A large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping

A technology of laser diodes and laser amplifiers, which is applied to lasers, laser components, semiconductor lasers, etc., can solve problems such as the decrease in the gain of the amplified laser, the impact on the quality of the amplified laser beam, and the uneven gain of the pumping region, so as to facilitate troubleshooting problems, improved coupling efficiency, and better beam quality

Active Publication Date: 2015-03-18
ACAD OF OPTO ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under the condition that the caliber of the working substance 30' remains unchanged, increasing the height H' of the coupling light guide tube 20' will reduce the coupling efficiency of the pump light at the exit of the coupling light guide tube 20' and deteriorate the beam quality, thereby Reduce the gain multiple of the amplified laser and reduce the beam quality of the amplified laser
[0006] (2) If the number of semiconductor laser diode stacks 10' is large, when a fault occurs somewhere in the semiconductor laser diode stack 10', maintenance will be very troublesome, and it is necessary to remove the entire semiconductor laser diode stack 10' to troubleshoot the problem
[0007] 2. After the pumping beam passes through the coupling light pipe 20', it reaches the working substance 30'. The closer to the exit of the coupling light pipe 20' in the working substance 30', the better the beam quality. , the longer the transmission distance, the worse the beam quality of the pump light will be, resulting in uneven gain in the pump region, which directly affects the beam quality of the amplified laser

Method used

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  • A large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping
  • A large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping
  • A large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping

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Experimental program
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Effect test

Embodiment 1

[0057] Such as figure 2 , image 3 As shown, the large-aperture laser amplifier based on the multi-dimensional laser diode stack side pumping provided by Embodiment 1 of the present invention includes a plurality of pump light source combinations 10 , a working substance 20 and a cooling device 30 . Wherein, each pump light source combination 10 includes a semiconductor laser diode stack 11, a beam shaping unit 13 (11 and 13 are set as one in the figure, of course, 11 and 13 can also be set separately) and a coupling light pipe 12, close to The light outlet of the semiconductor laser diode stack 11 is provided with a beam shaping unit 13 and a coupling light pipe 12 in sequence, wherein the semiconductor laser diode stack 11 is a large-area semiconductor laser diode stack. The shape of the working substance 20 is a regular prism, the upper and lower bases of the regular prism are regular polygons, the upper and lower bases are parallel, and the side length of the regular pol...

example

[0087] l 1 =30mm, the refractive index of air n 1 =1, the working substance is neodymium glass, its refractive index n 2 = 1.53, m = 10 mm.

[0088] The pump light must be totally reflected in the working substance 20, and must satisfy Then there is θ c =40.81°.

[0089] when θ 3 Total reflection will occur at >40.81°.

[0090] The light incident from the left side of the normal, the incident light can be totally reflected, there must be θ 5 ≤40.81°.

[0091] If θ 5 = 30°, θ 2 >10.81°, then θ 1 >16.68°, that is, light with an incident angle greater than 16.68° is totally reflected, and 73.32° of light can be totally reflected.

[0092] If θ 5 =40.81°, θ 2 >0°, then θ 1 >0°, that is, the light with an incident angle greater than 0° will be totally reflected, and the light within 90° will be totally reflected. Since there are two boundary conditions: incident from the left side of the normal, and one side (AB) of the working substance 20, the incident angle of th...

Embodiment 2

[0097] Such as Figure 9 As shown, the difference between embodiment 2 and embodiment 1 is: in embodiment 2, the lower bottom surface of the prism of the working substance 20 is at the upper end, and the upper bottom of the prism is at the lower end, and the laser that needs to be energy amplified passes through the lower end of the prism. The incidence from the bottom surface is opposite to that of the working substance 20 in Embodiment 1. Wherein, the diameter of the working substance 20 is relatively large, and the side length L of the regular polygon under the bottom surface of the regular prism is greater than or equal to 10 mm. The lower bottom surface of the positive prism of the working substance 20 is coated with a high-transmittance film consistent with the wavelength of the laser that needs to be amplified in energy, and is used to transmit the laser that needs to be amplified in energy; The reflective film with the same wavelength of the amplified laser is used to...

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Abstract

The invention relates to the technical field of laser amplifiers, and provides a large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping. The large-diameter laser amplifier based on the multi-dimensional laser diode stack side pumping comprises a plurality of pump light source combinations. Each pump light source combination comprises a semiconductor laser diode stack, a light beam shaping unit and a coupling light pipe. The shape of a working substance is a trustum of a pyramid. The upper bottom surface and the lower bottom surface are both polygons. The quantity of the sides of each polygon is equal to the quantity of pump light source combinations. The large-diameter laser amplifier based on the multi-dimensional laser diode stack side pump also comprises a cooling device. Each side surface of the working substance is correspondingly provided with one pump light source combination. Pump light emitted by the semiconductor laser diode stack is subjected to shaping by the light beam shaping unit, and is then subjected to coupling realized by the light pipe. The pump light is incident from the side surface of the working substance to perform side pumping, and amplification is carried out on a laser incident from the upper bottom surface, which is the trustum of the pyramid, of the working substance. The invention is applicable to large-scale laser devices using large-diameter laser working substances. The large-diameter laser amplifier based on the multi-dimensional laser diode stack side pump is convenient to debug, convenient for troubleshooting, convenient for maintain and enables a higher energy gain.

Description

【Technical field】 [0001] The invention relates to the technical field of laser amplification devices, in particular to a large-aperture laser amplifier based on multi-dimensional laser diode stack side pumping. 【Background technique】 [0002] In the prior art, a single bar of a semiconductor laser diode is limited by the highest power and packaging structure, and the total light-emitting area of ​​the stack often greatly exceeds the cross-sectional area of ​​the working material. As a good coupling device, the light pipe can compress the light beam from a large area to a small working substance, and has the advantages of high efficiency, uniform light, and simplicity. [0003] Such as figure 1 As shown, the existing laser amplification devices based on the large-area semiconductor laser diode stack 10' being shaped by the beam shaping unit 40' and coupled with the coupling light guide 20' all adopt the end-pumping method, which has the following defects : [0004] 1. For ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/0941
CPCH01S3/0405H01S3/0604H01S3/0606H01S3/0615H01S3/094057H01S3/094084H01S3/0941H01S3/042H01S5/4025H01S5/0225
Inventor 樊仲维邱基斯唐熊忻赵天卓
Owner ACAD OF OPTO ELECTRONICS CHINESE ACAD OF SCI
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