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Infrared organic photosensitive diode based on exciplex photosensitive layer

An excimer complex and photodiode technology, which is applied in the field of infrared organic photodiode manufacturing and can solve the problems of infrared photosensitive difficulty and the like

Inactive Publication Date: 2015-09-16
LANZHOU UNIVERSITY
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Since the bandgap of existing organic photosensitive materials is mostly around 2.0eV, it is difficult to realize infrared photosensitive

Method used

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  • Infrared organic photosensitive diode based on exciplex photosensitive layer
  • Infrared organic photosensitive diode based on exciplex photosensitive layer
  • Infrared organic photosensitive diode based on exciplex photosensitive layer

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Embodiment Construction

[0009] The glass coated with indium tin oxide (ITO) transparent conductive film is used as the substrate, and it also serves as a transparent anode; 1`-biphenyl)-4,4`-hydrazine (NPB) is the p-type exciton blocking layer, neodymium phthalocyanine (NdPc): fullerene (C60) is the exciplex photosensitive layer, 2,9 -Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is an n-type exciton blocking layer, and Al is the present invention of the cathode, and its preparation process is as follows:

[0010] a) Clean the ITO glass substrate with a standard process;

[0011] b) Prepare a layer of NPB p-type exciton blocking layer on ITO by vacuum evaporation method;

[0012] c) Preparation of NdPc:C60 exciplex photosensitive layer on NPB by vacuum co-evaporation method

[0013] d) Prepare a BCP n-type exciton blocking layer on the NdPc:C60 film by vacuum evaporation;

[0014] e) Prepare Al thin film as cathode in BCP by vacuum evaporation method;

[0015] f) Packaging of the fabricated dev...

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Abstract

The invention discloses a design and manufacturing method for an infrared organic photosensitive diode based on an exciplex photosensitive layer. The infrared organic photosensitive diode consists of a transparent substrate, a transparent anode, a p-type exciton barrier layer, the exciplex photosensitive layer, an n-type exciton barrier layer and a cathode. The transparent substrate, the transparent anode, the p-type exciton barrier layer, the exciplex photosensitive layer, the n-type exciton barrier layer and the cathode are successively arranged from bottom to top. The exciplex photosensitive layer is composed of a hybrid thin film formed by one kind of donor molecules and another kind of acceptor molecules capable of forming an exciplex or multiple stacked donor-acceptor planar heterojunctions.

Description

technical field [0001] The invention relates to a method for manufacturing an infrared organic photosensitive diode based on an exciplex photosensitive layer, and belongs to the technical field of solid electronic devices. Background technique [0002] Most organic semiconductor materials belong to the single-carrier transport type, that is, their mobility for one kind of carrier is much greater than that for another kind of carrier. Generally, materials whose electron mobility is much greater than hole mobility are called electron transport materials, referred to as n-type materials, and materials whose hole mobility is much greater than electron mobility are called hole transport materials, referred to as p-type materials. type material. In organic semiconductors, electrons are transported on the lowest unoccupied molecular orbital (LUMO), while holes are transported on the highest occupied molecular orbital (HOMO). [0003] Compared with inorganic photodiodes, organic p...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46
CPCY02E10/549
Inventor 彭应全郑挺才吕文理张建萍
Owner LANZHOU UNIVERSITY
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