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Processing method of copper foil for graphene film growth and copper foil prepared by the method

A technology of graphene film and treatment method, applied in cleaning methods and appliances, chemical instruments and methods, gaseous chemical plating, etc., can solve the problems of uneven growth of graphene film, low cleanliness and low activity, and achieve uniformity and stability Nucleation growth, improved integrity and uniformity, removal of thorough effects

Active Publication Date: 2017-10-03
2D CARBON CHANGZHOU TECH INC
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a treatment method of copper foil for graphene film growth, which solves the technical problem of uneven growth of graphene film due to the low cleanliness and low activity of the copper foil surface for graphene film growth

Method used

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  • Processing method of copper foil for graphene film growth and copper foil prepared by the method
  • Processing method of copper foil for graphene film growth and copper foil prepared by the method
  • Processing method of copper foil for graphene film growth and copper foil prepared by the method

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Embodiment 1

[0028] The processing method of the copper foil used for the graphene thin film growth of the present embodiment, see figure 1 , the steps include: (1) plasma pretreatment, (2) electrochemical polishing, cleaning, (3) secondary plasma treatment; the specific steps include:

[0029] (1) Plasma pretreatment: The treatment process is carried out in two steps. First, the cut copper foil blank is placed in a vacuum plasma cleaning machine, and a certain flow of oxygen is passed through to perform the first plasma decontamination treatment. The active particles in the oxygen plasma can go deep into the micro holes and depressions, completely remove the dirt on the surface of the copper foil blank through chemical reaction, and effectively improve the cleanliness of the surface of the copper foil blank; the process control process conditions are: power 400W-500W , the pressure of the cleaning working cabin is below 40Pa, the oxygen flow rate is 150sccm-200sccm, and the processing tim...

Embodiment 2

[0042] On the basis of above-mentioned embodiment 1, the present invention also provides a kind of copper foil for graphene film growth, described graphene film growth copper foil is made by the processing method of described graphene film growth copper foil, The effect of growing graphene film on this copper foil, see figure 2 to Figure 6.

[0043] Specifically, the copper foils that have undergone different treatment processes are placed in the same diffusion furnace at the same time, and the growth process is controlled to perform CVD graphene film nucleation and growth. After the obtained copper foil samples are placed on a constant temperature heating plate at 150 ° C for 5 minutes, Observed with a metallographic microscope, the results are shown in Figure 6(a) to Figure 6(d), the white matter in the figure is the graphene film grains in the nucleation and growth. It can be seen from Figure 6(a) that the untreated copper foil has a large nucleation density of the graphe...

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Abstract

The invention relates to a treatment method of copper foil for graphene film growth and the copper foil prepared by the method. The treatment method comprises: (1) performing plasma cleaning and decontamination on the copper foil blank, and then performing plasma cleaning on the copper foil blank Deoxidation treatment, that is, using hydrogen as a plasma treatment gas to remove the surface oxide layer of the copper foil blank; (2) After electrochemically polishing the copper foil blank from which the oxide layer has been removed; (3) Repeat step (1), The oxide layer on the surface of the polished copper foil blank is removed to obtain the copper foil for growing the graphene film. In the plasma treatment process of the present invention, a two-step method is adopted. The first step is to feed oxygen to remove organic stains, and the second step is to feed hydrogen or other reducing gases to remove the oxide layer. These two processes all belong to chemical reactions. The physical reaction efficiency of gas is high, the treatment is more thorough, and it can effectively avoid yellowing of copper foil, so as to improve the integrity and uniformity of graphene film formation in the later stage.

Description

technical field [0001] The invention relates to a method for processing copper foil for graphene film growth and the copper foil prepared by the method. Background technique [0002] Graphene film, a single layer of carbon atoms with a graphite structure, has shocked the entire scientific community with its unique structure and excellent properties since it was first discovered in 2004. The rapid development of graphene films urgently requires large-scale batch preparation of high-quality graphene films with controllable structure thickness and size. At present, there are mainly the following methods for preparing graphene thin films: (1) micromechanical exfoliation method, (2) crystal epitaxial growth method, (3) chemical redox method, and (4) chemical vapor deposition (CVD) method. Among them, the CVD method is currently the most commonly used method for preparing large-area graphene thin films. The CVD method refers to the method in which the reaction substances undergo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C25F3/22B08B7/00
Inventor 金虎邓科文刘志成彭鹏张志华张文国杨海涛张旭磊齐轩
Owner 2D CARBON CHANGZHOU TECH INC
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