Reaction chamber and semiconductor processing equipment

Abstract

A reaction chamber and semi-conductor processing device, comprising a Faraday shielding ring (21) made of nonconductive magnetic material and an insulating ring (22) made of insulating material; the Faraday shield ring (21) is provided with a slot thereon passing through the ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding the inner peripheral wall of the reaction chamber; the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction; a shielding ring (211) is disposed surrounding the inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area on the lower surface of the Faraday shielding ring (21) adjacent to the center of the reaction chamber; and the shielding ring (211) is made of the nonconductive magnetic material, and is provided with the slot thereon passing through the ring surface thereof in the axial direction. The reaction chamber and the semi-conductor processing device avoid or reduce the risk of sparking, reduce pollution of the reaction chamber caused by the flaking off of metal particles, and increase the inner diameter and available space of the reaction chamber.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment manufacturing, and in particular relates to a reaction chamber and semiconductor processing equipment. Background technique [0002] Magnetron sputtering equipment is a widely used processing equipment, mainly used for the deposition process of substrates. The basic principle of magnetron sputtering is: the reaction gas is excited to form plasma, and the target 26 in the reaction chamber is bombarded by the plasma, so that various particles on the surface of the target 26 escape and deposit on the substrate. In the production of VLSI semiconductor devices, it is usually necessary to deposit metal layers in high aspect ratio channels, trenches or vias on the substrate surface, thus increasing the ion concentration in the plasma in the reaction chamber. [0003] For this, use figure 1 reaction chamber shown, see figure 1 and figure 2 , an induction coil 11 is arranged around the...

AI Technical Summary

Problems solved by technology

[0006] One, since the surface of the metal deposition is the upper surface (i.e., the horizontal plane) of the insulating ring, this makes most of the metal particles downward (i.e., along the vertical direction) when the reaction chamber is exhausted from top to bottom. direction) movement, along with the progress of the process, the metal deposited on the upper surface of the insulating ring 17 is easy to cause the Faraday shielding ring 14 to conduct at the slot position of its lower surface, thereby causing the gap in the slot Sparking is prone to occur at the position, which will affect the process, and then affect the stability of the process; moreover, due to too much deposited metal, excessive metal peeling will cause particle pollution to the reaction chamber, thereby causing serious damage to the substrate;

[0007] Second, in order to avoid the conduction of the Faraday shielding ring 14, the size ratio of the recess 15 in the horizontal direction and the vertical direction of the reaction chamber is usually relatively high, but the thickness of the Faraday shielding ring 14 in its radial direction is relatively large , thus reducing the inner diameter of the reaction chamber and reducing the available space, which will affect the uniformity of the process

Images