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Solar cell element, production method for solar cell element, and solar cell module

A technology for solar cells and components, applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as unrealization, degradation of solar cell characteristics, insufficient aluminum content, etc., to achieve the effect of a simple manufacturing method

Inactive Publication Date: 2015-03-25
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the amount of aluminum paste applied is reduced, the amount of aluminum diffused from the surface of the p-type silicon semiconductor substrate to the inside becomes insufficient.
Result: the desired BSF (Back Surface Field, back field) effect cannot be achieved (because p + The effect of improving the collection efficiency of the generated carriers due to the existence of the type diffusion layer), so there is a problem that the characteristics of the solar cell are degraded

Method used

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  • Solar cell element, production method for solar cell element, and solar cell module
  • Solar cell element, production method for solar cell element, and solar cell module
  • Solar cell element, production method for solar cell element, and solar cell module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0214] (Preparation of composition for passivation layer formation)

[0215] Will Al 2 o 3 Thin film coating material ("SYM-A104", Al 2 o 3 : 2% by mass, xylene: 87% by mass, 2-propanol: 5% by mass, stabilizer: 6% by mass) 1.0 g and Nb 2 o 5 Thin film coating materials (Nb-05, Nb 2 o 5 : 5% by mass, n-butyl acetate: 56% by mass, stabilizer: 16.5% by mass, viscosity modifier: 22.5% by mass) 1.0 g was mixed, and the composition 1 for passivation layer formation was prepared.

[0216] (formation of passivation layer)

[0217] A single-crystal p-type silicon substrate (SUMCO Corporation, 50 mm square, thickness: 625 μm) with a mirror surface shape was used as a semiconductor substrate. The silicon substrate was pretreated by immersion washing at 70° C. for 5 minutes using an RCA cleaning solution (Kanto Chemical Co., Ltd., Frontier Cleaner-A01).

[0218] Then, using a spin coater (Mikasa Corporation, MS-100), at 4000rpm (min -1 ), the composition 1 for passivation layer ...

Embodiment 2

[0237] (Preparation of composition for passivation layer formation)

[0238] use it 2 o 5 Thin-film coating materials (Kaijin Chemical Laboratory Co., Ltd., "Ta-10-P", Ta 2 o 5 : 10% by mass, n-octane: 9% by mass, n-butyl acetate: 60% by mass, stabilizer: 21% by mass) as the composition 2 for passivation layer formation.

[0239] Except having used the composition 2 for passivation layer formation obtained above, the board|substrate for evaluation was produced similarly to Example 1, and it evaluated similarly to Example 1. The effective lifetime is 450μs. The passivation layer has a thickness of 75nm and a density of 3.6g / cm 3 .

[0240] Except having used the composition 2 for passivation layer formation instead of the composition 1 for passivation layer formation, the solar cell element was produced similarly to Example 1, and the electric power generation characteristic was evaluated.

Embodiment 3

[0242] Use HfO 2 Thin-film coating material (Hf-05, HfO 2 Content: 5 mass %, isoamyl acetate: 73 mass %, n-octane: 10 mass %, isopropanol: 5 mass %, stabilizer: 7 mass %) was made into the composition 3 for passivation layer formation.

[0243] Except having used the composition 3 for passivation layer formation obtained above, the board|substrate for evaluation was produced similarly to Example 1, and it evaluated similarly to Example 1. The effective lifetime is 380μs. The passivation layer has a thickness of 71nm and a density of 3.2g / cm 3 .

[0244] Except having used the composition 3 for passivation layer formation instead of the composition 1 for passivation layer formation, the solar cell element was produced similarly to Example 1, and the electric power generation characteristic was evaluated.

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Abstract

This solar cell element is provided with: a semiconductor substrate having a light-receiving surface, a rear surface located on the opposite side to the light-receiving surface, and a side surface; a light-receiving-surface electrode provided on the light-receiving surface; a rear surface electrode provided on the rear surface; and a passivation layer which is provided on at least one from among the light-receiving surface, the rear surface, and the side surface, and which includes at least one compound selected from the group consisting of Nb2O5, Ta2O5, V2O5, Y2O3, and HfO2.

Description

technical field [0001] The present invention relates to a solar cell element, a method for manufacturing the solar cell element, and a solar cell module. Background technique [0002] The manufacturing process of the conventional silicon solar cell element is demonstrated. [0003] First, a p-type silicon substrate with a textured structure formed on the light-receiving surface side is prepared in order to promote the light trapping effect and achieve high efficiency. Next, phosphorous oxychloride (POCl 3 ), nitrogen and oxygen mixed gas atmosphere at 800°C to 900°C for tens of minutes to form an n-type diffusion layer uniformly. In this conventional method, since phosphorus is diffused using a mixed gas, an n-type diffused layer is formed not only on the light-receiving surface, that is, the surface, but also on the side surface and the rear surface. Therefore, side etching is required to remove the n-type diffusion layer formed on the side surface. In addition, the n-ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/0224H01L31/18
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 织田明博吉田诚人野尻刚仓田靖田中彻足立修一郎早坂刚服部孝司松村三江子渡边敬司森下真年滨村浩孝
Owner HITACHI CHEM CO LTD