Rapid preparation method for C/SiC composite material

A composite material and fast technology, applied in the field of materials, can solve problems such as complex process, high cost, and long preparation cycle, and achieve the effects of reducing manufacturing cost, improving density, and saving time

Inactive Publication Date: 2015-11-04
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In order to solve the problems of long preparation period, high cost and complex process in the prior art, and further promote the development and app

Method used

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  • Rapid preparation method for C/SiC composite material
  • Rapid preparation method for C/SiC composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

[0030] Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

[0031] Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a p...

Embodiment 2

[0035] Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

[0036] Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

[0037] Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a p...

Embodiment 3

[0041] Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

[0042] Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

[0043] Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a p...

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Abstract

The invention relates to a rapid preparation method for a C/SiC composite material. The method is characterized by including the steps of: 1. depositing a pyrolytic carbon interface on a thin layer carbon fiber preform surface by a chemical vapor deposition process; 2. infiltrating the thin layer carbon fiber perform of the deposited PyC interface in a polycarbosilane mixed solution, and then carrying out cross-linking curing and pyrolysis in order under protective atmosphere to obtain a thin layer C/SiC composite material; 3. repeating the previous step 2-3 times; and 4. stacking a plurality of single-layer composite materials in a graphite die to conduct spark plasma sintering (SPS), thus rapidly obtaining a compact C/SiC composite material finally. The method provided by the invention makes full use of the characteristics of short thin layer infiltration time of PIP (precursor infiltration and pyrolysis) method and rapid sintering of SPS method to realize preparation of the C/SiC composite material, is suitable for compaction of small compact components, saves 95% of time than the traditional CVI (chemical vapor infiltration) method and PIP method, also significantly improves the compactness of the composite material, and reduces the making cost of the composite material.

Description

technical field [0001] The invention relates to the preparation of C / SiC composite materials in the field of materials, in particular to a process method for rapidly preparing C / SiC composite materials. Background technique [0002] C / SiC composite material is a new type of ultra-high temperature structural material that has emerged with the development of aerospace technology. It has low density, high strength, high toughness, high temperature resistance, chemical corrosion resistance, ablation resistance, erosion resistance, high hardness and High wear resistance and other characteristics. Currently, there are many methods for preparing C / SiC composite materials, and chemical vapor infiltration (Chemical vapor infiltration, CVI) is a method that has been used and commercialized. Patent No. 102690124A discloses a C / SiC ceramic matrix composite material and its preparation method. The method uses CVI to sequentially deposit a pyrolytic carbon interface layer and a silicon c...

Claims

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Application Information

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IPC IPC(8): C04B35/83C04B35/565C04B35/622
Inventor 刘永胜门静张青王晶田卓成来飞张立同
Owner NORTHWESTERN POLYTECHNICAL UNIV
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