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Method for preparing carbon nitride/ titanium dioxide heterojunction photocatalyst in one-step electrostatic spinning way

The invention belongs to the technical field of photocatalysts for degrading organic sewage, and specifically relates to a method for preparing a carbon nitride / titanium dioxide heterojunction photocatalyst in one-step electrostatic spinning way. The heterojunction photocatalyst is prepared in the one-step electrostatic spinning way, wherein the one-step electrostatic spinning way specifically comprises the following steps: adding melamine or guanidine hydrochloride or urea to a mixed solution containing glacial acetic acid, tetrabutyl titanate, polyvinylpyrrolidone and an organic solvent; then performing the electrostatic spinning technology and the high-temperature sintering treatment to obtain the carbon nitride / titanium dioxide heterojunction photocatalyst. The prepared photocatalyst is outstanding in heterojunction and outstanding in performance of photocatalyzing degrading the organic sewage; the preparation technology of the carbon nitride / titanium dioxide heterojunction photocatalyst is simplified; the technology is simple; the time is saved. Therefore, the method has a good application prospect in organic sewage treatment.
Owner:WUHAN POLYTECHNIC UNIVERSITY

Biological enzyme desizing enzyme wash-bath process of pure cotton and cotton-containing type blended denim clothing

The invention relates to a biological enzyme desizing enzyme wash-bath process of pure cotton and cotton-containing type blended denim clothing. The process comprises the following steps: (1) performing desizing enzyme wash-bath: adding the denim clothing into an industrial washing machine, adding water, heating the water to 40-50 DEG C, adding desizing enzyme wash-bath enzyme into the industrial washing machine, controlling the pH value of the solution to be 6.0-8.0, opening the industrial washing machine, preserving the heat and rotating for 30-90 minutes, discharging the solution and washing for two times with clear water; (2) neutralizing with a reducing agent: adding the clothing on which monkey is sprayed into the industrial washing machine, adding water, heating the water to 25-40 DEG C, adding the reducing agent into the industrial washing machine, controlling the pH value of the solution to be 5.0-7.0, controlling the total hardness of water of the solution to be 70-150 ppm, opening the industrial washing machine, preserving the heating and rotating for 5-20 minutes, discharging the solution and cleaning for 1-2 times with clear water. Compared with the prior art, the process has the advantages that the process is time-saving, simple, easy to control and rational, no toxic or harmful substance is produced, the production efficiency is obviously improved, the product quality is more stable, and the production comprehensive cost is greatly reduced.
Owner:FIBER CHEM BIOLOGICAL CHEM

Heating furnace upright post cofferdam internal mold and making method thereof

The invention discloses a heating furnace upright post cofferdam internal mold. The cofferdam internal mold is axially provided with a through hole through which a movable upright post passes, and the cofferdam internal mold comprises a pair of cofferdam internal mold members in a size which is half of the cofferdam internal mold. The cofferdam internal mold is characterized in that: the cofferdam internal mold members are made of expanded polystyrene. A making method of the heating furnace upright post cofferdam internal mold comprises the following steps of: 1) making a pair of sample plates in a size which is half of the section of the cofferdam internal mold; 2) making an expanded polystyrene board into a preformed block, the height of which is equal to that of the cofferdam internal mold and the section of which is greater than or equal to half of the section of the cofferdam internal mold; and 3) tidily putting the pair of sample plates made in the step 1) on two sections of the preformed block in parallel, cutting the preformed block along the outlines of the pair of sample plates to obtain the cofferdam internal mold members in a size which is half of the cofferdam internal mold, and thus forming the heating furnace upright post cofferdam internal mold by using the pair of cofferdam internal mold members. The cofferdam internal mold is convenient and fast for supporting, simple in making and low in cost.
Owner:CHINA FIRST METALLURGICAL GROUP

Transverse epitaxial growth method for double buffer layers for improving brightness of LED (Light Emitting Diode)

The invention discloses a transverse epitaxial growth method for double buffer layers for improving the brightness of an LED (Light Emitting Diode). The method comprises the following steps: 1) growing a first AlxGa1-xN buffer layer at a low temperature by using conical PSS (Polysaccharide Sulfate) as a growth substrate, wherein 0<=x<=1; 2) growing a first U-GaN layer with hexagonal conical array micro pits at a high temperature; 3) performing high-temperature annealing in an NH3 environment, then cooling to a low temperature, and growing a second low-temperature AlxGa1-xN buffer layer; 4) growing a second U-GaN layer at a high temperature to completely cover the hexagonal conical array micro pits of the first U-GaN layer, and forming cavities at the micro pits; 5) sequentially growing a SiH4-doped n-GaN layer, a multi-quantum well active layer, a doped p-type AlGaN barrier layer and a doped p-type GaN layer; and 6) annealing in nitrogen. According to the method, a layer of hexagonal conical array micro pits is grown on the sapphire substrate, and the buffer-2 is grown on the GaN in the area, namely GaN is grown on the GaN substrate, so that crystal nuclei with fewer defects, lower internal stress and lower crystal orientation difference can be obtained.
Owner:西安明德理工学院

Process for after-finishing biological enzymes of ramie yarn and bast fiber cloth

The invention relates to a process for after-finishing biological enzymes of ramie yarn and bast fiber cloth. The process comprises the following steps of: (1) placing a composite enzyme ingredient in a material cylinder, controlling the pH value, raising the temperature to 50 to 60 DEG C and running the cloth under a liquid level for 30 to 60 minutes; (2) guiding the solution to a main cylinder, controlling the pH value, raising the temperature to 50 to 60 DEG C, running the cloth under the liquid level for 30 to 60 minutes, raising the temperature to 70 to 85 DEG C and running the cloth under the liquid level for 10 to 20 minutes; and (3) placing a film-forming ingredient in the main cylinder, controlling the pH value, raising the temperature to 50 to 60 DEG C to obtain the solution and running the cloth under the liquid level for 30 to 60 minutes. Compared with the prior art, the process for after-finishing the biological enzymes of the ramie yarn and the bast fiber cloth saves energy consumption, simplifies a technological process, prevents the production of toxic substances, remarkably enhances the product quality, achieves a top-quality product rate of over 98 percent and greatly reduces the production cost.
Owner:上海龙之杰企业发展有限公司 +2

Laminating method of thin-film display and flexible circuit board, and laminating device thereof

The invention discloses a laminating method of a thin-film display and a flexible circuit board, and a laminating device thereof. A hollow channel is arranged at one side of a porous sorption platformof the laminating device, and a thin-film display is adsorbed at the top of the porous sorption platform through a sorption plane, and a working platform is arranged at the outside of the porous sorption platform of the adjacent channel and used for placing the flexible circuit board, so that one butt-joint side of the flexible circuit board extends to above one signal transmission side of the thin-film display, and anisotropic conductive adhesive is arranged between the signal transmission side and the butt-joint side, namely, thermal pressurizing modules at the upper side and the lower sideof the channel at one side of the porous sorption platform are respectively propped against the butt-joint side and the signal transmission side by using an upper pressurizing head and a lower pressurizing head, thereby heating and laminating the anisotropic conductive adhesive, and achieving the aim of performing thermal lamination at the same or different temperature by adjusting the upper pressurizing head and the lower pressurizing head.
Owner:USUN TECH CO LTD

Product by spraying with high molecular materials by dry method and glazing at low temperature and production process thereof

The invention provides a product by spraying with high molecular materials by a dry method and glazing at low temperature and a production process thereof. The product is obtained by spraying with glazing powder by a dry method and glazing at low temperature on surface of a balled iron blank. The glazing powder is made from the following parts of raw materials by weight: substrate materials: 30-50 parts of resin, 2-8 parts of silicon dioxide and 10-20 parts of titanium dioxide; auxiliary materials: 2-9 parts of stainless steel powder, 3-8 parts of iron powder, 2-7 parts of calcium carbonate and 5-12 parts of magnesium carbonate; and additives: 0.5-3.5 parts of a curing accelerator, 1-3 parts of a leveling agent, 1-3 parts of a colorant, 1-3 parts of a luster-enhancing agent and 1-3 parts of an anticorrdant. The production process thereof comprises the following steps: fabricating the balled iron blank, pickling, degreasing, surface conditioning, phosphating, spraying by the dry method, pyrographing, spraying with fluorescent liquid and adding a steel ring to obtain a finished product. The sintering temperature of the production process is 160-200 DEG C, porcelain surface of the product is flat and smooth and is bright like a mirror, and rich in designs and colors; avoids porcelain shedding during collision and beating, and has long service life.
Owner:河南金丹搪瓷有限公司

Method for extracting superoxide dismutase from cattle and sheep blood largly industrially and blade type agitator applied to same

The invention discloses a method for extracting superoxide dismutase from cattle and sheep blood largly industrially, comprising the following steps of: carrying out the production steps of anticoagulation, hypotonic hemolysis, ultrafiltration, fast temperature rise and reduction, sedimentation, three-stage temperature treatment, salting-out, ultrafiltration, concentration, freeze drying, and the like on fresh cattle or sheep blood so as to simultaneously obtain two groups of superoxide dismutase finished products which are slightly different in specific activity and purity, wherein the fast temperature rise and reduction is realized through an agitator with a heat / cold source; the first-stage temperature treatment is carried out at 45-55 DEG C, the second-stage temperature treatment is carried out at 55-60 DEG C, and the third-stage temperature treatment is carried out at 60-65 DEG C. Compared with the prior art, the invention has the advantages of simple process, short production period, high yield coefficient and specific activity of the products, stable quality, low cost, excellent economic benefit, and the like.
Owner:云南光华亚南生物科技有限公司

Bio-enzymatic desizing and fermentation one-bath process of pure cotton and cotton-containing blended denim garments

The invention relates to a biological enzyme desizing enzyme wash-bath process of pure cotton and cotton-containing type blended denim clothing. The process comprises the following steps: (1) performing desizing enzyme wash-bath: adding the denim clothing into an industrial washing machine, adding water, heating the water to 40-50 DEG C, adding desizing enzyme wash-bath enzyme into the industrial washing machine, controlling the pH value of the solution to be 6.0-8.0, opening the industrial washing machine, preserving the heat and rotating for 30-90 minutes, discharging the solution and washing for two times with clear water; (2) neutralizing with a reducing agent: adding the clothing on which monkey is sprayed into the industrial washing machine, adding water, heating the water to 25-40 DEG C, adding the reducing agent into the industrial washing machine, controlling the pH value of the solution to be 5.0-7.0, controlling the total hardness of water of the solution to be 70-150 ppm, opening the industrial washing machine, preserving the heating and rotating for 5-20 minutes, discharging the solution and cleaning for 1-2 times with clear water. Compared with the prior art, the process has the advantages that the process is time-saving, simple, easy to control and rational, no toxic or harmful substance is produced, the production efficiency is obviously improved, the product quality is more stable, and the production comprehensive cost is greatly reduced.
Owner:FIBER CHEM BIOLOGICAL CHEM

A double buffer layer lateral epitaxial growth method for improving LED brightness

InactiveCN104900774BReduce dislocationReduce orientation differencesSemiconductor devicesQuantum wellSulfate
The invention discloses a transverse epitaxial growth method for double buffer layers for improving the brightness of an LED (Light Emitting Diode). The method comprises the following steps: 1) growing a first AlxGa1-xN buffer layer at a low temperature by using conical PSS (Polysaccharide Sulfate) as a growth substrate, wherein 0<=x<=1; 2) growing a first U-GaN layer with hexagonal conical array micro pits at a high temperature; 3) performing high-temperature annealing in an NH3 environment, then cooling to a low temperature, and growing a second low-temperature AlxGa1-xN buffer layer; 4) growing a second U-GaN layer at a high temperature to completely cover the hexagonal conical array micro pits of the first U-GaN layer, and forming cavities at the micro pits; 5) sequentially growing a SiH4-doped n-GaN layer, a multi-quantum well active layer, a doped p-type AlGaN barrier layer and a doped p-type GaN layer; and 6) annealing in nitrogen. According to the method, a layer of hexagonal conical array micro pits is grown on the sapphire substrate, and the buffer-2 is grown on the GaN in the area, namely GaN is grown on the GaN substrate, so that crystal nuclei with fewer defects, lower internal stress and lower crystal orientation difference can be obtained.
Owner:西安明德理工学院
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