Preparation method of quantum dot/enzyme compounded carbon paste electrode for detecting SAM (S-Adenosylmethionine)
A technology of quantum dots and composite carbon, which is applied in the field of preparation of quantum dots/enzyme composite carbon paste electrodes, to achieve the effects of easy surface, surface renewal, and small residual current
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Embodiment 1
[0029] (1) Preparation of semiconductor precursor solution: In the reactor, add 1.0g of tellurium powder, 0.9g of sodium borohydride, 50mL of deionized water, and ultrasonically disperse for 10 min under the protection of argon, and keep the temperature at 60°C Reflux the reaction for 5 hours, cool to room temperature, and place in an ice-water bath to obtain a semiconductor precursor solution;
[0030] (2) Preparation of zinc and cadmium precursor liquid: In the reactor, add cadmium chloride: 0.6g, zinc chloride: 0.5g, cysteine: 0.9g, water: 98mL, and adjust the pH of the solution with sodium hydroxide was 10, introduced argon, refluxed at 85°C for 4 hours, and cooled to room temperature to obtain a zinc-cadmium precursor liquid;
[0031] (3) Preparation of water-soluble CdZnTe quantum dots: Add the semiconductor precursor solution prepared in step (1) into the zinc-cadmium precursor solution prepared in step (2) under the protection of argon, and react at 85°C for 5 hours un...
Embodiment 2
[0035] (1) Preparation of semiconductor precursor solution: In the reactor, add 0.5g of tellurium powder, 0.6g of sodium borohydride, 30mL of deionized water, and ultrasonically disperse for 10 min under the protection of argon, and keep the temperature at 60°C Reflux the reaction for 4 hours, cool to room temperature, and place in an ice-water bath to obtain a semiconductor precursor solution;
[0036] (2) Preparation of zinc and cadmium precursor liquid: In the reactor, add cadmium chloride: 1.0g, zinc chloride: 0.8g, cysteine: 1.2g, water: 97mL, and adjust the pH of the solution with sodium hydroxide was 10, passed in argon, refluxed at 80°C for 5 hours, and cooled to room temperature to obtain a zinc-cadmium precursor liquid;
[0037] (3) Preparation of water-soluble CdZnTe quantum dots: add the semiconductor precursor solution prepared in step (1) to the zinc-cadmium precursor solution prepared in step (2) under the protection of argon, and react at 85°C for 4 hours under...
Embodiment 3
[0041] (1) Preparation of semiconductor precursor solution: In the reactor, add 0.8g of tellurium powder, 0.5g of sodium borohydride, 40mL of deionized water, and ultrasonically disperse for 10 min under the protection of argon, and keep the temperature at 60°C Reflux the reaction for 6 hours, cool to room temperature, and place in an ice-water bath to obtain a semiconductor precursor solution;
[0042] (2) Preparation of zinc and cadmium precursor liquid: In the reactor, add cadmium chloride: 0.2g, zinc chloride: 0.2g, cysteine: 0.6g, water: 99mL, and adjust the pH of the solution with sodium hydroxide was 10, introduced argon, refluxed at 85°C for 4 hours, and cooled to room temperature to obtain a zinc-cadmium precursor liquid;
[0043] (3) Preparation of water-soluble CdZnTe quantum dots: Add the semiconductor precursor solution prepared in step (1) into the zinc-cadmium precursor solution prepared in step (2) under the protection of argon, and react at 85°C for 6 hours un...
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