Submicron-scale low-loss single-crystal yttrium-iron-garnet film liquid-phase epitaxy preparation method

A yttrium-iron garnet, sub-micron technology, applied in the field of liquid phase epitaxy preparation of sub-micron low-loss single crystal yttrium iron garnet thin film, can solve the problem that cannot meet the requirements of spin device ferromagnetic resonance line width, shorten Growth time and other issues, to achieve the effect of high loss, large growth interface roughness, and dense structure

Inactive Publication Date: 2015-08-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to reduce the thickness of the YIG film, the first idea is to shorten the growth time at a lower growth rate, but the ferromagnetic resonance linewidth of the single crystal YIG film with a thickness less than 1 μm prepared by this method is greater than 100Oe, which is far from Cannot meet the requirements of spin devices for ferromagnetic resonance linewidth

Method used

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  • Submicron-scale low-loss single-crystal yttrium-iron-garnet film liquid-phase epitaxy preparation method
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  • Submicron-scale low-loss single-crystal yttrium-iron-garnet film liquid-phase epitaxy preparation method

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preparation example Construction

[0025] A liquid phase epitaxy preparation method for a submicron low-loss single crystal yttrium iron garnet thin film, specifically comprising the following steps:

[0026] Step 1: Take Y 2 o 3 , Fe 2 o 3 , PbO and B 2 o 3 As the raw material, the above-mentioned raw materials were accurately weighed, wherein, Y 2 o 3 , Fe 2 o 3 , PbO and B 2 o 3 The mass ratio of the mixture is 0.486:10.315:87.45:1.748, ground and mixed in an agate mortar, placed in a platinum crucible, melted at 1100-1150°C for 24 hours, then stirred at 1000°C for 12 hours, and mixed evenly to obtain a melt;

[0027] Step 2: Using gadolinium gallium garnet (GGG) as the substrate, firstly, the gadolinium gallium garnet substrate was ultrasonically cleaned twice in deionized water, twice in acetone, twice in alcohol, and The cleaning time in deionized water, acetone, and alcohol is 10-15 minutes; then the substrate is placed in a mixture of concentrated sulfuric acid and nitric acid with a volume r...

Embodiment

[0030] The single crystal YIG garnet film of the present invention is prepared by liquid phase epitaxy, and the equipment used is a liquid phase epitaxy furnace, such as figure 1 shown. Among them, 1 is a motor; 2 is a GGG substrate; 3 is a heater; 4 is a crucible; 5 is a melt; 6 is a ceramic pulling rod; 7 is a rotating shaft.

[0031] The liquid phase epitaxy preparation method of a submicron low loss single crystal yttrium iron garnet film provided by the present invention specifically comprises the following steps:

[0032] Step 1, preparation of melt: with Y 2 o 3 , Fe 2 o 3 , PbO and B 2 o 3 As the raw material, the above-mentioned raw materials were accurately weighed, wherein, Y 2 o 3 , Fe 2 o 3 , PbO and B 2 o 3 The mass ratio is 0.486:10.315:87.45:1.748, carefully ground and mixed in an agate mortar, placed in a platinum crucible, melted at 1100°C for 24h, then stirred at 1000°C for 12h, mixed well, and then lowered the temperature to Growth temperature;...

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Abstract

The present invention provides a submicron-scale low-loss single-crystal yttrium-iron-garnet film liquid-phase epitaxy preparation method, and belongs to the field of electronic materials. According to the present invention, a liquid-phase epitaxy method is used to grow the submicron-scale low-loss single-crystal yttrium-iron-garnet film at the lowest temperature point in the growth temperature range of the single-crystal yttrium-iron-garnet film under a high rotation speed; and the submicron-scale low-loss single-crystal yttrium-iron-garnet film prepared by using the low growth temperature and high rotation speed method has the following characteristics that: the lattice constant and thermal expansion coefficient matching degree with the substrate is good, the film is in the single crystal state, the film thickness is 100-1000 nm, the ferromagnetic resonance line width is narrow and is about less than or equal to 3 Oe, and the film has characteristics of compact structure and smooth surface, and is the good material capable of being used for spin-logic devices.

Description

technical field [0001] The invention belongs to the field of electronic materials, and in particular relates to a liquid phase epitaxy preparation method of a submicron low-loss single crystal yttrium iron garnet thin film. Background technique [0002] Since the 1950s and 1960s, the rapid development of microwave devices has driven the demand for basic materials, making yttrium iron garnet single crystal thin films a major research hotspot. Yttrium iron garnet (YIG) thin films have the property of transmitting magnetostatic waves under the action of microwave and DC magnetic fields, and are widely used in magneto-optical devices and microwave gyromagnetic devices. In 2010, Japanese scholar Y.Kajiwara et.al reported in "Nature" that YIG materials can be used as ideal conductors for conducting spin waves, which caused a new upsurge in the application of YIG materials in the spin field. The study found that although the YIG material itself is an insulator, the spin current ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B19/10
Inventor 杨青慧饶毅恒张怀武田晓洁文岐业贾利军金曙晨梅兵
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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