A Surface Enhanced Raman Scattering Substrate for THz Band Semiconductor Materials
A surface-enhanced Raman, semiconductor technology, applied in Raman scattering, material excitation analysis, metal material coating process, etc., to achieve the effect of simple operation, lower detection limit, and improved sensitivity
Inactive Publication Date: 2017-11-03
TIANJIN UNIVERSITY OF TECHNOLOGY
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The advantage of halide chemical vapor phase epitaxy is that it has a faster growth rate, but it is not suitable for growing quantum wells or superlattice structures.
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[0017] A surface-enhanced Raman scattering substrate for terahertz band semiconductor materials, such as figure 1 , 2 As shown, it consists of a graphene substrate 1 and a semiconductor lattice 2 periodically arranged on the graphene substrate. The graphene substrate 1 is a rectangular parallelepiped with a side length of 3 microns and a thickness of 0.03 microns; the material of the semiconductor lattice layer 2 is InP, The arrangement shape of the periodic lattice structure is square, the diameter of the particles constituting the semiconductor lattice is 0.6 microns, the height is 0.05 microns, and the center distance between two adjacent cylinders is 0.62 microns. The excitation light irradiates the entire substrate along a direction parallel to the substrate, and the excitation light source is a terahertz wave with a frequency band of 1THz to 10THz.
[0018] The method for preparing the surface-enhanced Raman scattering substrate of the terahertz band semiconductor material f...
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Abstract
A terahertz wave band semiconductor material surface enhanced Raman scattering substrate comprises a graphene substrate and semiconductor lattice in periodic arrangement on the graphene substrate, the graphene substrate is a cuboid with the length of 3 microns and thickness of 0.03 micron; a semiconductor lattice layer material is InP or InSb, the periodic lattice structure arrangement shape is square, the diameter of the semiconductor lattice particles is 0.6 micron, and the height is 0.05 to 0.1 micron. The advantage of the terahertz wave band semiconductor material surface enhanced Raman scattering substrate is that: through the arrangement of the periodic semiconductor lattice structure on the substrate surface to produce a strong surface enhanced Raman scattering signal, the sensitivity can be improved, the detection limit is lowered; the technology of arrangement of the semiconductor lattice structure on the substrate is a relatively mature technology in the semiconductor manufacturing process, so that the terahertz wave band semiconductor material surface enhanced Raman scattering substrate has the characteristics of low cost, simple process, easy operation, and good Raman signal enhancement effect and repeatability.
Description
Technical field [0001] The invention relates to the technical field of Raman spectroscopy molecular detection, in particular to a surface enhanced Raman scattering substrate of a terahertz waveband semiconductor material. Background technique [0002] The Indian physicist Raman discovered the inelastic scattering effect of light in 1928. Raman scattering. Monochromatic light is scattered on the surface of the molecule. A small part of the scattered light will exchange energy with the molecule. The wavelength of the spectrum is Will change, this kind of spectrum is Raman spectrum. The sharp peaks appearing in the spectrum characterize the molecular structure of chemical substances, and have the function of qualitative analysis and distinguishing similar substances, and thus are used as an effective method to identify unknown chemicals. The conventional Ramam scattering cross section is only 10% of the infrared and fluorescence process. -6 And 10 -14 This inherently low sensitivit...
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IPC IPC(8): G01N21/65B81C1/00
CPCG01N21/65
Inventor 任广军刘迎汪亚奇谭天波
Owner TIANJIN UNIVERSITY OF TECHNOLOGY