Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell

A quantum dot sensitization and solar cell technology, which is applied in the field of preparation of tin-doped indium phosphide quantum dot sensitized solar cells, can solve the problem of low short-circuit current, achieve the effects of enhancing short-circuit current, preventing oxidation, and convenient operation

Inactive Publication Date: 2015-07-29
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a preparation method of tin-doped indium phosphide quantum dot sensiti

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell
  • Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell
  • Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0043] Example

[0044] The invention provides a method for preparing a tin-doped indium phosphide quantum dot sensitized solar cell. The method is to dope tin (Sn) ions into indium phosphide (InP) quantum dots to form Sn:InP quantum dots As a sensitizer, it is then assembled into a quantum dot-sensitized solar cell. Such as figure 1 As shown, the present invention is mainly composed of the synthesis of dopant ion indium carboxylate precursor solution, the synthesis of tin-doped indium phosphide quantum dots, the separation and purification of quantum dots, the preparation of quantum dot phase transfer, and the preparation of quantum dot sensitized photoanodes , Quantum dot sensitized solar cells are composed of several major processes.

[0045] 1. Synthesis of indium carboxylate precursor solution of dopant ion

[0046] Sn 2+ , In 3+ Mix with long-chain alkyl acid (one of dodecanoic acid to octadecanoic acid is used in this embodiment) according to the molar ratio of 1:10:30, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method for a tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method comprises the following steps: (1) mixing Sn<2+>, In <3+> and long-chain alkyl acid to obtain a mixture, and adding the mixture into an octadecene solvent to mix to obtain a mixed solution; (2) preparing the mixed solution into an carboxylic acid indium precursor solution containing dopant ions; (3) adding tri (trimethyl silicyl) phosphine to prepare a tin-doped indium phosphide quantum dot solution; (4) separating and purifying the indium phosphide quantum dot solution; (5) transferring the indium phosphide quantum dot solution into a water phase from an oil phase; (6) preparing a quantum dot sensitized FTO/TiO2 electrode plate; (7) assembling the quantum dot sensitized FTO/TiO2 electrode plate with a cuprous sulfide electrode plate, and injecting polysulfide electrolyte to obtain the tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method is reasonable in design and convenient to operate, and the short-circuit current and the photoelectric conversion efficiency of the cell are remarkably improved, and therefore, the preparation method is suitable for being popularized and applied.

Description

technical field [0001] The invention relates to a quantum dot sensitized solar cell, in particular to a preparation method of a tin-doped indium phosphide quantum dot sensitized solar cell. Background technique [0002] With the decrease of earth's fossil energy, the increasing severity of the greenhouse effect and the increasing demand of human beings for energy, the research of new materials, new technologies and new methods for "green" new energy is becoming more and more important. Efficient use of solar power generation is one of the goals pursued by human beings, especially solar photovoltaic power generation. At present, the laboratory efficiency of solar cells based on monocrystalline silicon and polycrystalline silicon is close to its theoretical upper limit. The market is mainly based on crystalline silicon solar cells. Thin-film batteries are also being promoted and used. The highest laboratory efficiency of these thin-film batteries has reached more than 20%...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01G9/20H01G9/042
Inventor 杨锁龙赖新春赵晓冲赵鹏翔杨盼杨蕊竹
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap