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A preparation method of high photocurrent pb(zr0.52-x, cox, ti0.48)o3-δ thin film

A current generation and thin film technology, which is applied in the field of ferroelectric thin film material preparation, can solve the problems of small photoelectric current and low photoelectric conversion ability of lead zirconate titanate

Active Publication Date: 2018-04-24
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a high photoelectric current Pb(Zr 0.52-x ,Co x , Ti 0.48 )O 3-δ Film Preparation Method

Method used

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  • A preparation method of high photocurrent pb(zr0.52-x, cox, ti0.48)o3-δ thin film
  • A preparation method of high photocurrent pb(zr0.52-x, cox, ti0.48)o3-δ thin film
  • A preparation method of high photocurrent pb(zr0.52-x, cox, ti0.48)o3-δ thin film

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specific Embodiment approach 1

[0015] Specific embodiment 1: This embodiment has high photocurrent Pb(Zr 0.52-x , Co x , Ti 0.48 )O 3-δ The preparation method of the film is realized by the following steps:

[0016] 1. The molar ratio is (1~1.15): 0.48: (0.52-x): x Weigh lead acetate, tetrabutyl titanate, zirconium propoxide and cobalt nitrate as raw materials;

[0017] 2. Add the lead acetate in the raw materials to ethylene glycol methyl ether, heat and stir uniformly to obtain a mixed solution. After the mixed solution is cooled to room temperature, add tetrabutyl titanate, zirconium propoxide and cobalt nitrate, and stir for 15-25 minutes. Add ethylene glycol methyl ether to obtain Pb(Zr 0.52-x , Co x , Ti 0.48 )O 3-δ Precursor sol

[0018] 3. The Pb(Zr 0.52-x , Co x , Ti 0.48 )O 3-δ The precursor sol is dropped on the substrate, and the substrate surface is evenly coated and placed on a homogenizer for homogenization treatment to obtain a wet film. The wet film is placed on a hot plate furnace at 420-460°C fo...

specific Embodiment approach 2

[0021] Specific embodiment two: This embodiment is different from specific embodiment one in that the concentration of lead acetate in the mixed solution described in step two is 0.4-0.7 mol / L. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0022] Specific embodiment three: This embodiment is different from specific embodiment one or two in that in step three, the wet film is placed on a hot plate furnace at 450° C. for pre-burning for 3 minutes. Other steps and parameters are the same as those in the first or second embodiment.

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Abstract

A kind of preparation method of high photogenerated electric current Pb (Zr0.52-x, Cox, Ti0.48) O3-δ thin film, the present invention relates to a kind of preparation method of ferroelectric thin film material, it is in order to solve existing lead zirconate titanate thin film The photogenerated current is small and the photoelectric conversion ability is low. The method of preparing the film: 1. Weigh the raw materials; 2. Dissolve the raw materials lead acetate, tetrabutyl titanate, zirconium propoxide and cobalt nitrate in ethylene glycol methyl ether to prepare a precursor sol; 3. Drop the precursor sol On the substrate, the amorphous thin film is obtained through the process of dropping glue-throwing film-pre-burning for many times; Fourth, the amorphous thin film is placed in an annealing furnace for annealing treatment, and the preparation of the ferroelectric thin film is completed. The invention adopts the method of doping the transition element Co to increase the value of the photogenerated current, and the maximum photogenerated current of the Pb (Zr0.52-x, Cox, Ti0.48) O3-δ thin film can reach 2×10-2uA.

Description

Technical field [0001] The invention relates to a method for preparing a ferroelectric thin film material. Background technique [0002] The biggest difficulty facing mankind in the 21st century is the declining non-renewable energy sources and the increasing environmental pollution. Therefore, people have turned their attention to renewable energy-solar energy. Solar photovoltaic cells mainly include silicon, copper indium gallium selenium (CIGS), dye sensitization, and polymers. Silicon-based photovoltaic cells have been produced on a large scale, but their photoelectric conversion mechanism determines that only light with energy exceeding the band gap can generate current. This leads to the problem of solar energy conversion: a small band gap can absorb more photons and generate a larger current. The voltage is insufficient, and the large band gap can generate a larger voltage but the current is limited, most of the solar photons cannot be absorbed, so the conversion efficie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08
Inventor 孙秋李飞宋英辛铁柱刘志锴
Owner HARBIN INST OF TECH