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78results about How to "Difficult to penetrate" patented technology

Composite distillation film and preparation method and application thereof

The invention relates to a composite distillation membrane, as well as the method and the application thereof. The composite distillation membrane is characterized in that the composite distillation membrane is a flat membrane, and is in double-layer structure; one layer is a functional finished textile support body; and the other layer is a composite hydrophobic polymer microporous film coated on the textile support body which is 5 to 100 Mu m thick; the textile support body is made of one of filament woven fabrics of fiber such as Dacron, nylon, polypropylene fiber or mucilage and so on, or non-woven fabrics with the weight ranging from 30g/m<2> to 250g/m<2>; the function finish is at least one of water repellent finish, three-proofing finish, chitosan finish, pva and citric acid finish; the fracture strength of the composite distillation membrane ranges from 400N/5cm to 800N/5cm; the peel strength of the composite distillation membrane ranges from 15cN/cm to 30cN/cm; and the vapour transfer rate ranges from 6kg/m<2>*24h to 9kg/m<2>*24h. During the distillation of the membrane, the textile support body of the composite distillation membrane touches feed liquid. The composite distillation membrane can resist pollution well and is applicable for various membrane distillation processes.
Owner:TIANJIN POLYTECHNIC UNIV

Back side dampproof and impervious structure of indoor wall of building

The invention discloses a back side dampproof and impervious structure of an indoor wall of a building. The structure is composed of a base material layer, a dampproof surface layer and a decoration surface layer. The base material layer is a concrete base face or a cement mortar screeding layer. The decoration surface layer is coatings or wallpaper or wall cloth or a decoration panel or tile stone and the like. The dampproof surface layer is made of one or more layers of inorganic scale water-borne epoxy resin coatings. The inorganic scale water-borne epoxy resin coatings are composed of first components and second components, and the first components are epoxy resin dispersoid and comprise, by weight, 60 percent to 80 percent of bisphenol low molecular weight liquid epoxy resin, five percent to ten percent of reactive diluents, 0.2 percent to 1.0 percent of dispersing agents A, 0.05 percent to 0.1 percent of antifoaming agents A, 0.2 percent to 0.8 percent of non-ionic surface active agents, 0.1 percent to 0.2 percent of sinking preventing agents, eight percent to 40 percent of physical face packing and five percent to 20 percent of inorganic scale materials. The second components are hydrophilic waterborne curing agent dispersoid and comprise, by weight, 43 percent to 65 percent of modified aqueous amine curing agents, 34 percent to 60 percent of water, 0.2 percent to 0.4 percent of dispersing agents B, 0.2 percent to 0.5 percent of antifoaming agents B and 0.2 percent to 0.8 percent of flatting agents.
Owner:HAINAN SEQUOIA CREATION

Wall surface wooden furniture moisture-resistant and termite-resistant structure

The present invention discloses a wall surface wooden furniture moisture-resistant and termite-resistant structure, which comprises a substrate layer, a wooden furniture attachment wall surface, and a moisture-resistant and termite-resistant coating positioned between the substrate layer and the wooden furniture attachment wall surface, wherein the substrate layer is a concrete or cement mortar floor, and the moisture-resistant and termite-resistant coating is prepared by adopting one or plural layers of termite-resistant inorganic flake aqueous epoxy resin coating materials, wherein the termite-resistant inorganic flake aqueous epoxy resin coating material comprises a component A and a component B, wherein the component A comprises, by weight, 60-80% of a bisphenol low molecular weight liquid epoxy resin, 4.5-10% of an active diluent, 0.2-1.0% of a dispersant, 0.05-0.1% of an antifoaming agent, 0.2-0.8% of a non-ionic surfactant, 0.1-0.2% of an anti-settling agent, 8-30% of an extender pigment filler, 0.5-15% of an insecticide-containing microcapsule particle dispersing suspension aqueous emulsion, and 5-20% of an inorganic flake material, and the component B comprises, by weight, 39-65% of a modified aqueous amine curing agent, 34-60% of water, 0.2-0.4% of a dispersing agent, 0.2-0.5% of an antifoaming agent, and 0.2-0.8% of a leveling agent.
Owner:HAINAN SEQUOIA CREATION

Anti-ferroelectric-paraelectric material coupled capacitor dielectric and preparation method therefor

InactiveCN106531442AEnergy storage densityPlay the role of isolating chargeFixed capacitor dielectricSecondary layerEnergy storage efficiency
The invention discloses an anti-ferroelectric-paraelectric material coupled capacitor dielectric and a preparation method therefor. The anti-ferroelectric-paraelectric material coupled capacitor dielectric is formed by anti-ferroelectric PLZT and paraelectric STO which are distributed at intervals; the preparation method comprises the following steps of preparing PLZT sol and STO sol; uniformly performing spin coating on a Pt/Si substrate with the PLZT sol or the STO sol by a spin coater to obtain a first coating film layer; performing drying and annealing to obtain a first coating layer; performing spin coating on the first coating layer with the STO sol or the PLZT sol by the spin coater to obtain a second coating film layer; performing drying and annealing to obtain a second coating layer; and alternately performing the spin coating and annealing processes of the PLZT sol and the STO sol to obtain the anti-ferroelectric-paraelectric material coupled capacitor dielectric which is formed by anti-ferroelectric PLZT and paraelectric STO that are distributed at intervals. By virtue of the anti-ferroelectric PLZT-paraelectric STO coupling structure, the shortcoming of the poor voltage resistance of the pure anti-ferroelectric PLZT is effectively overcome, and the energy storage density and the energy storage efficiency of the capacitor dielectric are improved.
Owner:SOUTH CHINA NORMAL UNIVERSITY

Preparation method of low-cost paper environment-friendly take-out meal box

The invention provides a preparation method of a low-cost paper environment-friendly take-out meal box, and relates to the field of meal box materials, and the preparation method comprises the following steps: preparing wheat straw fibers; preparing ramie fibers; preparing hard cloth; adding waste corrugated paper into a crusher; crushing for 30-50 minutes at the speed of 2,000-2,500 r/min to obtain corrugated paper powder; soaking the corrugated paper powder in water for 25-30 hours; adding rice straw powder, calcium carbonate and starch; mechanically stirring at 1200-1500r/min for 2-5h, andadjusting the pH value of the system to 10 by using a sodium hydroxide solution to obtain thick slurry; heating and raising the temperature to 40 to 50 DEG C; soaking the hard cloth for 5 to 10min andthen fishing out the hard cloth; drying at the temperature of 70-80 DEG C to obtain sheets, taking a plurality of sheets for hot press molding to obtain a meal box body, adhering a layer of high-temperature-resistant film to the inner surface of the meal box body, and heating and curing at the temperature of 50-60 DEG C. According to the paper environment-friendly take-out meal box, the excellent mechanical property, heat resistance and water resistance of the meal box can be guaranteed while the low cost is guaranteed.
Owner:安徽硕通网络科技有限公司

Manufacturing method of semiconductor device

PendingCN112563286AGuaranteed electrical performanceAvoid the phenomenon that the size is enlargedSolid-state devicesSemiconductor devicesEtchingDevice material
The invention provides a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps: providing a substrate with a first stacking structure on a surface, forming a plurality of first channel through holes penetrating through the first stacking structure to a substrate, and forming a first filling layer in each first channel through hole; forming a first gate isolation groove penetrating through the first stack structure to the substrate, enabling the first gate isolation groove to be located between the adjacent first channel through holes, and forming a second filling layer in the first gate isolation groove; forming a second stacking structure on the first stacking structure, forming a second channel through hole penetrating through the second stacking structure to the first filling layer, and removing the first filling layer to enable the second channel through hole to be connected with the first channel through hole; and forming a second gate isolation groove penetrating through the second stack structure to the second filling layer, and removing the second filling layer to enable the second gate isolation groove to be connected with the first gate isolation groove. The step-by-step etching of the gate isolation groove can better control an etching key size, and the electrical performance of the device is ensured.
Owner:YANGTZE MEMORY TECH CO LTD
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