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Preparation method of CdTe sputtering target material

A technology of sputtering targets and hot pressing temperature, which is applied in the field of solar cell materials, can solve the problems of inability to produce high-quality CdTe targets, large grain size, and difficult cutting of materials, and achieve shortened preparation time, low equipment prices, The effect of low production cost

Active Publication Date: 2015-06-10
有研资源环境技术研究院(北京)有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] Because the CdTe material is very brittle, the ingot after vacuum smelting cannot be processed through repeated plastic deformation, and there are defects such as segregation in the CdTe ingot produced by smelting, and there are many internal holes and the grain size is too large; in addition, the material is difficult to process. The waste of raw materials in cutting and processing is serious, so that the vacuum melting technology cannot produce high-quality large-size CdTe targets

Method used

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  • Preparation method of CdTe sputtering target material
  • Preparation method of CdTe sputtering target material
  • Preparation method of CdTe sputtering target material

Examples

Experimental program
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Effect test

Embodiment 1～9

[0036] 1. Put the high-purity CdTe powder with a purity of 5N into a high-purity graphite mold and cold-press to form it. The pressure is 20-80 MPa, the temperature is room temperature, and the time is 20-50 minutes. After cold-pressing, vacuum sintering process is carried out; The particle size X50 (the corresponding particle size when the cumulative powder distribution is 50%) is 3-5 μm.

[0037] 2. The heating process is divided into two stages: the first stage is from room temperature to 450°C, and the heating rate is 15-25°C min -1 , keep warm for 5-20min after reaching 450°C; the second stage is from 450°C to hot pressing temperature, pressurization starts as the temperature rises, and the heating rate is 8-12°C·min -1 .

[0038] 3. After the temperature rises to the target temperature, the pressure will reach the appropriate pressure, and then heat preservation and pressure preservation will start. The temperature at this stage is 500-800°C, and the heat preservation a...

Embodiment 10～11

[0044] In order to obtain the preparation temperature range of the CdTe target material, low temperature and high temperature experiments were carried out respectively, and compared with Examples 1-9.

[0045] 1. The same as in Examples 1-9, put 5N high-purity CdTe powder into a high-purity graphite mold and cold-press molding, the cold-press pressure is 20-80MPa, the temperature is room temperature, and the cold-press time is 20-50min. Carry out vacuum sintering process.

[0046] 2. The heating process is divided into two stages: the first stage is from room temperature to 450°C, and the heating rate is 15-25°C min -1 , keep warm for 5-20min after reaching 450°C; the second stage is from 450°C to hot pressing temperature, pressurization starts as the temperature rises, and the heating rate is 8-12°C·min -1 .

[0047] 3. After the temperature rises to the target temperature, the pressure reaches the target pressure, and then heat preservation and pressure maintenance are sta...

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Abstract

The invention relates to a preparation method of a CdTe sputtering target material, and belongs to the field of solar cell materials. The preparation method comprises the following steps: (1) crushing and grinding a CdTe block prepared through vacuum melting into powder, and loading the obtained CdTe powder into a mould for cold press moulding; (2) after the cold press moulding is finished, placing into a hot pressed furnace for vacuum hot pressed sintering, wherein the hot pressing temperature is 500-800 DEG C, the pressure is 20-200 MPa, and the temperature pressure keeping time is 30-120 minutes; and (3) after the vacuum hot pressed sintering is finished, stopping the hot pressed furnace for cooling, demoulding for taking a material, and machining. The CdTe sputtering target material obtained through the preparation method disclosed by the invention can achieve the density more than 98%, the average grain size less than 45 nanometers and the target material crystallinity more than 80%.

Description

technical field [0001] The invention relates to a method for preparing a CdTe sputtering target, in particular to a method for preparing a sputtering target with high density and high crystallinity, and belongs to the field of solar cell materials. Background technique [0002] At present, CdTe sputtering target is one of the important raw materials for the production of CdTe thin film solar cells. CdTe in the cell is a p-type semiconductor and is the main light-absorbing layer of the cell. The most core part. Using CdTe sputtering targets as raw materials, the technology for preparing CdTe solar cell thin-film absorbing layers is relatively mature. Generally, CdTe targets are prepared into CdTe light absorbing layers by radio frequency magnetron sputtering. In order to reduce costs and simplify processes, American scholars have studied the method of RF magnetron sputtering CdTe thin film solar cell absorption layer on soda lime glass (A.Fischer, D.Grecu, U.Jayamaha, et al....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 储茂友王星明白雪韩沧张碧田
Owner 有研资源环境技术研究院(北京)有限公司
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