38results about How to "Craft time saving" patented technology

The invention relates to a biological enzyme desizing enzyme wash-bath process of pure cotton and cotton-containing type blended denim clothing. The process comprises the following steps: (1) performing desizing enzyme wash-bath: adding the denim clothing into an industrial washing machine, adding water, heating the water to 40-50 DEG C, adding desizing enzyme wash-bath enzyme into the industrial washing machine, controlling the pH value of the solution to be 6.0-8.0, opening the industrial washing machine, preserving the heat and rotating for 30-90 minutes, discharging the solution and washing for two times with clear water; (2) neutralizing with a reducing agent: adding the clothing on which monkey is sprayed into the industrial washing machine, adding water, heating the water to 25-40 DEG C, adding the reducing agent into the industrial washing machine, controlling the pH value of the solution to be 5.0-7.0, controlling the total hardness of water of the solution to be 70-150 ppm, opening the industrial washing machine, preserving the heating and rotating for 5-20 minutes, discharging the solution and cleaning for 1-2 times with clear water. Compared with the prior art, the process has the advantages that the process is time-saving, simple, easy to control and rational, no toxic or harmful substance is produced, the production efficiency is obviously improved, the product quality is more stable, and the production comprehensive cost is greatly reduced.

The invention relates to a process for after-finishing biological enzymes of ramie yarn and bast fiber cloth. The process comprises the following steps of: (1) placing a composite enzyme ingredient in a material cylinder, controlling the pH value, raising the temperature to 50 to 60 DEG C and running the cloth under a liquid level for 30 to 60 minutes; (2) guiding the solution to a main cylinder,controlling the pH value, raising the temperature to 50 to 60 DEG C, running the cloth under the liquid level for 30 to 60 minutes, raising the temperature to 70 to 85 DEG C and running the cloth under the liquid level for 10 to 20 minutes; and (3) placing a film-forming ingredient in the main cylinder, controlling the pH value, raising the temperature to 50 to 60 DEG C to obtain the solution andrunning the cloth under the liquid level for 30 to 60 minutes. Compared with the prior art, the process for after-finishing the biological enzymes of the ramie yarn and the bast fiber cloth saves energy consumption, simplifies a technological process, prevents the production of toxic substances, remarkably enhances the product quality, achieves a top-quality product rate of over 98 percent and greatly reduces the production cost.

The invention discloses a transverse epitaxial growth method for double buffer layers for improving the brightness of an LED (Light Emitting Diode). The method comprises the following steps: 1) growing a first AlxGa1-xN buffer layer at a low temperature by using conical PSS (Polysaccharide Sulfate) as a growth substrate, wherein 0<=x<=1; 2) growing a first U-GaN layer with hexagonal conical array micro pits at a high temperature; 3) performing high-temperature annealing in an NH3 environment, then cooling to a low temperature, and growing a second low-temperature AlxGa1-xN buffer layer; 4) growing a second U-GaN layer at a high temperature to completely cover the hexagonal conical array micro pits of the first U-GaN layer, and forming cavities at the micro pits; 5) sequentially growing a SiH4-doped n-GaN layer, a multi-quantum well active layer, a doped p-type AlGaN barrier layer and a doped p-type GaN layer; and 6) annealing in nitrogen. According to the method, a layer of hexagonal conical array micro pits is grown on the sapphire substrate, and the buffer-2 is grown on the GaN in the area, namely GaN is grown on the GaN substrate, so that crystal nuclei with fewer defects, lower internal stress and lower crystal orientation difference can be obtained.

The invention discloses a method for growing and preparing aluminium borate whisker / aluminium composite powder on aluminium powder surface in situ, belonging to the technology of ceramic whisker / metal composite powder materials. The method process comprises the following steps: adding aluminium powder and boric acid powder by mass into a stainless steel jar to be subjected to ball milling to prepare ball milling pre-prepared mixed powder; spreading the ball milling pre-prepared mixed powder in an alumina boat; putting the alumina ark into a quartz heating furnace; and under the protection ofargon, calcining at the temperature of 650-800 DEG C to prepare the product of aluminium borate whisker / aluminium composite powder. The method has the advantage of simple technology and is easy to realize mass production; the size of aluminium borate whisker growing in the aluminite powder matrix is even, and the aluminium borate whisker has favourable associativity with the aluminite powder matrix.

The invention relates to a lamination method and lamination device of a thin film display and a flexible circuit board. The porous adsorption platform of the lamination device is provided with a hollow channel on one side, and the top absorbs the thin film display through the adsorption plane, and The outer side of the porous adsorption platform of the adjacent channel is provided with a working platform for placing the flexible circuit board, so that the docking side of the flexible circuit board extends to the top of the signal transmission side on the side of the film display, and then on the signal transmission side, docking The anisotropic conductive adhesive is set between the sides, that is, the upper and lower pressure heads of the thermal pressurization module on the upper and lower channels of the adsorption platform are respectively held against the docking side and the anisotropy on the signal transmission side by using porosity. The conductive adhesive is heated and pressed to achieve the purpose of adjusting the upper pressure head and the lower pressure head to perform heat and pressure at the same or different temperatures.

The invention discloses a method for preparing carbon nanotube / magnesium composite powder by nickel catalytic in-situ chemical vapor deposition, and the process of the method comprises the following steps: adding nickel nitrate hexahydrate and magnesium powder into anhydrous ethanol, and preparing a precursor of a nickel / magnesium catalyst through the thermal decomposition method; and placing theprecursor of the nickel / magnesium catalyst in a quartz reaction tube, increasing the temperature to the reduction temperature under the protection of argon, introducing hydrogen for reduction, and then taking methane as carbon source gas and taking the argon as carrier gas for preparing the carbon nanotube / magnesium composite powder by using the chemical vapor deposition method at the growth temperature. The method has simple and time-saving process, the in-situ growth on the carbon nanotube / magnesium powder has good dispersion, and a carbon nanotube further has narrow tube diameter and uniform size, thereby being particularly applicable to preparing carbon nanotube-reinforced magnesium matrix composites.