Preparation method of bismuth titanate (BT) ferroelectric film

A ferroelectric thin film, bismuth titanate technology, used in chemical instruments and methods, titanium compounds, iron compounds, etc., to achieve strong activity and oxidation, ensure ferroelectric properties, and promote decomposition.

Inactive Publication Date: 2015-04-29
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the deficiencies in the above-mentioned background technology, the present invention provides a preparation method of bismuth titanate ferroelectric film, which is modified by solution and ultraviolet radiation The combined method reduces the sintering temperature of the film to below 500°C, which solves the defects of the existing bismuth titanate ferroelectric film, such as high sintering temperature and easy volatilization of Bi elements, and achieves the goal of being compatible with Si integrated circuits

Method used

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  • Preparation method of bismuth titanate (BT) ferroelectric film
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  • Preparation method of bismuth titanate (BT) ferroelectric film

Examples

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Embodiment 1

[0038] Mix solution A and solution B according to the molar ratio Bi:Ti=4:3 to obtain a mixed solution;

[0039] By adjusting the amount of methanol, the total concentration of Bi and Ti ions in the mixed solution is controlled at 0.3mol / l.

[0040] After the obtained mixed solution was left to stand for 24 to 48 hours, ammonia water and nitric acid were added according to the molar ratio of Ti: ammonia water: nitric acid = 1:3:3, and the BT precursor solution was obtained;

[0041] 2) Preparation of BT gel film

[0042] Using the BT precursor solution obtained in step 1), a BT gel film was prepared on a Si substrate coated with a Pt conductive layer by pulling or spin coating;

[0043] 3) Pretreatment of BT gel membrane

[0044] Place the BT gel film obtained in step 2) on a heating plate at 300°C, and irradiate the BT gel film with an ultraviolet lamp with a wavelength of 184-254nm for 50 minutes to obtain a BT precursor film;

[0045] 4) Final treatment of BT precursor f...

Embodiment 2

[0053] Mix solution A and solution B according to 4:3, and mix according to the molar ratio Bi:Ti=4:3 to obtain a mixed solution;

[0054] By adjusting the amount of methanol, the total concentration of Bi and Ti ions in the mixed solution is controlled at 0.4mol / l.

[0055] After the obtained mixed solution was left to stand for 24 to 48 hours, ammonia water and nitric acid were added according to the molar ratio of Ti: ammonia water: nitric acid = 1:3:3, and the BT precursor solution was obtained;

[0056] 2) Preparation of BT gel film

[0057] Using the BT precursor solution obtained in step 1), the LaNiO 3 On the Si substrate of the conductive layer, a BT gel film is prepared by pulling or spin coating;

[0058] 3) Pretreatment of BT gel film

[0059] Place the BT gel film obtained in step 2) on a heating plate at 300°C, and irradiate the BT gel film with an ultraviolet lamp with a wavelength of 184-254nm for 40 minutes to obtain a BT precursor film;

[0060] 4) Final ...

Embodiment 3

[0068] Mix solution A and solution B according to the molar ratio Bi:Ti=4:3 to obtain a mixed solution;

[0069] By adjusting the amount of methanol, the total concentration of Bi and Ti ions in the solution is controlled at 0.5 mol / l.

[0070] After the obtained mixed solution was left to stand for 24 to 48 hours, ammonia water and nitric acid were added according to the molar ratio of Ti: ammonia water: nitric acid = 1:3:3, and the BT precursor solution was obtained;

[0071] 2) Preparation of BT gel film

[0072] Using the BT precursor solution obtained in step 1), a BT gel film was prepared on a Si substrate coated with a Pt conductive layer by pulling or spin coating;

[0073] 3) Pretreatment of BT gel membrane

[0074] Place the BT gel film obtained in step 2) on a heating plate at 250°C, and irradiate the BT gel film with an ultraviolet lamp with a wavelength of 184-254nm for 40 minutes to obtain a BT precursor film;

[0075] 4) Final treatment of BT precursor film ...

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Abstract

The invention relates to the field of the preparative technology of ferroelectric films and devices and in particular relates to a preparation method of a bismuth titanate (BT) ferroelectric film. Solution modification and ultraviolet radiation are combined to reduce the sintering temperature of the film to be below 500 DEG C, the defects that the existing bismuth titanate ferroelectric film has high sintering temperature and the Bi element can be volatized easily are overcome and the purpose of compatibility with a Si integration circuit is achieved. The preparation method comprises the following steps: (1) preparing precursor solution; (2) preparing a BT gel film; (3) carrying out pretreatment on the BT gel film; and (4) performing ultimate treatment on a BT precursor film.

Description

1. Technical field [0001] The invention relates to the technical field of ferroelectric thin film and device preparation, in particular to a method for preparing a bismuth titanate ferroelectric thin film. 2. Background technology [0002] Due to the special dielectric, electro-optic, acousto-optic, photorefractive, nonlinear optics, pyroelectric and piezoelectric properties of ferroelectrics, it is a material with great commercial application prospects, so the application of ferroelectrics has been very early. It has attracted the attention of the physics and materials science circles. In the 1950s, there was a climax of research on the application of ferroelectrics. Since the 1970s, due to the in-depth understanding of ferroelectrics, the expansion of the types of artificial ferroelectric materials, the progress of microelectronics integration technology, especially with a series of breakthroughs in the preparation of ferroelectric thin films, we have successfully prepa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00C01G23/00
Inventor 孙喁喁郭巧琴陈源清
Owner XIAN TECH UNIV
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