Preparation method of quantum dot/enzyme composite carbon paste electrode for detection of SAM
A technology of quantum dots and composite carbon, which is applied in the field of preparation of quantum dots/enzyme composite carbon paste electrodes, to achieve the effects of wide electrochemical window, surface renewal, and small residual current
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Embodiment 1
[0029] (1) Preparation of semiconductor precursor solution: In the reactor, add 1.0g of tellurium powder, 0.9g of sodium borohydride, 50mL of deionized water, under the protection of argon, ultrasonically disperse for 10 min, and hold at 60℃. The reaction was refluxed for 5 hours, cooled to room temperature, and placed in an ice water bath to obtain a semiconductor precursor solution;
[0030] (2) Preparation of zinc-cadmium precursor solution: In the reactor, add cadmium chloride: 0.6g, zinc chloride: 0.5g, cysteine: 0.9g, water: 98mL, and adjust the pH of the solution with sodium hydroxide. It is 10, argon gas is introduced, the reaction is refluxed at a constant temperature of 85°C for 4 hours, and then cooled to room temperature to prepare a zinc-cadmium precursor liquid;
[0031] (3) Preparation of water-soluble CdZnTe quantum dots: Add the semiconductor precursor solution prepared in step (1) to the zinc-cadmium precursor solution prepared in step (2) under the protection of ...
Embodiment 2
[0035] (1) Preparation of semiconductor precursor solution: In the reactor, add 0.5g of tellurium powder, 0.6g of sodium borohydride, 30mL of deionized water, under the protection of argon, ultrasonically disperse for 10 min, and hold at 60℃. The reaction was refluxed for 4 hours, cooled to room temperature, and placed in an ice-water bath to obtain a semiconductor precursor solution;
[0036] (2) Preparation of zinc-cadmium precursor solution: In the reactor, add cadmium chloride: 1.0g, zinc chloride: 0.8g, cysteine: 1.2g, water: 97mL, and adjust the pH of the solution with sodium hydroxide. It is 10, argon gas is introduced, and the reaction is refluxed at 80°C for 5 hours, and then cooled to room temperature to prepare zinc-cadmium precursor liquid;
[0037] (3) Preparation of water-soluble CdZnTe quantum dots: Add the semiconductor precursor solution prepared in step (1) to the zinc-cadmium precursor solution prepared in step (2) under the protection of argon, and react at a co...
Embodiment 3
[0041] (1) Preparation of semiconductor precursor solution: In the reactor, respectively add 0.8g tellurium powder, 0.5g sodium borohydride, 40mL deionized water, under the protection of argon, ultrasonically disperse for 10 min, and hold at 60℃. The reaction was refluxed for 6 hours, cooled to room temperature, and placed in an ice-water bath to obtain a semiconductor precursor solution;
[0042] (2) Preparation of zinc-cadmium precursor solution: In the reactor, add cadmium chloride: 0.2g, zinc chloride: 0.2g, cysteine: 0.6g, water: 99mL, and adjust the pH of the solution with sodium hydroxide. It is 10, argon gas is introduced, the reaction is refluxed at 85°C for 4 hours, and cooled to room temperature to prepare zinc-cadmium precursor liquid;
[0043] (3) Preparation of water-soluble CdZnTe quantum dots: The semiconductor precursor solution prepared in step (1) is added to the zinc-cadmium precursor solution prepared in step (2) under the protection of argon, and the solution ...
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