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A method for controlling surface temperature during homoepitaxial growth of single crystal diamond

A single crystal diamond and single crystal growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem that the surface temperature of the seed crystal is difficult to be effectively controlled, and achieve the effect of ensuring uniformity and good growth effect

Active Publication Date: 2017-06-27
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the problem that the surface temperature of the seed crystal is difficult to be effectively controlled in the existing MWCVD growth system, the present invention provides a method for controlling the surface temperature of the diamond when growing single crystal diamond by the homoepitaxial method

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  • A method for controlling surface temperature during homoepitaxial growth of single crystal diamond
  • A method for controlling surface temperature during homoepitaxial growth of single crystal diamond
  • A method for controlling surface temperature during homoepitaxial growth of single crystal diamond

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specific Embodiment approach 1

[0033] Specific embodiment 1: This embodiment provides a method for controlling the surface temperature of diamonds when growing single crystal diamond by homoepitaxial method, including the following steps: diamond seed cleaning→welding→selecting heat insulation wire→making heat insulation wire→place sample→ Preparations before growth → diamond growth, the specific content is as follows:

[0034] 1. Diamond seed cleaning:

[0035] Put the diamond seed crystal and the metal molybdenum substrate wafer into acetone, deionized water, and absolute ethanol successively, and clean the seed crystal and molybdenum alloy substrate under the condition of ultrasonic power of 100~300W for 15~30min. .

[0036] 2. Welding:

[0037] The seed crystal is welded on the molybdenum substrate wafer with gold foil to fix the seed crystal.

[0038] Three, choose insulation wire (Spacer):

[0039] In order to realize the controllable diamond surface temperature, tungsten wire is selected as the heat insulatio...

specific Embodiment approach 2

[0052] Specific implementation manner 2: This implementation manner provides a method for controlling the surface temperature of diamond when growing single crystal diamond by homoepitaxial method, and the specific content is as follows:

[0053] 1. Diamond seed cleaning:

[0054] Put the diamond seed crystal and the metal molybdenum substrate wafer into acetone, deionized water, and absolute ethanol successively, and clean them for 15min, 10min, and 20min respectively under the condition of 200W ultrasonic power to obtain clean seed crystal and molybdenum alloy lining bottom.

[0055] 2. Welding:

[0056] The seed crystal is welded on the molybdenum substrate wafer with gold foil to fix the seed crystal.

[0057] Three, choose insulation wire (Spacer):

[0058] In order to realize the controllable diamond surface temperature, tungsten wire is selected as the heat insulation medium, which can well control the heat flow on the surface of the seed crystal, so that the diamond surface temp...

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Abstract

The invention relates to a method for controlling the surface temperature during homoepitaxial growth of single crystal diamond, which belongs to the technical field of crystal growth. Aiming at the problem that the surface temperature of the seed crystal in the existing MWCVD growth system is difficult to effectively control, the method of the present invention includes the following steps: diamond seed crystal cleaning→welding→selecting heat insulating wire→making heat insulating wire→placing samples→preparing for growth Work → diamond growth. The invention ensures that the surface temperature of the diamond sample will not be too low due to too fast heat conduction by preparing the heat insulation wire for heat insulation, and selects heat insulation wires of different specifications according to different process parameters to realize the controllable surface temperature of the diamond sample and make the diamond sample The growth is carried out under the required process parameters such as temperature. Due to the special shape of the insulation wire, the surface of the diamond sample is guaranteed to be level, and it is in uniform contact with the plasma ball, which ensures the uniformity of the temperature field and the density of the carbon source, making the growth effect better.

Description

Technical field [0001] The invention belongs to the technical field of crystal growth and relates to a method for controlling the surface temperature of the diamond when a single crystal diamond is grown by a homoepitaxial method. Background technique [0002] In recent years, large-size single crystal diamonds and quasi-single crystal diamonds, due to their extremely high hardness, highest thermal conductivity, extremely wide electromagnetic transmission frequency band, excellent radiation resistance and corrosion resistance, have been used in precision machining, high High-tech fields such as frequency communication, aerospace, and cutting-edge technology are increasingly becoming basic, critical and even the only material solutions. The traditional synthetic single crystal diamond uses the high temperature and high pressure (HPHT) method. The diamond prepared by this method contains more impurities, high defect density, relatively poor quality, and small size, which is far fro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/16C30B29/04
Inventor 舒国阳代兵朱嘉琦王杨杨磊韩杰才
Owner HARBIN INST OF TECH
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