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A method of atomic layer deposition of al/ti thin films using titanium amino as titanium source

A technology of atomic layer deposition and amino titanium, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve problems such as water absorption and affecting film performance

Active Publication Date: 2017-06-16
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (3) The obtained film may absorb water due to the incomplete removal of by-products, which will affect the performance of the film

Method used

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  • A method of atomic layer deposition of al/ti thin films using titanium amino as titanium source
  • A method of atomic layer deposition of al/ti thin films using titanium amino as titanium source
  • A method of atomic layer deposition of al/ti thin films using titanium amino as titanium source

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment one: a kind of Al / Ti thin film atomic layer deposition method using amino titanium as titanium source, comprises the following steps:

[0035] (1) Carry out pretreatment to the substrate wafer of deposition thin film: select the substrate of resistivity 0.01Ωcm, adopt 98%H 2 SO 4 and 30%H 2 o 2 The mixed solution is cleaned, the volume ratio of the two is 7.0:2.0, and then rinsed with ultrapure water, N 2 Blow-dry, cycle cleaning times is 3 times;

[0036] (2) Accurately weigh trimethylamine alane as a deposition aluminum source in a glove box, Ti[N(CH 3 ) 2 ] 4 As the deposition titanium source, the molar ratio of the two is 2.0:0.5. The deposition system is purged with nitrogen for 1 hour, and the nitrogen flow rate is 140mL / min to drive out all the air and moisture in the system;

[0037] (3) Trimethylamine alane and Ti[N(CH 3 ) 2 ] 4And the cleaned substrate in step (1) is put into the thin film deposition system under the protection of nitrogen...

Embodiment 2

[0038] Embodiment two: a kind of Al / Ti thin film atomic layer deposition method using amino titanium as titanium source, comprises the following steps:

[0039] (1) Carry out pretreatment to the substrate wafer of deposition thin film: select the substrate of resistivity 0.02Ωcm, adopt 98%H 2 SO 4 and 30%H 2 o 2 The mixed solution is cleaned, the volume ratio of the two is 7.0:3.0, and then rinsed with ultrapure water, N 2 Blow dry, cycle cleaning times is 5 times;

[0040] (2) Accurately weigh dimethylethylamine alane in the glove box as the deposition aluminum source, Ti[N(CH 2 CH 3 ) 2 ] 4 As the deposition titanium source, the molar ratio of the two is 2.0:1.0. The deposition system is purged with nitrogen for 2 hours, and the nitrogen flow rate is 145mL / min to drive out all the air and moisture in the system;

[0041] (3) Dimethylethylaminealane and Ti[N(CH 2 CH 3 ) 2 ] 4 And the cleaned substrate in step (1) is placed in the thin film deposition system under ...

Embodiment 3

[0042] Embodiment three: a kind of Al / Ti thin film atomic layer deposition method using amino titanium as titanium source, comprises the following steps:

[0043] (1) Carry out pretreatment to the substrate wafer of deposition thin film: select the substrate with resistivity 0.03Ωcm, adopt 98%H 2 SO 4 and 30%H 2 o 2 The mixed solution is cleaned, the volume ratio of the two is 7.0:4.0, and then rinsed with ultrapure water, N 2 Blow dry, cycle cleaning times is 6 times;

[0044] (2) Accurately weigh diethylaluminum hydride as the source of deposited aluminum in the glove box, Ti{N[CH(CH 3 ) 2 ] 2} 4 As the deposition titanium source, the molar ratio of the two is 2.0:1.5, and the deposition system is purged with nitrogen for 2 hours, and the nitrogen flow rate is 145mL / min to drive out all the air and moisture in the system;

[0045] (3) Diethylaluminum hydride and Ti{N[CH(CH 3 ) 2 ] 2} 4 And the cleaned substrate in step (1) is put into the thin film deposition sys...

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Abstract

The invention relates to an Al / Ti thin film atomic layer deposition method using titanium amino as a titanium source, comprising the following steps: (1) pretreatment: select a substrate with a resistivity of 0.01 to 0.04Ωcm, 98%H 2 SO 4 and 30%H 2 o 2 Mixed liquid cleaning, the volume ratio of the two is 7.0:2.0~5.0, rinse with ultrapure water, N 2 Blow dry and cycle cleaning (2) In the glove box, weigh alkylaluminum as the aluminum source and aminotitanium as the titanium source, the molar ratio of the two is 2.0:0.5-2.0, purging the deposition system with nitrogen for 1-3 hours, and the flow rate is 140-150mL / min, drive out the air and moisture in it (3) put the aluminum alkyl and titanium amido in step (2) and the cleaned substrate in step (1) into the thin film deposition system under the protection of nitrogen, and the total pressure is maintained 1.5~3.2×10 3 Pa, the nitrogen flow rate is 100-130mL / min, the temperature of the alkylaluminum and titanium amido is raised to 35-60°C, the temperature of the substrate is raised to 125-140°C, the number of deposition cycles is 180-220 times, and the deposition is completed to obtain an Al / Ti film. The method uses titanium amide as the titanium source, and the film formation is relatively uniform and compact, indicating that titanium amide is an ideal titanium source for atomic layer deposition of Al / Ti thin films.

Description

technical field [0001] The invention relates to a method for preparing an Al / Ti thin film by atomic layer deposition technology. The method uses titanium amido as a titanium source for depositing the Al / Ti thin film, has mild reaction and excellent film-forming performance. The invention belongs to the field of semiconductors, and in particular relates to a method for preparing a semiconductor material surface film. Background technique [0002] With the rapid development of semiconductor technology, the manufacturing process and technology of devices have also undergone changes, and thin films are more and more used, such as Al / Ti film, Ge film, Cu film, SiN, AlN, etc., among which Al / Ti Thin films are widely used in the fabrication of current and emerging semiconductor devices, especially in technologies such as integrated circuits and protective coating cutting. At present, the production technology of Al / Ti thin film is also continuously improved. The commonly used thin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/18C23C16/20
Inventor 丁玉强杨淑艳苗红艳朱振中
Owner JIANGNAN UNIV
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