Structure reducing micro cavity thermal-optical bistable state power threshold via photoresistance feedback
A photoresistor and microcavity thermo-optic technology, applied in the direction of optical bistable devices, optics, etc., can solve the problems of photonic crystal size error, limited practical application, and inability to stabilize mass production, etc., to reduce the threshold value and reduce system adjustment Power consumption, enhancing the effect of thermo-optical nonlinearity
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[0043] figure 2 The thickness of the middle and lower cladding layer 2 is 2um; the width of the ridge of the waveguide layer 3 is 500nm, the height of the inner ridge is 220nm, and the height of the outer ridge is 60nm; the thickness of the upper cladding layer 4 is 1.5um. The heavily doped region 7 is p-type doped with a width of 4um and a doping concentration of 10 20 cm -3 ; Lightly doped intrinsic i region 6 doping concentration 10 15 cm -3 ; The distance between the edge of the heavily doped region 7 and the edge of the waveguide core region is 300nm; the width of the through hole is 1um; a p-i-p thermal resistance structure is formed. The relationship between the voltage and current of this p-i-p thermal resistance structure is as follows image 3 As shown, after the voltage increases to ~9.5V, the resistance decreases continuously as the voltage increases. When the applied voltage is 4V, the temperature distribution of the structure after stabilization is as follow...
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