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Organic electroluminescence device and preparation method thereof

An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of total reflection loss, low light output performance, refractive index difference, etc. Improve luminous efficiency and luminous color stability

Inactive Publication Date: 2015-05-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, the light from ITO reaches the glass, and total reflection will occur), which causes the loss of total reflection, resulting in lower overall light extraction performance

Method used

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  • Organic electroluminescence device and preparation method thereof
  • Organic electroluminescence device and preparation method thereof
  • Organic electroluminescence device and preparation method thereof

Examples

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preparation example Construction

[0036] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:

[0037] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.

[0038] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 is composed of a metal material layer 201 , a luminescent material doped layer 202 and a metal oxide doped layer 203 . A metal material layer is prepared on the surface of the glass substrate by thermal resistance evaporation, and the work function of the material of the metal material layer is -4.0~-5.5eV, and the luminescence is prepared on the surface of the metal material layer 201 by electron beam evaporation. A material doped layer 202, the luminescent material doped layer 202 includes a luminescent material and the first metal oxide material doped in the luminescent material, and the material of the lumines...

Embodiment 1

[0057] The structure prepared in this example is glass substrate / Ag / Alq 3 :ZrO 2 / MoO 3 :Alq 3 / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.

[0058] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. Prepare a scattering layer on a glass substrate. The scattering layer is composed of a metal material layer, a luminescent material doped layer and a metal oxide doped layer. The metal material layer is prepared by thermal resistance evaporation on the surface of the glass substrate. The material is Ag and the thickness is 10nm. , on the surface of the metal material layer, the luminescent material doped layer is prepared by thermal resistance evaporation, and the material is Alq 3 :ZrO 2 , Alq 3 with ZrO 2 The mass ratio is 1.5:0.1, the thickness is 70nm, and the ...

Embodiment 2

[0066] The structure prepared in this example is glass substrate / Al / DCJTB:MgO / WO 3 :AND / IZO / V 2 o 5 / TCTA / ADN / Bphen / CsN 3 / Al organic electroluminescent devices.

[0067] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer consists of a metal material layer, a luminescent material doped layer and a metal oxide layer. The metal material layer is prepared by thermal resistance evaporation on the surface of the glass substrate, the material is Al, and the thickness is 5nm, and the luminescent material doped layer is prepared by thermal resistance evaporation on the surface of the metal material layer, and the material is DCJTB:MgO , the mass ratio of DCJTB to MgO is 1:0.1, and the thickness is 50nm. The metal oxide doped layer is prepared by electron beam evaporation on the surface of the luminescent material doped laye...

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Abstract

The invention discloses an organic electroluminescence device which comprises a glass substrate, a scattering layer, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transfer layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the scattering layer consists of a metal material layer, a light emitting material doped layer and a metallic oxide doped layer; the power function of the material of the metal material layer is minus 4.0-minus 5.5eV; the light emitting material doped layer comprises a light emitting material and a first metallic oxide material doped in the light emitting material; the refractive index of the first metallic oxide material is 1.8-2.0; the metallic oxide doped layer comprises a second metallic oxide and a light emitting material doped in the second metallic oxide; the HOMO energy level of the second metallic oxide is minus 5.2-minus 6.0eV; the light emitting material is described above. The organic electroluminescence device disclosed by the invention is relatively high in light emission efficiency. The invention further provides a preparation method of the organic electroluminescence device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/52H01L51/56
Inventor 周明杰黄辉张振华王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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