Lateral current regulative diode and manufacturing method thereof
A constant-current diode, lateral technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage, high pinch-off voltage of constant-current diodes, and poor constant-current capability. Off-voltage, channel length increase, area reduction effect
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[0059] In this embodiment, a lateral constant current diode with a withstand voltage of 180V and a current of about 8E-6A / μm is taken as an example to describe the technical solution of the present invention in detail.
[0060] With the help of TSUPREM4 and MEDICI simulation software provided such as figure 2 Process simulation of the cell structure of the lateral constant current diode shown in (b), the simulation parameters are: the thickness of the initial silicon wafer is about 250 μm, and the concentration of the P-type lightly doped substrate is 8E14cm -3 ; The implantation dose in the diffused N-type well region is 1E12cm -2 , the implantation energy is 120keV, and the push-in time is 800 minutes; the implantation dose in the P-type heavily doped region is 4E15cm -2 , the implantation energy is 60keV; the implantation dose of the first N-type heavily doped region and the second N-type heavily doped region is 4E15cm -2 , the implantation energy is 60keV; the channel l...
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