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Preparation method of suspended graphene

A technology of graphene and high-temperature thermal decomposition method, which is applied in the field of semiconductors, can solve the problems of cumbersome preparation process and chemical pollution affecting the potential performance of suspended graphene, and achieve the effect of simple preparation method, strong effect and reduced impact

Active Publication Date: 2015-07-22
SHENZHEN MERRIME NANOPORE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation process of these two methods is cumbersome, and the inevitable chemical contamination will affect the potential performance of suspended graphene.

Method used

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  • Preparation method of suspended graphene
  • Preparation method of suspended graphene
  • Preparation method of suspended graphene

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Embodiment 1

[0033] The present embodiment provides a kind of preparation method of circular suspended graphene, comprising:

[0034] Step A: transfer a circle with a diameter of 1 μm to a 6H-silicon carbide single crystal substrate by photolithographic pattern transfer method, and then use reactive ion etching (RIE) to etch through the substrate ( >10μm) corresponding circular hole structure;

[0035] Step B: annealing in an atmosphere of 9 Pascal partial pressure of argon gas and 1 Pascal partial pressure of hydrogen gas to remove defects on the surface of the silicon carbide substrate;

[0036] Step C: using a graphite crucible to provide an additional carbon source, in a carbon-rich environment, keep at 1300° C. for 30 minutes, and thermally decompose 6H-silicon carbide single crystal epitaxial growth of graphene at high temperature. In this process, first, a layer of graphene is grown on the silicon carbide substrate, and then the same carbon atom boundary as the circular hole struct...

Embodiment 2

[0041] This embodiment provides a method for preparing suspended graphene similar to the graphene six-membered ring structure, including:

[0042] Step A: Etch a graphic structure similar to the graphene six-membered ring structure on the 4H-silicon carbide single crystal substrate by focused ion beam etching, in which the diameter of the circular hole is about 2 μm, the line width is about 800 nm, and the depth of the structure is About 3μm;

[0043] Step B: using a graphite crucible to provide an additional carbon source, in a carbon-rich environment, keep at 1600° C. for 20 minutes, and thermally decompose 4H-silicon carbide single crystal epitaxial growth of graphene at high temperature. In this process, first, a layer of graphene is grown on the silicon carbide substrate, and then the same carbon atom boundary as the structure is formed at the edge of the graph structure obtained in step A. Second, excess carbon vapor in the environment combines with the carbon atoms at ...

Embodiment 3

[0046] The present embodiment provides a kind of preparation method of the suspended graphene of English letter " IOP " word, comprising:

[0047] Step A: transfer the English letter "IOP" with a line width of about 800nm ​​to the 6H-silicon carbide single crystal substrate by photolithographic pattern transfer method, and then use reactive ion etching (RIE) on the 6H-silicon carbide single crystal substrate Corresponding structures were etched to a depth of about 3 μm.

[0048] Step B: annealing in an atmosphere of 9 Pascal partial pressure of argon and 1 Pascal partial pressure of hydrogen;

[0049] Step C: Preparing a carbon-rich environment by introducing methane gas, maintaining at 1300° C. for 20 minutes, thermally decomposing 6H-silicon carbide single crystal epitaxially growing graphene at high temperature. In this process, first, a layer of graphene is grown on the silicon carbide substrate, and then the same carbon atom boundary as the structure is formed at the edg...

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Abstract

The invention provides a preparation method of suspended graphene. The preparation method comprises the following steps: step A, adopting a semiconductor technology to prepare an expected structure on a silicon carbide substrate; step B, in a carbon-rich environment, adopting a high-temperature thermal decomposition method to prepare the suspended graphene. The preparation method is simple in preparation process, free of chemical pollution, and suitable for mechanical and automatic manufacture; the obtained suspended graphene is easier to use.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing graphene. Background technique [0002] Graphene is a two-dimensional thin film of carbon atoms with a honeycomb structure. Due to its excellent electron mobility, single atomic layer thickness and ultra-high mechanical strength, it is considered to have broad application prospects in many fields such as information technology, semiconductors, biosensing, energy and environmental protection. [0003] In the field of semiconductor technology, graphene is considered to replace silicon as the basic material of next-generation semiconductor technology due to its excellent electrical properties. Traditional graphene is generally grown on or transferred to insulating substrates, and then used to prepare functional devices. However, the interaction between graphene and the substrate will reduce the electron mobility of graphene, which in turn reduces the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 周智胡颖单欣岩陆兴华
Owner SHENZHEN MERRIME NANOPORE TECH CO LTD
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