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Phase shift mask and method for producing same

A technology of phase shift mask and manufacturing method, which is applied in the photolithographic process of pattern surface, semiconductor/solid device manufacturing, ion implantation plating, etc., which can solve the problem of increased manufacturing cost, reduced processing efficiency, and inability to effectively utilize Light and other problems, to achieve the effect of reducing the difference in transmittance

Active Publication Date: 2015-06-24
ULVAC COATING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to study only the exposure conditions and development conditions for photomask miniaturization, so new technologies for further miniaturization are sought
[0010] In particular, when the composite wavelengths of g-line, h-line, and i-line are used as described above, since the transmittance of the mask for each wavelength is different, when the exposure process is performed on a large area like FPD, at high Defects due to light shading or phase shift occur in fine patterning, and as a result, there is a problem that high-definition cannot be handled
[0011] In addition, when processing corresponding to high-definition is performed by limiting a specific wavelength to cope with high-definition, light in other wavelength regions cannot be effectively used, and there is a problem that the processing efficiency decreases and the manufacturing cost increases.

Method used

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  • Phase shift mask and method for producing same
  • Phase shift mask and method for producing same
  • Phase shift mask and method for producing same

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no. 1 approach

[0042] Next, one Embodiment of the manufacturing method of the phase shift mask which concerns on this invention is demonstrated based on drawing.

[0043] figure 1 It is a process drawing which schematically shows the manufacturing method of the phase shift mask which concerns on this embodiment.

[0044] The phase shift mask of this embodiment is comprised as the mask for patterning with respect to the glass substrate for FPDs, for example. As will be described later, in the patterning of the glass substrate using this mask, the composite wavelength of i-line, h-line, and g-line is used for exposure light.

[0045] In the manufacturing method of the phase shift mask according to the present embodiment, first, as figure 1 As shown in (a), the light shielding layer 11 is formed on the transparent substrate 10 .

[0046] As the transparent substrate 10, a material excellent in transparency and optical isotropy, for example, a quartz glass substrate is used. The size of the ...

no. 2 approach

[0089] Figure 4 It is a process drawing explaining the manufacturing method of the phase shift mask which concerns on 2nd Embodiment of this invention. In addition, in Figure 4 in, for with figure 1 Corresponding parts are denoted by the same symbols, and detailed description thereof will be omitted.

[0090] The phase shift mask 2 of the present embodiment ( Figure 4 (J)) has an alignment mark for alignment in the peripheral part, and this alignment mark is formed by the light-shielding layer 11P2. Next, the manufacturing method of the phase shift mask 2 is demonstrated.

[0091] First, a light-shielding layer 11 is formed on a transparent substrate 10 ( Figure 4 (A)). Next, a photoresist layer 12 is formed on the light shielding layer 11 ( Figure 4 (B)). The photoresist layer 12 can be positive type or negative type. Next, by exposing and developing the photoresist layer 12, a resist pattern 12P2 is formed on the light shielding layer 11 ( Figure 4 (C)).

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Abstract

A method for producing a phase shift mask includes the step of sputtering a target made of a chromium-based material in an atmosphere of a mixture gas containing 10.4 % or less of an acidic gas.

Description

technical field [0001] The present invention relates to a phase shift mask capable of forming a fine and high-precision exposure pattern and a method for manufacturing the same, and particularly relates to a technology preferably used in the manufacture of flat panel displays. [0002] This application claims priority based on Japanese Patent Application No. 2012-285845 for which it applied in Japan on December 27, 2012, and uses the content here. Background technique [0003] In the manufacturing process of semiconductor devices and flat panel displays (FPD), phase shift masks are used to expose and transfer fine patterns on resist films formed on substrates made of silicon or glass. [0004] In the FPD, it has recently been developed that the line width size is made finer by improving the precision of patterning, thereby greatly improving the image quality. As the line width accuracy of the photomask and the line width accuracy of the substrate on the transfer side become...

Claims

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Application Information

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IPC IPC(8): G03F1/26C23C14/06H01L21/027
CPCC23C14/0676G03F1/26
Inventor 望月圣中村大介影山景弘
Owner ULVAC COATING
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