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Catalyst-free method for laterally growing nanowire mesh circuits

A technology of lateral growth and nanowire network, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of numerous steps, complicated preparation process, and poor control of the uniformity of nanometer network wire density, so as to save processes, cost reduction effect

Active Publication Date: 2018-06-26
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for laterally growing nanowire network circuits without a catalyst, which is used to solve the problem that the nanowire network prepared in the prior art is not only complicated in the preparation process, but also There are many steps, various additives are required, and the density and final uniformity of the nanowires are not well controlled during the production process.

Method used

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  • Catalyst-free method for laterally growing nanowire mesh circuits
  • Catalyst-free method for laterally growing nanowire mesh circuits
  • Catalyst-free method for laterally growing nanowire mesh circuits

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Embodiment 1

[0031] See figure 2 , a method for laterally growing a nanowire network circuit without a catalyst provided by the invention, the method at least includes the following steps:

[0032] Step S10, providing a silicon substrate with periodic nano-silicon columns prepared on the surface and a boat for containing chemical reactants;

[0033] Step S30, placing the side of the silicon substrate prepared with periodic nano-silicon columns facing the boat containing the chemical reactants;

[0034] Step S50 , using a high-temperature chemical vapor deposition method to prepare laterally grown zinc oxide nanowire networks at the corners of the sides of each nano-silicon pillar.

[0035] Specifically, in the above step S10, periodic nano-silicon pillars are prepared on a surface of the provided silicon substrate, and the periodic nano-silicon pillars are specifically a plurality of polygonal silicon pillars etched on the silicon substrate , the polygonal silicon pillars can be regular...

Embodiment 2

[0047] Further, in this embodiment, according to the method of the above-mentioned embodiment 1, a laterally grown zinc oxide nanowire network is prepared at the corners of the sides of each nano-silicon pillar. To make the zinc oxide nanowire network, the chemical reactants contained in the boat are zinc oxide powder and graphite powder, and nitrogen is used as the inert carrier gas, and then according to the preparation steps provided in the above-mentioned embodiment 1, Zinc oxide nanowire network can be prepared.

[0048] Preferably, in this embodiment, the volume flow ratio of the inert carrier gas and oxygen is set to 100:1.5, and the pressure of the nitrogen and oxygen atmosphere in the tube is kept at 300mbar, so that the zinc oxide nanowire network can be obtained quickly .

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Abstract

The invention provides a method of transversely growing a nanonet circuit without a catalyst, which can be applied to the field of semiconductors. The method comprises steps: 1) a silicon substrate whose surface is provided with periodic nano silicon pillars and a ship for accommodating chemical reactants are provided; 2) one face, provided with the periodic nano silicon pillars, of the silicon substrate is placed towards the ship for accommodating the chemical reactants; 3) a high-temperature chemical vapor deposition is adopted for preparing a transversely-growing zinc oxide nanonet at an edge corner of the side surface of each nano silicon pillar. The growing surface of the silicon electrode substrate whose surface is prepared with the periodic nano pillars is downwardly placed on the ship for accommodating chemical reactants, the transversely-growing zinc oxide nanonets are then controlled to form a nanonet bridge circuit, a gold-plating film does not need to serve as the catalyst, steps are saved, and the cost is reduced.

Description

technical field [0001] The invention relates to a method, in particular to a catalyst-free method for laterally growing nanowire network circuits. Background technique [0002] Scientific research shows that nanowire nets can improve the specific surface area and electrical properties of semiconductor materials, so the research on how to prepare nanowire nets is also constantly being studied. There are two main types of existing technologies for preparing nanowire networks: [0003] First, in the published document 1 (see the end of the article for details), a method for preparing a horizontal single-arm carbon nanotube network (Carbon nanotube nanonets) circuit by post-processing method is disclosed, which can be found in figure 1 , the method is to distribute the nanotubes on the surface of the silicon substrate of silicon dioxide, and then use the method of ultraviolet exposure photolithography to coat the metal film as the technical method of the gate, drain and gate el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76838
Inventor 陆文强何培培石彪冯双龙李昕王亮宋金会
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI