Graphene film preparation method

A graphene film and graphene technology, applied in the preparation of graphene film, improving the electrical and thermal conductivity of graphene film, can solve the problems such as difficult to achieve continuous, high polyimide film, heteroatom overflow, etc., to achieve Improve the crystal structure of graphene film, reduce square resistance, and improve the effect of electrical and thermal conductivity

Active Publication Date: 2015-08-12
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the film prepared by this method has high requirements for polyimide film, and only a few varieties can meet the requirements; in addition, a large number of heteroatoms will overflow during the carbonization and graphitization process, resulting in shrinkage of the film, making it difficult to achieve continuous production.

Method used

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  • Graphene film preparation method

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Experimental program
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Effect test

Embodiment 1

[0020] Sprinkle the graphene powder evenly on the paper base, plastic base film or steel belt that is fixed or moving forward at a constant speed, and then rolled by multiple rollers, the powder is pressed into a film by mechanical force; the pressed film is placed in a graphite furnace in N 2 High temperature treatment under gas protection, N 2 The flow rate is 200ml / min, the temperature is raised to 1000°C at a heating rate of 10°C / min, and the final temperature is kept for 60 minutes. After the end, it is naturally cooled to obtain a graphene film with high electrical and thermal conductivity, and the film thickness is 33.8 μm.

Embodiment 2

[0022] Sprinkle the graphene powder evenly on the paper base, plastic base film or steel belt that is fixed or moving forward at a constant speed, and then through multi-roller rolling, the powder is mechanically pressed into a film, and the pressed film is placed on graphite in the furnace; in N 2 High temperature treatment under gas protection, N 2 The flow rate is 200ml / min, the temperature is raised to 1500°C at a heating rate of 10°C / min, and the final temperature is kept for 60 minutes. After the end, it is naturally cooled to obtain a graphene film with high electrical and thermal conductivity, and the film thickness is 33.8 μm.

Embodiment 3

[0024] Sprinkle the graphene powder evenly on the paper base, plastic base film or steel belt that is fixed or moving forward at a constant speed, and then through multi-roller rolling, the powder is mechanically pressed into a film, and the pressed film is placed on graphite In the furnace; high temperature treatment is carried out under the protection of argon gas, the argon gas flow rate is 200ml / min, the temperature is raised to 2000°C at a heating rate of 10°C / min, and the final heat preservation is 60min, and after the end, it is naturally cooled to obtain high electrical and thermal conductivity. Graphene film with a film thickness of 33.8 μm.

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Abstract

The invention relates to a graphene film preparation method, and belongs to the technical field of graphene films. The method comprises: uniformly spreading graphene or graphite sheet powder on a paper base, plastic-based film or steel plate being in a stationary or moving forward at a uniform speed, carrying out multi-roller rolling, pressing the powder into a film through mechanical force so as to prepare a graphene or graphite sheet film, fixing the pressed film into a graphite furnace in a coil or sheet manner, carrying out a high temperature treatment under the protection of an inert gas, and naturally cooling after completing the high temperature treatment so as to obtain the completely-graphitized graphene film. According to the present invention, on the basis of no loss of the film weight and no change of the film morphology and the film thickness, the graphene film with the complete structure is obtained through the high temperature treatment so as to effectively reduce the sheet resistance and substantially improve the thermal conductivity coefficient; and the method has characteristics of simple implementation process, easy process, no pollution, and good industrial prospects.

Description

technical field [0001] The invention relates to a preparation method of a graphene film, in particular to a method for improving the electrical and thermal conductivity of the graphene film, and belongs to the technical field of the graphene film. Background technique [0002] Graphene is made of sp 2 Monoatomic layer crystals covalently composed of hybridized carbon atoms in a two-dimensional periodic honeycomb lattice structure. Its unique two-dimensional crystal structure gives graphene many superior properties, such as high electron mobility, high current density, and high mechanical strength. etc. Because of these characteristics, graphene is considered to be an ideal material for manufacturing transparent conductive films, high-frequency transistors, hydrogen storage batteries, and even integrated circuits, and has broad market application prospects. [0003] In the graphene structure, the p orbitals of coplanar carbon atoms overlap each other to form large π bonds, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C04B35/52C04B35/622
Inventor 武德珍张梦颖田国峰王子琦齐胜利赖超英
Owner BEIJING UNIV OF CHEM TECH
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