Structured arrangement manometer coarsened sapphire substrate and preparation method
A sapphire substrate, nanotechnology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light extraction efficiency of GaN-based LEDs, achieve enhanced light extraction efficiency and light output power, high light extraction efficiency, and improve light The effect of the probability of escape
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[0040] Example 1
[0041] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern, use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a round table, the height of the round table is 1.5 μm, and the bottom diameter is 2 μm.
[0042] (2) Cleaning the substrate, and then depositing a silicon dioxide film with a thickness of 200 nm on the micron-scale pattern 1.
[0043] (3) Cleaning the substrate, and then depositing a silver film with a thickness of 100 nm on the silicon dioxide film, and annealing in air at a temperature of 250 degrees and a time of 1000 seconds to make the silver film agglomerate into nanoparticles.
[0044] (4) The nano-particle pattern is transferred to the silicon dioxide film by the ICP dry etching pattern transfer method, and the etching ga...
Example Embodiment
[0048] Example 2
[0049] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a quadrangular pyramid, the height of the pattern is 10 μm, the diameter of the bottom surface (ie the longest diagonal of the bottom surface) is 10 μm, and the shortest diagonal of the bottom surface is 6 μm.
[0050] (2) Clean the substrate, and then deposit a silicon dioxide film with a thickness of 1000 nm on the micron-scale pattern 1.
[0051] (3) Depositing another silver film with a thickness of 200 nm on the silicon dioxide film of step (2); annealing in oxygen at a temperature of 900 degrees and a time of 5000 s to make the silver film agglomerate into nanoparticles.
[0052] (4) Transfer the nano-particle pattern to the...
Example Embodiment
[0056] Example 3
[0057] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a pentagonal pyramid, the height of the pattern is 10 μm, and the bottom diameter is 25 μm (the bottom diameter of the pyramid, that is, its longest diagonal).
[0058] (2) Depositing a silicon dioxide film with a thickness of 500 nm on the micron-scale pattern formed in step (1);
[0059] (3) A layer of silver film with a thickness of 300 nm is deposited on the silicon dioxide film of step (2); annealing is carried out in the air at a temperature of 2000 degrees and a time of 200 s to make the silver film agglomerate into nanoparticles. Experiments show that the height of the pattern of the silver nanoparticles prepared under t...
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