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A method of fabricating selective nano-textured silicon photovoltaic cells

A technology of textured silicon and photovoltaic cells, which is applied to circuits, electrical components, climate sustainability, etc., can solve the problems of affecting electrode efficiency, great difficulty in accurate engraving, and cumbersome process, so as to reduce process difficulty and reduce The effect of simple steps and process procedures such as ultraviolet lithography and overlay

Active Publication Date: 2017-01-25
INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This conventional method uses ultraviolet lithography and overlay technology. On the one hand, the process is cumbersome, and impurities such as photoresist will also be introduced in the process of ultraviolet lithography, which will affect the electrode efficiency; on the other hand, for thin and long Grid line structure, accurate overlay is also very difficult

Method used

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  • A method of fabricating selective nano-textured silicon photovoltaic cells
  • A method of fabricating selective nano-textured silicon photovoltaic cells
  • A method of fabricating selective nano-textured silicon photovoltaic cells

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Embodiment

[0044] Step 1: Put the cleaned silicon wafer in a 850-degree diffusion furnace, pass in 100 sccm of nitrogen carrying phosphorus oxychloride, and diffuse for 13 minutes to form a P-N junction with a sheet resistance of 30Ω / □ and a junction depth of about 400 nanometers.

[0045] Step 2, removing the P-N junction structure on the back and side of the silicon wafer in step 1 by plasma etching. The back side of the silicon wafer is facing up, the front side is protected, and the etching condition is SF 6 :He=120:10sccm, working pressure 4Pa, excitation power 500W, bias power 30W, etching time 5 minutes.

[0046] Step 3: Soak the silicon wafer in step 2 with diluted hydrofluoric acid (5% by mass) for 5 minutes to remove the silicon dioxide layer on the surface of the silicon wafer.

[0047] Step 4, cover the front surface of the silicon wafer with a hollow metal mask with an electrode pattern structure on the front surface of the silicon wafer in step 3, evaporate a 1 micron thic...

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Abstract

The invention discloses a method for producing a selective nanometer textured silicon photocell. The method comprises: performing phosphorus oxychloride diffusion on a silicon chip in order to form a P-N junction structure; removing the P-N junction structure on the back surface and the side surface of the silicon chip; vapor plating a titanium silver layer on the front surface of the silicon chip to form a metallic gate line electrode and forming an aluminum back electrode layer on the back surface of the silicon chip; forming a cesium chloride nanometer circular island structure on the metallic gate line electrode and the surface of the silicon chip uncovered with the metallic gate line electrode, etching the silicon chip by using the cesium chloride nanometer circular island structure as a mask, transferring the cesium chloride nanometer circular island structure to the surface of the silicon chip, removing the cesium chloride nanometer circular island structure, and obtaining a silicon nanometer cylindrical structure on the surface of the silicon chip uncovered with the metallic gate line electrode; performing high-temperature sintering in order that the metallic gate line electrode and the silicon chip form ohmic contact. Compared with a conventional method, the method eliminates steps of ultraviolet lithography and alignment, simplifies process programs, decreases cost, reduces process difficulty, and is more suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of micro-nano semiconductor micromachining, in particular to a method for manufacturing a selective nano-textured silicon photovoltaic cell. Background technique [0002] Nano-array is a new type of surface structure, which has huge industrial applications in many fields such as solar cells and LEDs. Nano-texturing has excellent characteristics of reducing visible light reflection and improving spectral response. Now nano-textured solar cells are gradually being commercialized. In conventional nano-textured solar cells, the front surface is textured as a whole, and the grid electrode is covered on the surface of the textured silicon. This electrode form Failure to form a good ohmic contact is detrimental to improving the photoelectric conversion efficiency of the battery. [0003] In order to overcome the problem that nano-texturing cannot form good ohmic contacts, researchers have invented selective nano-t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1804Y02P70/50
Inventor 刘静伊福廷张天冲王波张新帅孙钢杰
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
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