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Preparation method for inverted pyramid structure on silicon wafer surface

A silicon chip surface and inverted pyramid technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve low cost, easy promotion and application, and reduce production costs

Inactive Publication Date: 2015-04-22
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there is no precedent for the application of cesium chloride nano-island self-assembly technology combined with traditional wet etching technology to prepare inverted pyramid morphology on the silicon surface. Pyramid Structure Method

Method used

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  • Preparation method for inverted pyramid structure on silicon wafer surface
  • Preparation method for inverted pyramid structure on silicon wafer surface
  • Preparation method for inverted pyramid structure on silicon wafer surface

Examples

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preparation example Construction

[0031] based on figure 1 The preparation method of the silicon wafer surface inverted pyramid structure shown, Figure 2-Figure 7 Shown is the process flow chart of preparing the inverted pyramid structure on the surface of silicon wafer according to the embodiment of the present invention. The preparation of face inverted pyramid specifically comprises the following steps:

[0032] Such as figure 2 As shown, the silicon wafer is cleaned and placed in a vacuum coating chamber to evaporate a cesium chloride film with a film thickness of 200-7000 angstroms; the silicon wafer is a silicon wafer used in the semiconductor industry with a thickness of 0.2mm-0.5mm, P-type , the resistivity is 1Ω·cm-10Ω·cm, and the surface is polished.

[0033] Such as image 3 As shown, after the cesium chloride thin film is plated, the gas with a certain humidity is introduced into the vacuum coating cavity, and the relative humidity is 10%-70%. Nano-cesium chloride peninsula structures simila...

Embodiment

[0040] The following is a process flow chart for preparing an inverted pyramid structure on the surface of a silicon wafer according to an embodiment of the present invention. The method includes the following steps:

[0041] Step 1: Evaporate a cesium chloride film on a silicon wafer by thermal evaporation, the film thickness is 300 nanometers, and the thickness is measured and controlled by a quartz crystal thickness gauge.

[0042] Step 2: Put the silicon wafer coated with a cesium chloride film into a ventilated chamber with a humidity of 50%, the humidity is controlled by the flow of humid gas flowing into the chamber, develop for 1 hour under this humidity condition, and make the cesium chloride The thin film is aggregated into a nano-island structure, and a cesium chloride nano-island structure is formed on the surface of the silicon wafer; the average diameter of the cesium chloride nano-island is 600 nanometers.

[0043] Step 3: Put the silicon wafer with the cesium c...

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Abstract

The invention discloses a preparation method for an inverted pyramid structure on a silicon wafer surface. The method comprises the following steps that a cesium chloride island structure is prepared on the silicon wafer surface; a layer of titanium metal film is evaporated on the silicon wafer surface with the cesium chloride nanometer island structure, a silicon wafer is put into deionized water and ultrasonic exfoliation is carried out on the silicon wafer , the cesium chloride island structure and the titanium metal film on the cesium chloride island structure are removed, and porous titanium film is formed on the silicon wafer surface; anisotropic etching is carried out on the silicon wafer surface by the porous titanium film used as covering film; the porous titanium film on the silicon wafer surface is removed, and the inverted pyramid structure is formed on the silicon wafer surface. The preparation method for the inverted pyramid structure on the silicon wafer surface is accomplished by utilizing the technologies of vacuum cesium chloride film coating, cesium chloride self-assembly, vacuum thermal evaporation metal film coating, exfoliation and wet anisotropic etching, the preparation technology is simplified, the preparation cost is lowered, and the defects that the application is limited on aspects such as large-scale industrialization and nanometer level small scale pyramid array preparation are overcome. The preparation method for the inverted pyramid structure on the silicon wafer surface has low cost and stronger process adaptation performance, and is convenient to promote and apply.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic and semiconductor device manufacturing, and in particular relates to a method for preparing an inverted pyramid structure on the surface of a silicon wafer. Background technique [0002] Silicon is one of the most versatile semiconductor materials with huge industrial applications in solar cells, sensors and many other fields. At present, in monocrystalline silicon cells, passivated emitter back local diffusion (PERL) cells that maintain the highest efficiency (25%) use regular inverted pyramid arrays prepared by photolithography technology as the surface anti-reflection structure of the cell. , the short-circuit current density (Jsc) of the battery reached 42.7mA / cm 2 . [0003] However, the current common method of using photolithography to prepare inverted pyramid arrays is not only complicated in process and relatively high in cost, but also difficult to prepare nanoscale photolithograp...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L31/1804H01L31/0236
Inventor 刘静伊福廷张天冲王波张新帅孙钢杰
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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