A method for growing high-quality GaN epitaxial structures using a low-temperature transition layer
An epitaxial structure, gallium nitride technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of many dislocations and defects in gallium nitride epitaxial materials, poor crystal quality of epitaxial materials, and poor crystal nucleus quality problems, to achieve the effect of improving crystal quality, reducing dislocation density, improving service life and efficiency
Active Publication Date: 2018-01-30
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Due to the large number of dislocations and defects in the nitride nucleation layer grown at low temperature, the quality of the crystal nucleus is poor. On this basis, when GaN epitaxial materials are grown at high temperature, dislocations and defects caused by lattice mismatch and thermal expansion mismatch Defects continue to extend, GaN epitaxial materials still have many dislocations and defects, and the crystal quality of epitaxial materials is still poor
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0026] like figure 1 As shown, the present invention provides a method for growing a high-quality gallium nitride epitaxial structure using a low-temperature transition layer, taking a sapphire substrate as an example, including the following steps:
[0027] 1) Using MOCVD technology, the sapphire substrate is heat-treated in the MOCVD reaction chamber: in a hydrogen atmosphere, the temperature is maintained at 800 ℃ to 1300 ℃ for 300 s to 2000 s; then the temperat...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a method for growing a high-quality gallium nitride epitaxial structure by using a low-temperature transition layer, and relates to the technical field of semiconductors. The method comprises the following steps: (1) performing heat treatment on a substrate at high temperature by using the MOCVD technology, and then lowering the temperature; (2) growing a low-temperature nitride nucleation layer on the substrate; (3) performing annealing to crystallize the nucleation layer; (4) raising the temperature, and growing a layer of gallium nitride on the nucleation layer after annealing; (5) stopping feeding a gallium source, stopping growing gallium nitride, and lowering the temperature; (6) continuing to feed the gallium source to grow gallium nitride, and raising the temperature; and (7) sequentially growing an insertion layer, a channel layer, a cap layer and a passivation layer on the gallium nitride layer to obtain a complete epitaxial structure. By using the low-temperature transition layer, the dislocation density of the gallium nitride epitaxial layer is reduced effectively, the quality of gallium nitride crystals is improved, and the service life and efficiency of gallium nitride based devices are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a high-quality gallium nitride epitaxial structure by using a low-temperature transition layer. Background technique [0002] As a typical representative of the third-generation semiconductor, gallium nitride materials are widely used in electronic systems such as wireless communication and radar in the microwave and millimeter wave frequency bands due to their wide band gap and high electron velocity. The development prospect of optoelectronics and microelectronics is very broad. [0003] At present, the main method of obtaining gallium nitride epitaxial materials is through epitaxial growth on substrates, including gallium nitride, sapphire, silicon carbide, aluminum nitride, and silicon-based substrates. However, due to the large lattice mismatch and thermal expansion mismatch between the gallium nitride material and the substrate, (for example, th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/02
CPCH01L21/02458H01L21/0254H01L21/0262H01L21/2056
Inventor 张志荣尹甲运房玉龙芦伟立冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP