Method and device for preparing ultrahigh-vacuum spin-polarized scanning tunneling microscope probe

A technology of scanning tunneling and ultra-high vacuum, applied in scanning probe technology, scanning probe microscopy, measuring devices, etc., can solve the problems of increased difficulty of spin-polarized probes, and achieve spin-polarized scanning Tunneling microscopy, effect of low growth rate

Active Publication Date: 2015-09-02
SHAANXI NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since spin-polarized scanning tunneling microscopy measurements are usually carried out in an ultra-high vacuum environment, it is difficult to prepare spin-polarized probes.

Method used

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  • Method and device for preparing ultrahigh-vacuum spin-polarized scanning tunneling microscope probe

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Embodiment Construction

[0024] The device involved in the present invention includes: a tip frame of a scanning tunneling microscope probe; an electron beam heating ring; one or two molecular beam epitaxy evaporation sources for growing magnetic metal thin films; a crystal oscillator thickness gauge for real-time The thickness of film growth is monitored and controlled. The whole device can work in the environment of high vacuum and ultra-high vacuum. Specific examples figure 1 Shown: a needle tip holder 1, an electron beam heating ring 3, two molecular beam epitaxy evaporation sources, Gd evaporation source 5 and Fe evaporation source 6, the evaporation source is used to grow magnetic metal films, and the needle tip holder 1 is used to fix the needle tip 2 , the electron beam heating ring 3 is located at the upper end of the needle tip 2, the Gd evaporation source 5 and the Fe evaporation source 6 are installed toward the needle tip 2, and the needle tip holder 1, the needle tip 2, the electron bea...

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Abstract

The invention relates to field of material test instruments, and more specifically, relates to a method and a device for preparing an ultrahigh-vacuum spin-polarized scanning tunneling microscope probe. The whole scheme involves the step of high-temperature processing on the tip of a scanning tunneling microscope probe in ultrahigh vacuum to clean the tip and remove an oxide layer on the surface of the tip. On the basis, a magnetic metal film having the thickness of a plurality of atomic layers is formed on the top end of the tip through evaporation plating to achieve the function of spin-polarized current generation.

Description

technical field [0001] The invention relates to the field of material testing instruments, in particular to a method and device for preparing a spin-polarized scanning probe microscope probe under ultra-high vacuum. Background technique [0002] With the rapid increase of the storage density of magnetic storage media in recent years, the current technology has gradually reached the limit, which forces people to look for higher density storage media. With the increase of storage density, the internal magnetic structure of each storage unit and storage The magnetic arrangement configuration between units has attracted great attention of researchers. In order to further study and understand the micromagnetic properties of materials, such as the magnetic domain structure and the interaction between the shape of the sample and the magnetic domain structure, the atomic magnetic moment The arrangement in the low-dimensional system urgently needs a magnetic detection technology with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/16G01Q60/42G01Q70/18
Inventor 潘明虎
Owner SHAANXI NORMAL UNIV
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