MEMS pressure sensor and manufacturing method thereof

A pressure sensor and manufacturing method technology, applied in the field of sensors, can solve problems such as reducing the performance of pressure sensors, achieve the effects of reducing sensitivity, improving performance, and improving signal-to-noise ratio

Active Publication Date: 2015-11-11
WEIFANG GOERTEK MICROELECTRONICS CO LTD
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The above technical solution has its inherent shortcomings. When the main board where the chip is located is deformed, the external stress is transmitted upward from the substrate to the pressure sensitive film, and the piezoresistive pressure sensitive film itself is very sensitive to stress. MEMS pressure Sensor output can vary with stress, degrading pressure sensor performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS pressure sensor and manufacturing method thereof
  • MEMS pressure sensor and manufacturing method thereof
  • MEMS pressure sensor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0030] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0031] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0032] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an MEMS pressure sensor and a manufacturing method of the MEMS pressure sensor. A sensitive membrane layer which forms a vacuum chamber with a substrate is arranged above the substrate. The sensitive membrane layer comprises a middle sensitive portion and a supporting portion which is arranged at the edge of the sensitive portion and supported on the substrate, wherein the plane where the sensitive portion is located is lower than the supporting portion and is connected with the supporting portion via an inclining portion so that the sensitive portion, the inclining portion and the supporting portion could form a step-shaped structure. According to the MEMS pressure sensor, the sensitive portion, the inclining portion and the supporting portion in the sensitive membrane layer forms a step-shaped sinking structure, so that the internal stress of the sensitive membrane layer could be completely released in the process of depositing the sensitive membrane layer. Because the elastic coefficient of the sensitive membrane layer is low, relative higher sensitivity could be obtained. In addition, the sensitive portion is connected with the supporting portion via the inclining portion, so the sensibility of the sensitive portion to the change of the stress could be greatly reduced so as to improve signal to noise ratio of a chip and improve the performance of the pressure sensor.

Description

technical field [0001] The invention relates to the field of sensors, and more specifically, to a MEMS pressure sensor; the invention also relates to a method for manufacturing the MEMS pressure sensor. Background technique [0002] In the current technical solutions, MEMS pressure sensors mainly include capacitive and piezoresistive. Among them, the piezoresistive pressure sensor is made of piezoresistive strips on the pressure sensitive film by ion implantation to form a Wheatstone bridge. , the pressure sensitive membrane is flat. When the external pressure changes, the pressure-sensitive membrane will deform upward or downward, causing the resistance of the piezoresistor strip to change, so that the external pressure change can be detected through the Wheatstone bridge. [0003] The above technical solution has its inherent shortcomings. When the main board where the chip is located is deformed, the external stress is transmitted upward from the substrate to the pressur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00B81C3/00G01L1/18G01L9/06
Inventor 郑国光
Owner WEIFANG GOERTEK MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap