Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure

Abstract

The invention discloses an indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure. The structure comprises a substrate, a nucleating layer, a buffer layer, an indium nitride channel layer, an aluminum nitride channel layer, an aluminum nitride insertion layer, a barrier layer and a gallium nitride cap layer, wherein the nucleating layer is manufactured on the substrate; the thickness of the nucleating layer is 0.01-0.60 mum; the buffer layer is manufactured on the nucleating layer; the indium nitride channel layer is manufactured on the buffer layer and has the thickness of 0.6-5 nm; the aluminum nitride insertion layer is manufactured on the indium nitride channel layer and has the thickness of 0.7-5 nm; the barrier layer is manufactured on the aluminum nitride insertion layer; the gallium nitride cap layer is manufactured on the barrier layer and has the thickness of 1-5 nm. By introducing the indium nitride channel layer, a back barrier for limiting channel electrons is formed, so the two-dimensional electron gas limiting capacity is improved, the grid control capacity is improved, the electric leakage of the buffer layer is reduced, and a short channel effect of the device is inhibited.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to an indium nitride channel layer gallium nitride-based heterojunction high electron mobility transistor structure. The transistor uses indium nitride as the channel layer and aluminum gallium nitride as the high electron mobility transistor structure. The resistance layer can significantly improve the ability to confine the two-dimensional electron gas, curb the leakage of the buffer layer, and improve the reliability of the device. Background technique [0002] As a typical representative of the third-generation semiconductor materials, gallium nitride has the characteristics of large band gap, high electron saturation drift speed, high breakdown voltage, stable chemical properties and strong radiation resistance. It is especially suitable for the preparation of high-temperature, high-frequency, Transistors with high power and radiation resistance have broad applic...

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Problems solved by technology

However, the scattering effect of the ternary alloy in the AlGaN buffer layer or the InGaN buffer layer will reduce the heat dissipation performance of the device

Doping reduces the integrity

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