Quasi-three-level laser

A quasi-three-level laser technology, applied in lasers, laser components, phonon exciters, etc., can solve problems that affect the overall performance of quasi-three-level lasers, difficult to meet practical requirements, and low light-to-light conversion efficiency , to achieve the effect of solving the additional thermal effect, improving the light-to-light conversion efficiency, and reducing the thermal effect

Inactive Publication Date: 2012-04-04
SUZHOU INST OF BIOMEDICAL ENG & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, the output power is low; the current maximum output power is only 16.2 W, which belongs to low-to-medium power lasers
Second, the conversion efficiency is low, and the light-to-light conversion efficiency is mostly lower than 30%. On the one hand, the low efficiency causes high power consumption, and on the other hand, it will cause a large thermal effect, which seriously affects the overall quality of quasi-three-level lasers. performance
Third, the beam quality is poor and the laser brightness is low, making it difficult to meet practical requirements

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0026] see figure 1 As shown, a quasi-three-level laser that realizes high-efficiency, low-threshold, and high-brightness 0.9X μm lasers, the device for realizing the method includes the following four parts: polarized pump light generation unit 1, beam shaping unit 2, gain medium Unit 3 and 0.9X μm optical cavity unit 4;

[0027] The polarized light generating unit 1 includes a polarized semiconductor laser, whose working mode is continuous working mode, the degree of polarization is 0.9, the maximum continuous pumping power is 30W, and the output wavelength is 808nm.

[0028] The beam shaping unit 2 includes a multimode optical fiber and a collimating and focusing lens group. Among them, the core diameter of the multimode fiber is 200 μm, and the numerical aperture NA=0.18; the collimating and focusing lens group is composed of 4 aspherical lenses, and the surface of the lens is coated with a film system with a transmittance of 99.5% at 808 nm, which can continuously adjust...

Embodiment 2

[0033] Roughly the same as Example 1, the differences are as follows:

[0034] (1) The polarized light generating unit 1 includes a conventional non-polarized semiconductor laser and a polarizer, which modulates the laser light emitted by the semiconductor laser into polarized light. Among them, the working mode of the semiconductor laser is continuous working mode, the maximum continuous pumping power is 40W, and the output wavelength is 808nm; the transmittance of the polarizer is 95% for p-wave and 2% for s-wave.

[0035] (2) The laser gain medium is traditional Nd:GdVO 4 Single crystal, the doping concentration is 0.2at.%, the size is 3×3×5 mm 3, the front and rear end faces are coated with anti-reflection coatings for beams with wavelengths of 808nm, 912nm, 1064nm and 1340nm, of which the transmittance of beams of 912nm and 1064nm is greater than 99.8%, and the transmittance of beams of 808nm and 1342nm is greater than 98%.

Embodiment 3

[0037] Roughly the same as Example 1, the differences are as follows:

[0038] (1) The polarized light generating unit 1 includes a polarized semiconductor laser, the working mode of which is continuous working mode, the degree of polarization is 0.9, the maximum continuous pumping power is 40W, and the output wavelength is 879nm.

[0039] (2) The laser gain medium is traditional Nd:LuVO 4 Ceramic, doping concentration 0.2at.%, size 3×3×6 mm 3 , the front and rear end faces are coated with anti-reflection coatings for beams with wavelengths of 879nm, 916nm, 1066nm and 1343nm, of which the transmittance of beams of 916nm and 1066nm is greater than 99.8%, and the transmittance of beams of 879nm and 1343nm is greater than 98%.

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Abstract

The invention discloses a quasi-three-level laser which realizes high-efficiency, low-threshold and high-brightness 0.9X[mu]m laser. A light path is in sequence provided with a polarization pump light generation unit, a beam shaping unit, a gain medium unit and a 0.9X[mu]m optical resonance cavity unit, wherein the polarization pump light generation unit is used for pumping Nd3+ in a laser medium to the upper energy level of the 0.9X[mu]m quasi-three-level laser; the polarization pump light generation unit is a laser device with a central wavelength of 500nm to 900nm, and the laser output polarization ratio of the laser device is more than 0.9; the beam shaping unit is used for shaping a laser beam output by the polarization pump light generation unit into a pump beam matched with the laser medium and an optical resonance cavity; the gain medium unit is used for generating 0.9X[mu]m photons by induced transition; and the 0.9X[mu]m optical resonance cavity unit is used for generating low-threshold and high-brightness 0.9X[mu]m lasers.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics and laser technology, in particular to a 0.9X μm quasi-three-level laser. Background technique [0002] Nd 3+ The laser spectral line generated by the quasi-three-level transition is located near the 0.9Xμm (where 0.9≤0.9X<1.0) band, which can produce shorter wavelengths (compared to 1 μm). The laser in this spectrum is used in water vapor detection, ozone detection and Differential absorption radar has many special applications. More importantly, it can be converted to the blue spectral region after frequency doubling, because blue lasers are widely used in high-density data storage, RGB full-color display, biomedicine, high-resolution printing, underwater communication and Raman spectroscopy, etc. . [0003] In 1987, Fan and Byer of Stanford University established a theoretical model of a quasi-three-level laser, clarified the unique reabsorption mechanism in a quasi-three-level la...

Claims

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Application Information

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IPC IPC(8): H01S3/06H01S3/0941
Inventor 高静武晓东戴仙金张龙位兵
Owner SUZHOU INST OF BIOMEDICAL ENG & TECH
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