Light emitting diode

A technology of light-emitting diodes and electrodes, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of less formation area, inability to effectively radiate recombination, and decrease in luminous intensity, so as to improve recombination efficiency, luminous efficiency, and luminous intensity. the effect of strength

Active Publication Date: 2015-11-11
LITE ON TECH CORP
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Problems solved by technology

[0005] However, when the light-emitting band of the light-emitting diode gradually shifts from the blue light to the ultraviolet light band, since the indium content in the active layer gradually decreases, the formation area of ​​indium self-agglomeration is relatively reduced, which makes the carriers in the light-emitting diode easy to Moved to the defect to produce non-radiative recombination, resulting in a significant reduction in the luminous efficiency of the light-emitting diode in the near-ultraviolet light; moreover, the nitride semiconductor itself has a polarization field effect that causes the energy band of the active layer to bend, and the electron-hole pair is not easy to be absorbed.

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[0064] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0065] figure 1 It is a schematic cross-sectional view of a light emitting diode in an embodiment of the invention.

[0066] Please refer to figure 1 The light emitting diode 200 includes a substrate 210, an N-type semiconductor layer 220, an active layer 230, a P-type semiconductor layer 240, and a first electrode 250 and a second electrode 260. The substrate 210 is, for example, a sapphire substrate. Specifically, a nitride semiconductor cladding layer 212 (for example, undoped gallium nitride), an N-type semiconductor layer 220, an active layer 230, and a P-type semiconductor layer 240 are sequentially formed on a surface of the sapphire substrate 210 The active layer 230 is located between the N-type semiconductor lay...

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Abstract

A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first electrode, and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region, in which the defect density is greater than or equal to 2x10<SP>7</SP>/cm<SP>3</SP>. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is λ , and 222 nm ≤ λ ≤ 405 nm. The active layer includes i quantum barrier layers and (i-1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i is an integer greater than or equal to 2. N-type dopant is doped to at least k quantum barrier layers within the i quantum barrier layers, wherein k is an integer greater than or equal to 1. When i is an even number, k is greater than or equal to i/2. When i is a odd number, k is greater than or equal to (i-1)/2. The first electrode and the second electrode are respectively disposed on the n-type semiconductor layer and the second semiconductor layer. Besides, a plurality of light emitting diodes are provided.

Description

[0001] This application is a divisional application, the application number of the parent application is 201310061155.1, the application date (the earliest priority date) is: March 1, 2012, and the invention name is "light-emitting diode". technical field [0002] The invention relates to a light emitting diode, in particular to a light emitting diode (light emitting diode, LED for short) which can improve luminous efficiency. Background technique [0003] A light-emitting diode is a semiconductor element, mainly composed of III-V group element compound semiconductor materials. Because this semiconductor material has the characteristic of converting electrical energy into light, when an electric current is applied to this semiconductor material, the electrons inside it will combine with holes, and the excess energy will be released in the form of light to achieve luminescence. Effect. [0004] Generally speaking, due to the mismatch between the lattice constant of gallium n...

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Application Information

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IPC IPC(8): H01L33/06
CPCH01L33/06
Inventor 傅毅耕
Owner LITE ON TECH CORP
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