Organic polymer memristor structure unit

A technology of organic polymers and structural units, which is used in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc.

Active Publication Date: 2015-10-14
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the materials with memristor function reported so far ar...

Method used

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  • Organic polymer memristor structure unit
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  • Organic polymer memristor structure unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] In this embodiment, the structure of the organic polymer memristive unit is as follows figure 1 as shown in a. The structural unit includes an insulating substrate 1 , a bottom electrode layer 2 , an organic polymer memristive layer 3 and a top electrode layer 4 . The bottom electrode layer 2 is located on the insulating substrate 1 , the memristive layer 3 is located on the bottom electrode layer 2 , and the top electrode layer 4 is located on the memristive layer 3 .

[0082] The material of the bottom electrode layer 2 is ITO. The material of the top electrode 4 is Al.

[0083] Such as figure 1 As shown in b, the memristive layer 3 has a double-layer structure, which is composed of an organic polymer resistive layer 5 and an organic polymer electrolyte layer 6 . The organic polymer electrolyte layer 6 is located on the bottom electrode 2 and is lithium perchlorate (LiClO 4 ), a mixture of polymethyl methacrylate (PMMA), ethylene carbonate (EC) and propylene carb...

Embodiment 2

[0134] In this embodiment, the structure of the organic polymer memristive unit is as follows figure 1 as shown in a. The structural unit includes an insulating substrate 1 , a bottom electrode layer 2 , an organic polymer memristive layer 3 and a top electrode layer 4 . The bottom electrode layer 2 is located on the insulating substrate 1 , the memristive layer 3 is located on the bottom electrode layer 2 , and the top electrode layer 4 is located on the memristive layer 3 .

[0135] The material of the bottom electrode layer 2 is ITO. The material of the top electrode 4 is Al.

[0136] Such as figure 1 As shown in b, the memristive layer 3 has a double-layer structure, which is composed of an organic polymer resistive layer 5 and an organic polymer electrolyte layer 6 . The organic polymer electrolyte layer 6 is located on the bottom electrode 2 and is composed of a polymer material formed by polymerizing fluorenyl monomers containing 4,4'-bipyridyl hexafluorophosphate. ...

Embodiment 3

[0187] In this embodiment, the structure of the organic polymer memristive unit is basically the same as in Embodiments 1 and 2, the difference is: as figure 1 As shown in c, the memristive layer 3 has a single-layer structure, and the single-layer memristive layer 3 is located at the intersection of the top electrode 4 and the bottom electrode 2, and is formed by mixing ionic liquid and organic polymer resistive material. The ionic liquid is lithium hexafluorophosphate (LiPF 6 ), the organic polymer resistive material is polypyrrole (PPy). The single-layer memristive layer 3 can be formed on the bottom electrode 2 by spin coating, LB or self-assembly.

[0188] The material of the bottom electrode layer 2 is Pt. The material of the top electrode 4 is Ta.

[0189] An electric field stimulus is applied to the organic polymer memristive structural unit, as follows:

[0190] (1) Voltage scan

[0191] A voltage scan is applied to the organic polymer memristive structure unit, ...

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Abstract

Provided is an organic macromolecule resistance memory structure unit, comprising an insulating substrate (1), a bottom electrode layer (2), a resistance memory layer (3) and a top electrode layer (4). The resistance memory layer (3) is consisted of an organic macromolecule electrolyte material (6) and an organic macromolecule resistance variable material (5). The organic macromolecule resistance memory structure unit is stimulated with a pulse voltage or a scan voltage, when stimulating, removing the stimulate and re-stimulating, the current-stimulate times characteristic curve and current-time characteristic curve are represented a character like the biology neuron synapse which realizes learning, memory, forgetting, recalling. The organic macromolecule resistance memory structure unit can be used to the computer field as an new type microelectronics-bionics units by simulating the working mode of human brain neuron synapse dealing and learning information, so the calculation speed and process ability in parallel of the computer will be increased greatly.

Description

technical field [0001] The invention belongs to the technical fields of organic polymer, memory technology and bionics, and specifically relates to an organic polymer memristive structural unit with learning and memory functions. Background technique [0002] Memristor is the fourth nonlinear circuit element that exists outside the three basic passive devices of resistance, capacitance and inductance. It reflects the relationship between charge and magnetic flux, and its resistance value will vary with the direction and amount of charge flowing through. And change. In 1971, Cai Shaotang, a professor at the University of California, Berkeley, first proposed the concept of a memristor, but it was not until 2008 that Hewlett-Packard Labs first realized the function of a memristor in a titanium dioxide-based metal / insulator / metal sandwich structure device. Subsequently, similar memristive functions have been found in various transition metal oxides such as nickel oxide, vanadiu...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30
CPCH10K10/00
Inventor 刘钢李润伟张文斌潘亮冀正辉张超超
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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