10K71/00
Inventor 周明杰冯小明张娟娟王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD