Method for forming semiconductor device

Abstract

A method for forming a semiconductor device comprises the following steps: providing a semiconductor substrate, wherein gate structures are formed on the surface of the semiconductor substrate; forming offset spacers at the two sides of the gate structures; performing co-doping (including first doping and second doping) on the offset spacers, wherein the first doping is used for capturing defects in the offset spacers, and the second doping improves the content of doped ions in the regions, near the surface of the semiconductor substrate, of the offset spacers; forming lightly doped regions in the semiconductor substrate at the two sides of the gate structures by using the offset spacers as masks; forming main spacers on the side walls of the offset spacers; and forming heavily doped regions in the semiconductor substrate at the two sides of the gate structures by using the main spacers as masks. According to a semiconductor device formed by the method of the invention, the content of boron ions in the semiconductor substrate below the offset spacers is reduced, the probability that boron ions diffuse into a channel region is reduced, the short channel effect of the semiconductor device is improved, and the electrical performance of the semiconductor device is optimized.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] The main semiconductor device of integrated circuits, especially VLSIs, is metal-oxide-semiconductor field effect transistors (MOS transistors). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices continue to decrease, and the geometric dimensions of semiconductor devices follow Moore's law. [0003] With the rapid development of semiconductor manufacturing technology, the feature size (CD) of semiconductor devices has entered the sub-micron stage. In order to obtain faster computing speed, larger data storage capacity and more functions, semiconductor integrated circuits are constantly developing towards higher component density and high integration. The gate length of metal oxide semiconductor devices,...

AI Technical Summary

Problems solved by technology

[0005] However, in the formation process of the actual semiconductor device, it is found that despite the LDD process, the short channel effect in the semiconductor device still exists, and the electrical performance of the semiconductor device still needs to be improved

Images