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Extreme ultraviolet light source system for xe dielectric capillary discharge detection

A technology of extreme ultraviolet light source and capillary tube, which is applied in the direction of discharge tube, X-ray tube, X-ray tube with huge current, etc. It can solve the problems of unsuitable detection light source, high-power EUV light source, bulky size and high price, and achieve small size , high vacuum, low price effect

Active Publication Date: 2017-03-01
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that conventional high-power EUV light sources are bulky and expensive, and are not suitable for use as detection light sources for various components of EUV lithography machines, and provide an extreme ultraviolet light source system for Xe dielectric capillary discharge detection

Method used

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  • Extreme ultraviolet light source system for xe dielectric capillary discharge detection
  • Extreme ultraviolet light source system for xe dielectric capillary discharge detection
  • Extreme ultraviolet light source system for xe dielectric capillary discharge detection

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specific Embodiment approach 1

[0020] Specific implementation mode one: combine figure 1 with figure 2 To illustrate this embodiment, the extreme ultraviolet light source system for Xe dielectric capillary discharge detection described in this embodiment includes a power supply system, a discharge chamber 1, a vacuum chamber 2 and an optical collection system 3;

[0021] The power supply system includes a trigger control unit, a main pulse power supply and a pre-pulse power supply, and the two trigger signal output terminals of the trigger control unit are respectively connected to the trigger signal input terminals of the main pulse power supply and the trigger signal input terminals of the pre-pulse power supply; The pulse power supply includes a primary charging circuit, an intermediate energy storage pulse forming circuit and a pulse compression circuit. The three-phase AC power supply is connected to the primary charging circuit through a transformer. The primary charging circuit adopts an AC voltage ...

specific Embodiment approach 2

[0029] Specific implementation mode two: combination figure 2 with image 3 Describe this embodiment. This embodiment is a further limitation of the extreme ultraviolet light source system for Xe dielectric capillary discharge detection described in Embodiment 1. In this embodiment, the pulse compression circuit of the main pulse power supply of the power system uses three The pulse is compressed by the stage pulse compression method.

[0030] Such as figure 2 As shown, the pulse compression circuit adopts a three-stage pulse compression circuit structure, and each stage pulse compression circuit includes a capacitor and an inductor, as shown in the dotted line box on the far right of the figure. Considering that the pulse forming and compression circuit will generate a lot of heat, and in order to ensure the insulation performance in the process of device miniaturization, the pulse forming of the main pulse power supply and the first two stages of compression circuits are...

specific Embodiment approach 3

[0031] Specific implementation mode three: combination Figure 4 This embodiment is described. This embodiment is a further limitation of the extreme ultraviolet light source system for Xe dielectric capillary discharge detection described in Embodiment 1. In this embodiment, one end of the common electrode 1-3 is located inside the shell 1-4, and the other One end passes through the end face of the shell 1-4, extends to the outside of the shell 1-4, and the extended end face is closed;

[0032] One end of the pre-pulse high-voltage electrode 1-2 is located inside the common electrode 1-3, and the other end passes through the end face of the common electrode 1-3 and extends to the outside of the common electrode 1-3, and the extended end face is closed; the pre-pulse high voltage There is a gap between the outer wall of the electrode 1-2 and the inner wall of the common electrode 1-3;

[0033] The side wall of the common electrode 1-3 is provided with a No. 1 water inlet 1-7 ...

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Abstract

The invention discloses an extreme ultraviolet source system for discharge detection of Xe medium capillaries and relates to an extreme ultraviolet source with the length of 13.5nm. The system can solve the problem that a conventional high-power EUV (extreme ultraviolet) light source is improperly served as detection light sources of various parts of an EUV photoetching machine due to large volume and expensive cost. The system is characterized in that a magnetic pulse compression network is used for compressing and steepening pulses by a main pulsed power supply, one electrode is simultaneously served as the high-voltage electrode of the main pulsed power supply and the grounded electrode of a pre-pulsed power supply, the pre-pulsed high-voltage electrode and the common electrode are refrigerated by a water cooling system, an embedded Wolter I-type collecting system is served as an optical collecting system and comprises 10 layers of collecting mirrors, and each layer of collecting mirrors comprises one revolution ellipsoid surface and one revolution hyperboloid both which include one common geometrical focus. The system is small in volume, high in vacuum degree and low in cost, thus the extreme ultraviolet sources are applied to detection light sources of various parts of the EUV photoetching machine.

Description

technical field [0001] The invention relates to a 13.5nm extreme ultraviolet light source. Background technique [0002] In order to realize the leap-forward development of VLSI in my country, the country regards the realization of 45nm-22nm reticle in 2020 as the medium and long-term development plan of my country's microelectronics industry, and thus formulated the National Science and Technology Major Project 02. In the past few decades, the microelectronics industry has developed rapidly. The minimum feature size of integrated circuits determines the number of transistors that can be integrated on a chip, and also determines the operating speed and storage capacity of integrated circuits. As the technical basis of integrated circuits, lithography technology is an important factor that determines the development speed of integrated circuits. The physical limit R of the resolution of the lithography machine determines the minimum feature size of the integrated circuit, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05G2/00G03F7/20
Inventor 王骐徐强赵永蓬
Owner HARBIN INST OF TECH
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