Detection structure for wafer bonding, preparation method and detection method

A detection structure, wafer bonding technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of unusable devices, inability to monitor wafers, destructive detection, etc., and achieve a wide coverage area Effect

Active Publication Date: 2015-07-15
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sampling points are limited and cannot fully reflect the bonding quality of the entire wafer (Wafer).
[0007] Therefore, with the development of technology, the technology of bonding two wafers will be applied in the preparation process of MEMS devices and other devices, but there are various problems in the detection of the bonding quality between the wafers, one is destructive Second, due to the limitation of sampling, the entire wafer cannot be effectively monitored during the sampling process, so it is necessary to improve the current detection structure and detection method to eliminate the above problems

Method used

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  • Detection structure for wafer bonding, preparation method and detection method
  • Detection structure for wafer bonding, preparation method and detection method
  • Detection structure for wafer bonding, preparation method and detection method

Examples

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Embodiment 1

[0062] Figure 2e Is a schematic structural diagram of a test structure in a specific embodiment of the present invention, where Figure 2e The figure on the right is a partial enlarged view of the marked area in the figure on the left;

[0063] The test structure includes a junction between two wafers, where the wafer below is a wafer forming MEMS components, and the wafer includes a semiconductor substrate (not shown in the figure), and the semiconductor Various materials commonly used in the art can be selected, and various devices, such as various CMOS devices, are also formed in the semiconductor substrate, so that the CMOS process and the MEMS process will be joined to form a CMEMS process. Both the device and the forming method can be designed and prepared as required, and will not be repeated here.

[0064] The test structure further includes a MEMS substrate 204, on which MEMS components are formed, wherein the type of the MEMS component is determined according to the type...

Embodiment 2

[0081] The present invention also provides a method for detecting the quality of wafer bonding by selecting the above-mentioned test structure. In the method, the resistance test device is connected to the interconnection metal layer 205 through a WAT ​​probe, and the voltage is applied. In the case of measuring the resistance value, in the case of the current flow as image 3 As shown, the current enters the bonding interface described in the figure through the interconnection metal layer at one end of the MEMS substrate 204, and then enters the conductive material layer 203 through the bonding interface, and after flowing through the conductive material layer 203 Enter the bonding interface at the other end, and finally to the interconnection metal layer at the other end of the MEMS substrate 204, and then connect to the resistance test device via a WAT ​​probe. The resistance tested in this process is the interconnection metal layer 205 , The bonding interface and the conduct...

Embodiment 3

[0089] In the present invention, the test structure is realized by changing the preparation process flow of the MEMS device without affecting the device structure. Therefore, the test structure changes the destructive test in the prior art.

[0090] Attached below Figure 2a-2e The preparation method of the test structure in the present invention will be further explained.

[0091] First, step 201 is performed to provide a semiconductor substrate 201, and an isolation layer 202 is formed on the semiconductor substrate 201.

[0092] Specifically, refer to Figure 2a The semiconductor substrate 201 can be a commonly used semiconductor material. In this embodiment, the semiconductor substrate 201 is silicon.

[0093] Wherein, the isolation layer 202 can be made of commonly used insulating materials, such as SiO 2 , SiN, carbon-doped silicon oxide (SiOC), or silicon carbonitride (SiCN), etc. Alternatively, a film in which a SiCN thin film is formed on a fluorocarbon (CF) can also be used....

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Abstract

The invention relates to a detection structure for wafer bonding, a preparation method and a detection method. The detection structure comprises an MEMS (Micro-Electro-Mechanical System) substrate and a cap layer, wherein an MEMS component is formed on the MEMS substrate, and interconnection metal layers are formed on the two sides of the MEMS component; the cap layer comprises raised connecting ends arranged on the two ends, and a groove located between the connecting ends; each connecting end comprises a connecting end body and a conductive material layer located on the corresponding connecting end body, wherein the conductive material layers are also formed on the bottom and the sidewall of the groove; the cap layer and the MEMS substrate are integrally jointed through the connecting ends and the interconnection metal layers; and a joint interface is formed on a joint of each connecting end and the corresponding interconnection metal layer. The detection structure has the advantages that (1) a device (Device) cannot be destroyed and can be packaged and used continuously after detection; and (2) the detection structure has no impact on the device thanks to the change of a process flow (Process Flow).

Description

Technical field [0001] The present invention relates to the field of semiconductors. Specifically, the present invention relates to a wafer bonding inspection structure, preparation method and inspection method. Background technique [0002] With the continuous development of semiconductor technology, in the market of motion sensor products, smart phones, integrated CMOS and micro-electromechanical system (MEMS) devices have increasingly become the most mainstream and advanced technologies, and with technological updates , The development direction of this kind of transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, MEMS pressure sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensors, automotive brake system air pressure sensors, automotive engine intake manifold pressure sensors (TMAP), diesel common rail pressure sensors; consumer electronics: such as tire pressure Pressure se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00
Inventor 郑超骆凯玲刘炼
Owner SEMICON MFG INT (SHANGHAI) CORP
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