Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ionic cathode buffer layer molecular material and its preparation method and application

A cathode buffer layer, ion-type technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of easy to be partially or completely washed off, limited application, and difficult to resist corrosion by weak polar solvents and other problems, to achieve good film shape stability, corrosion resistance, good alcohol solubility and solution processing performance

Inactive Publication Date: 2017-10-20
SOUTH CHINA UNIV OF TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most organic small molecule cathode interface materials are difficult to resist the erosion of weak polar solvents, that is, the active layer is easily washed off partially or completely when spin-coated, and its application in organic optoelectronic devices with inverted structures is limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ionic cathode buffer layer molecular material and its preparation method and application
  • Ionic cathode buffer layer molecular material and its preparation method and application
  • Ionic cathode buffer layer molecular material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The structural formula of the molecular material of the ionic cathode buffer layer in this embodiment is as follows:

[0051]

[0052] The preparation process of the molecular material of the ionic cathode buffer layer of this embodiment is as follows:

[0053] Step 1: Preparation of (2-bromo-6-naphthyl)diphenylphosphine (1)

[0054]

[0055] In N 2 Under the atmosphere, 2,6-dibromonaphthalene (3g, 10.5mmol) was dissolved in dry tetrahydrofuran (200mL) and cooled to -78°C. Add n-butyllithium (2.4M solution in hexane, 4.8 mL, 11.55 mmol) dropwise via a syringe. In N 2 Stir at this temperature for 40 minutes under the atmosphere, and then add diphenylphosphine chloride (2.3 mL, 12.6 mmol) via a syringe. The mixture slowly returns to room temperature, at N 2 Continue stirring overnight under the atmosphere. After the reaction is over, a small amount of ethanol is added to terminate the reaction, and after tetrahydrofuran is removed by distillation under reduced pressure, it is...

Embodiment 2

[0072] The structural formula of the molecular material of the ionic cathode buffer layer in this embodiment is as follows:

[0073]

[0074] The preparation process of the molecular material of the ionic cathode buffer layer of this embodiment is as follows:

[0075] Step 1: Preparation of (2-bromo-6-naphthyl)diphenylphosphine (1)

[0076]

[0077] In N 2 Under the atmosphere, 2,6-dibromonaphthalene (3g, 10.5mmol) was dissolved in dry tetrahydrofuran (200mL) and cooled to -78°C. Add n-butyllithium (2.4M solution in hexane, 4.8 mL, 11.55 mmol) dropwise through a syringe. In N 2 Stir at this temperature for 40 minutes under the atmosphere, and then add diphenylphosphine chloride (2.3 mL, 12.6 mmol) via a syringe. The mixture slowly returned to room temperature, at N 2 Continue stirring overnight under the atmosphere. After the reaction is over, a small amount of ethanol is added to terminate the reaction, and after tetrahydrofuran is removed by vacuum distillation, it is dissolved ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
energy conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

Disclosed is an ionic cathode buffer layer molecule type material, wherein an aryl phosphorus-oxygen group is introduced into an ammonium ion salt, such that not only are a relatively high alcohol solubility and an amorphous property obtained, but the solubility in a weakly polar solvent can also be reduced, thus resisting the erosion of the weakly polar solvent. Further disclosed are a preparation method and an application of the above-mentioned ionic cathode buffer layer molecule type material. Compared with the existing organic small molecule cathode buffer layer material, the ionic cathode buffer layer molecule type material of the present invention is suitable for applications of a "multilayer" solution processing inversion device structure.

Description

Technical field [0001] The invention relates to an alcohol-soluble cathode buffer layer material, in particular to an ionic cathode buffer layer molecular material and a preparation method and application thereof. Background technique [0002] Organic optoelectronic devices with inverted structures can avoid the use of low work function metals as cathodes, which is beneficial to improve device stability. Therefore, cathode buffer layer materials suitable for inverted optoelectronic devices are of great significance. [0003] Organic small molecule cathode interface materials have the advantages of definite chemical structure, high purity, and excellent synthesis and purification repeatability, and have very good applications in traditional organic optoelectronic devices. However, most organic small molecule cathode interface materials are difficult to resist the erosion of weakly polar solvents, that is, the active layer is easily washed away partially or completely when spin-coate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07F9/53C07F9/6561H01L51/54H01L51/46
CPCC07F9/53C07F9/6561
Inventor 朱旭辉谭婉怡李敏张建刘刚彭俊彪曹镛
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com