A method of fabricating selective nano-textured silicon photovoltaic cells
A technology of textured silicon and photovoltaic cells, which is applied to circuits, electrical components, climate sustainability, etc., can solve the problems of affecting electrode efficiency, great difficulty in accurate engraving, and cumbersome process, so as to reduce process difficulty and reduce The effect of simple steps and process procedures such as ultraviolet lithography and overlay
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[0044] Step 1: Put the cleaned silicon wafer in a 850-degree diffusion furnace, pass in 100 sccm of nitrogen carrying phosphorus oxychloride, and diffuse for 13 minutes to form a P-N junction with a sheet resistance of 30Ω / □ and a junction depth of about 400 nanometers.
[0045] Step 2, removing the P-N junction structure on the back and side of the silicon wafer in step 1 by plasma etching. The back side of the silicon wafer is facing up, the front side is protected, and the etching condition is SF 6 :He=120:10sccm, working pressure 4Pa, excitation power 500W, bias power 30W, etching time 5 minutes.
[0046] Step 3: Soak the silicon wafer in step 2 with diluted hydrofluoric acid (5% by mass) for 5 minutes to remove the silicon dioxide layer on the surface of the silicon wafer.
[0047] Step 4, cover the front surface of the silicon wafer with a hollow metal mask with an electrode pattern structure on the front surface of the silicon wafer in step 3, evaporate a 1 micron thic...
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