Transverse epitaxial growth method for double buffer layers for improving brightness of LED (Light Emitting Diode)

Abstract

The invention discloses a transverse epitaxial growth method for double buffer layers for improving the brightness of an LED (Light Emitting Diode). The method comprises the following steps: 1) growing a first AlxGa1-xN buffer layer at a low temperature by using conical PSS (Polysaccharide Sulfate) as a growth substrate, wherein 0<=x<=1; 2) growing a first U-GaN layer with hexagonal conical array micro pits at a high temperature; 3) performing high-temperature annealing in an NH3 environment, then cooling to a low temperature, and growing a second low-temperature AlxGa1-xN buffer layer; 4) growing a second U-GaN layer at a high temperature to completely cover the hexagonal conical array micro pits of the first U-GaN layer, and forming cavities at the micro pits; 5) sequentially growing a SiH4-doped n-GaN layer, a multi-quantum well active layer, a doped p-type AlGaN barrier layer and a doped p-type GaN layer; and 6) annealing in nitrogen. According to the method, a layer of hexagonal conical array micro pits is grown on the sapphire substrate, and the buffer-2 is grown on the GaN in the area, namely GaN is grown on the GaN substrate, so that crystal nuclei with fewer defects, lower internal stress and lower crystal orientation difference can be obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor electronic information, in particular to a new LED epitaxial growth method. Background technique [0002] GaN-based LED light-emitting diodes have become the third generation of high-efficiency solid-state light sources after incandescent lamps and energy-saving lamps due to their long service life, strong safety and reliability, energy saving and environmental protection. LEDs have been widely used in traffic lights, automobile tail lights, and advertising displays. Video screen, mobile phone TV backlight and white lighting field, the application prospect is very broad. At present, MOCVD equipment is mostly used to grow GaN-based LEDs on sapphire substrates. However, there is a large mismatch (16%) in the lattice constants of sapphire substrates and GaN materials, resulting in up to 10% of the GaN epitaxial film. 9- 10 10 cm –2 High linear dislocation density, high linear dislocation density will ...

AI Technical Summary

Problems solved by technology

However, the traditional lateral epitaxy method has complex process, time-consuming secondary epitaxy process and easy to cause secondary contamination of samples during operation, so it has not been effectively used in industrial production.

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