Method for increasing watermelon grafting survival rate

A technology of survival rate and watermelon, applied in the field of improving the survival rate of watermelon grafting, can solve the problems of inadequate management measures, difficult popularization and utilization, inconvenient use, etc., and achieves the effects of easy control, increased stem thickness, and high survival rate.

A technology of survival rate and watermelon, applied in the field of improving the survival rate of watermelon grafting, can solve the problems of inadequate management measures, difficult popularization and utilization, inconvenient use, etc., and achieves the effects of easy control, increased stem thickness, and high survival rate.

CN104756771AInactive Publication Date: 2015-07-08SICHUAN AGRI UNIV

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  • Method for increasing watermelon grafting survival rate
  • Method for increasing watermelon grafting survival rate

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Experimental program
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Embodiment 1

[0031] (1) Variety selection: In this example, "Jingxinzhen No. 1" gourd was selected as the rootstock for grafting, and "Zaojia (8424)" watermelon was used as the scion.

[0032] (2) Preparation of seedling-raising substrate: peat and vermiculite were mixed at a volume ratio of 2:1 to form a composite substrate, and then packed in 72-hole trays.

[0033] (3) Seed treatment and sowing: rootstock gourd seeds are first soaked to accelerate germination, and scion watermelon seeds are soaked and accelerated to germination after 5 to 7 days. Soak in warm water at ℃ for 10 minutes, stir continuously, and continue soaking for 6 hours after cooling down to room temperature. Finally, the seeds are wrapped with wet gauze and placed in a 30℃ incubator to accelerate germination. After rootstock seeds and scion seeds are white, they are successively sown in 72-hole hole trays in the greenhouse, and after covering the matrix, spray 4000 times of 99% hymexazol powder. Cover the hole tray wi...

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Abstract

The invention discloses a method for increasing the watermelon grafting survival rate. According to the method, abscisic acid solution is sprayed to watermelon seedlings and rootstock seedlings before grafting, and small sheds which can preserve heat and humidity and is subjected to bactericide treatment are set up in advance; grafting is conducted through the root-cutting cleft grafting method, and bactericide is sprayed after grafting is completed. The plant stress resistance is improved, the grafting method is efficient, the suitable environment is beneficial to fusion of the watermelon seedlings and the rootstock seedlings, the high survival rate and strong seedlings are guaranteed, seedling recovering is quick after the watermelon seedlings are transplanted, and a basis is laid for achieving high yield and high quality. Test results show that by adopting the method, the grafting survival rate reaches 98.7%, and the repeat deviation is small; compared with conventionally grafted seedlings, the stem diameter, the maximum leaf area, the root cap ratio, the chlorophyll content and the root vigor are increased.

Description

technical field [0001] The invention belongs to the field of crop planting, and in particular relates to a method for improving the survival rate of watermelon grafting. Background technique [0002] In recent years, watermelon continuous cropping obstacles have become increasingly serious, especially under protected cultivation conditions, soil-borne diseases have aggravated, affecting the normal growth of watermelon plants, resulting in reduced yield and quality, hindering the development of the watermelon industry. Watermelon grafting cultivation is an effective technical measure to overcome continuous cropping obstacles and prevent the occurrence of diseases such as Fusarium wilt. However, grafting seedlings have high requirements on grafting technology, environmental conditions and management measures. The current technology is mainly aimed at the improvement of grafting methods and management measures, and does not involve the use of plant growth regulators to improve ...

Claims

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Application Information

Patent Timeline
08 Jul 2015
Publication
CN104756771A
IPC
A01G1/06
Inventors
秦耀国; 杨翠芹