Structured arrangement manometer coarsened sapphire substrate and preparation method

A sapphire substrate, nanotechnology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light extraction efficiency of GaN-based LEDs, achieve enhanced light extraction efficiency and light output power, high light extraction efficiency, and improve light The effect of the probability of escape

Inactive Publication Date: 2015-03-25
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The present invention aims at the problem that the light extraction efficiency of GaN-based LEDs (light-emitting diodes) prepared by the existing patterned sapphire substrates is low, and provides a regular arrange

Method used

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  • Structured arrangement manometer coarsened sapphire substrate and preparation method
  • Structured arrangement manometer coarsened sapphire substrate and preparation method
  • Structured arrangement manometer coarsened sapphire substrate and preparation method

Examples

Experimental program
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Example Embodiment

[0040] Example 1

[0041] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern, use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a round table, the height of the round table is 1.5 μm, and the bottom diameter is 2 μm.

[0042] (2) Cleaning the substrate, and then depositing a silicon dioxide film with a thickness of 200 nm on the micron-scale pattern 1.

[0043] (3) Cleaning the substrate, and then depositing a silver film with a thickness of 100 nm on the silicon dioxide film, and annealing in air at a temperature of 250 degrees and a time of 1000 seconds to make the silver film agglomerate into nanoparticles.

[0044] (4) The nano-particle pattern is transferred to the silicon dioxide film by the ICP dry etching pattern transfer method, and the etching ga...

Example Embodiment

[0048] Example 2

[0049] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a quadrangular pyramid, the height of the pattern is 10 μm, the diameter of the bottom surface (ie the longest diagonal of the bottom surface) is 10 μm, and the shortest diagonal of the bottom surface is 6 μm.

[0050] (2) Clean the substrate, and then deposit a silicon dioxide film with a thickness of 1000 nm on the micron-scale pattern 1.

[0051] (3) Depositing another silver film with a thickness of 200 nm on the silicon dioxide film of step (2); annealing in oxygen at a temperature of 900 degrees and a time of 5000 s to make the silver film agglomerate into nanoparticles.

[0052] (4) Transfer the nano-particle pattern to the...

Example Embodiment

[0056] Example 3

[0057] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet corrosion of sapphire. A micron-level pattern 1 is prepared; the micron-level pattern is a pentagonal pyramid, the height of the pattern is 10 μm, and the bottom diameter is 25 μm (the bottom diameter of the pyramid, that is, its longest diagonal).

[0058] (2) Depositing a silicon dioxide film with a thickness of 500 nm on the micron-scale pattern formed in step (1);

[0059] (3) A layer of silver film with a thickness of 300 nm is deposited on the silicon dioxide film of step (2); annealing is carried out in the air at a temperature of 2000 degrees and a time of 200 s to make the silver film agglomerate into nanoparticles. Experiments show that the height of the pattern of the silver nanoparticles prepared under t...

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Abstract

The invention relates to a structured arrangement manometer coarsened sapphire substrate and a preparation method. The sapphire substrate is provided with composite patterns formed by combining micron order patterns and nanometer order patterns, the nanometer order patterns are distributed on the micron order patterns, and the nanometer order patterns are distributed on the radiuses or the connecting lines of the gravity centers and the corners of the upper surfaces of the micron order patterns. The central points of the lower surfaces of the nanometer order patterns coincide with the central points of the radiuses or the centers of the connecting lines of the gravity centers and the corners of the upper surfaces of the micron order patterns. The nanometer order patterns on each micron order pattern are distributed symmetrically. The method comprises the steps that firstly, the micron order patterns are prepared on the sapphire substrate, and then the nanometer order patterns are prepared on the micron order patterns. By means of the structured arrangement manometer coarsened sapphire substrate and the preparation method, the propagation direction of light can be effectively changed, the probability of light overflow is increased, a light path can be effectively emitted out, the reflection of the patterns to light is enhanced, so that the propagation direction of the light is changed, and the light extraction efficiency and the light output power of a GaN-based LED with the sapphire substrate are improved.

Description

technical field [0001] The invention relates to a sapphire substrate with nano-roughened composite pattern for epitaxial growth of GaN crystal and a preparation method thereof, belonging to the technical field of semiconductor crystal preparation. Background technique [0002] GaN has the characteristics of wide direct bandgap, high electron saturation velocity, high breakdown electric field and high thermal conductivity, and has great application potential in the fields of optoelectronics and microelectronics. GaN and other Group III nitrides (InN, AlN) can form a ternary or quaternary solid solution, its forbidden band width is from 0.7eV to 6.28eV, and its emission wavelength is adjustable from infrared to ultraviolet. Get widely used. [0003] Due to the lack of large-scale GaN substrates, GaN thin films are generally grown by heteroepitaxy on substrates such as sapphire, silicon carbide, and silicon. Sapphire is currently the most commonly used substrate for commercia...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/22H01L33/007
Inventor 逯瑶曲爽王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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