Preparation method for zinc arsenide

Abstract

The invention provides a preparation method for zinc arsenide. The preparation method comprises the following steps: weighing high-purity arsenic particles and high-purity zinc ingots with corresponding weights according to the molar proportion of arsenic and zinc in zinc arsenide, uniformly paving the weighed high-purity arsenic particles in a crucible boat, then covering the high-purity zinc ingots on the high-purity arsenic particles, and then horizontally placing the crucible boat in a plain-end quartz tube; vacuumizing the plain-end quartz tube filled with the high-purity arsenic particles and the high-purity zinc ingots by a vacuum unit, and then carrying out high-temperature sealing for the plain-end quartz tube by virtue of oxyhydrogen flame; placing the sealed plain-end quartz tube in a horizontal synthesis furnace, heating and insulating for a period of time, and then stopping heating and naturally cooling the horizontal synthesis furnace; after the horizontal synthesis furnace is cooled to a normal temperature, taking out the horizontal synthesis furnace and knocking open the plain-end quartz tube to obtain a high-purity zinc arsenide crystal. The preparation method provided by the invention increases the reaction speed of the synthesis process, can well control the arsenic vapour pressure during the synthesis process, and enables the reaction to be complete and adequate.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a preparation method of trizinc diarsenide. Background technique [0002] Trizinc diarsenide is a gray crystal, which is often used as a reagent for spectral analysis and a raw material for the preparation of electronic components. It is also a new type of semiconductor material. In the semiconductor material industry, trizinc diarsenide can also be used as the raw material or arsenic source of semiconductor materials such as gallium arsenide, indium arsenide, gallium arsenic phosphide, and indium arsenic phosphide prepared by methods such as epitaxy and vapor phase chemical deposition. Its use is becoming more and more extensive. [0003] At present, the method of preparing zinc diarsenide mainly adopts gas phase synthesis or vacuum volatilization synthesis followed by vacuum distillation separation and purification, which has problems such as slow reaction speed, ...

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Problems solved by technology

[0003] At present, the method of preparing zinc diarsenide mainly adopts gas phase synthesis or vacuum volatilization synthesis, followed by vacuum distillation, separation and purification, which has problems such as slow reaction speed, large equipment investment, small synthesis scale and complicated process.

And because arsenic begins to sublimate at 613°C, its vapor pressure increases sharply with the increase of temperature, and there are safety hazards such as tube explosion. Therefore, many preparation methods currently use the synthesis of primary zinc diarsenide at a lower temperature. However, the reaction at low temperature is not sufficient, and there are a large amount of free arsenic, zinc and zinc arsenide in the synthetic material.

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