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High-speed laser chip

A laser and chip technology, used in lasers, laser parts, semiconductor lasers, etc., can solve problems such as affecting the frequency response characteristics of lasers, and achieve the effects of improving optoelectronic characteristics, reducing leakage current, and reducing capacitance

Pending Publication Date: 2015-11-18
WUHAN TELECOMM DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The disadvantage of high-speed semiconductor lasers in the prior art is that the ridge-type double-groove mesa is prone to generate a large amount of leakage current, and the schematic diagram of leakage current generation is shown in image 3 As shown, the threshold of the laser is increased, and the capacitance C will also be increased at the same time, which will affect the frequency response characteristics of the laser

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Embodiment 1 of the present invention provides a high-speed laser chip, the schematic cross-sectional view of the laser chip structure is as follows figure 2 shown. Its structure specifically includes:

[0052] A substrate 0, which is an N-type InP layer;

[0053] A buffer layer 1, which is an N-type InP layer and formed on the substrate 0;

[0054] A first graded confinement layer 2, which is N-type InAl x Ga 1-x The As layer is formed on the buffer layer 1, x=0.5-0.1;

[0055] An etch stop layer 3, which is an N-type InGaAsP layer and formed on the first graded confinement layer 2;

[0056] A ridge-type double-groove mesa structure is formed on the corrosion stop layer 3, and the ridge-type double-groove mesa structure specifically includes:

[0057] A first waveguide layer 4, which is an N-type InP layer and formed on the etch stop layer 3;

[0058] A second confinement layer 5, which is N-type InAl 0.5 Ga 0.5 An As layer is formed on the first waveguide la...

Embodiment 2

[0078] An embodiment of the present invention provides a method for manufacturing a high-speed laser chip, the method comprising the following steps:

[0079] 1) Buffer layer 1, first graded confinement layer 2, corrosion stop layer 3, first waveguide layer 4, second confinement layer 5, first quantum well barrier layer 6, quantum well active Layer 7, second quantum well barrier layer 8, second waveguide layer 9, first grating layer 10, third graded confinement layer 11, ohmic contact layer 12;

[0080] 2) Coating a photoresist with a thickness of 2 μm on the ohmic contact layer 12 and baking in the range of 88-92°C, and then making a photoresist pattern on the ohmic contact layer 12 through exposure and development, and baking in the range of 118-122°C Under the mask of the photoresist, the ohmic contact layer 12, the graded confinement layer 11, the waveguide layer 10, the second waveguide layer 9, the second quantum well barrier layer 8, the quantum well active layer 7, Th...

Embodiment 3

[0090] In the embodiment of the present invention, the high-speed laser chip obtained after the above-mentioned steps 1)-4) of the entire ridge waveguide processing process is made by using the newly designed structure of the corrosion stop layer as in the first embodiment, and the corresponding test results are obtained through testing. The threshold value of the manufactured laser is reduced from the original 14mA to about 12mA, see Figure 5 , 6 . And the frequency response characteristics are significantly improved, and the bandwidth corresponding to the 3dB range is significantly improved, such as Figure 7 , 8 , where the x-axis represents the frequency, and the y-axis represents the frequency response, by Figure 7 and Figure 8 By comparison, it can be concluded that the optoelectronic characteristics of the entire high-speed laser chip have been greatly improved.

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Abstract

The invention, which belongs to the technical field of the laser, especially relates to a high-speed laser chip comprising a substrate, a buffer layer, a first gradual-changing limitation layer, a corrosion stopping layer 3, a first waveguide layer 4, a first limitation layer 5, a first quantum well barrier layer 6, a quantum well active layer 7, a second quantum well barrier layer 8, a second waveguide layer 9, a grating layer 10, a third gradual-changing limitation layer 11, an ohmic contact layer 12, an insulating medium layer 13, a P type upper electrode 14, and a N type lower electrode 15. According to the invention, the structural position of the corrosion layer is designed again; and compared with the traditional structure, the leakage current can be reduced and the capacitance is also reduced correspondingly, and the electro-optic characteristic of the whole high-speed laser can be improved obviously.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a high-speed laser chip. Background technique [0002] Traditional high-speed semiconductor laser structures such as figure 1 . This high-speed semiconductor laser comprises a substrate 0, a buffer layer 1, a first graded confinement layer 2, a first waveguide layer 3, a second waveguide layer 4, a first quantum well barrier layer 5, and a quantum well with Source layer 6, a second quantum well barrier layer 7, a third waveguide layer 8, an etching stop layer 9, a fourth waveguide layer 10, a second graded confinement layer 11, an ohmic contact layer 12, and an insulating medium layer 13, a P-type upper electrode 14, and an N-type lower electrode 15. [0003] The disadvantage of high-speed semiconductor lasers in the prior art is that the ridge-type double-groove mesa is prone to generate a large amount of leakage current, and the schematic diagram of leakage curr...

Claims

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Application Information

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IPC IPC(8): H01S5/223
CPCH01S5/02H01S5/323
Inventor 罗飚刘应军王任凡汤宝
Owner WUHAN TELECOMM DEVICES