Silicon-on-insulator lateral N-type insulated gate bipolar transistor

Abstract

The invention discloses a silicon-on-insulator lateral N-type insulated gate bipolar transistor, which comprises a P-type doped semiconductor substrate, wherein the P-type doped semiconductor substrate is provided with a buried oxide layer on which an N-type drift region is arranged. The N-type drift region is internally provided with an N-type doped semiconductor region with a relatively high concentration. The N-type doped semiconductor region with the relatively high concentration is arranged below a beak region at the right end of a field oxide layer and surrounds the whole beak region, wherein the concentration of the N-type doped semiconductor region is higher than the concentration of the N-type drift region. Meanwhile, an anode contact area of the silicon-on-insulator lateral N-type insulated gate bipolar transistor is formed through alternatively arranging P-type doped areas and N-type doped areas in the width direction of the silicon-on-insulator lateral N-type insulated gate bipolar transistor. In addition, the field oxide layer of the silicon-on-insulator lateral insulated gate bipolar transistor belongs to a second-order field oxide layer. A field plate which is formed through extension of a gate electrode to the part above the field oxide layer is also a second-order field plate. The silicon-on-insulator lateral N-type insulated gate bipolar transistor can effectively improve the lateral voltage resistance level.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and relates to a lateral high-voltage power device, more specifically, a silicon-on-insulator lateral N-type insulated gate bipolar transistor with fast switching speed and large conduction current. Background technique [0002] An insulated gate bipolar transistor (IGBT) is a device that has the advantages of an insulated gate structure of a metal oxide semiconductor (MOS) transistor and the advantages of high current density of a bipolar transistor. It is a device that can be used to effectively reduce the traditional Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a power semiconductor device with conduction losses. [0003] In order to be able to integrate with other semiconductor devices, Lateral Insulated Gate Bipolar Transistor (LIGBT for short) has received extensive attention and rapid development. Similarly, this device has high input impedance, high with...

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Problems solved by technology

However, there is still a parasitic PNPN thyristor structure in SOI-LIGBT. If the sum of the current gains of the NPN transistor and the PNP transistor in the equivalent circuit of the parasitic NPNP thyristor structure is equal to or greater than 1, the PNPN thyristor is When it is turned on, the turn-off performance of the gate is reduced, which is called latch-up, which will lead to device damage in severe cases

Therefore, in the related art, in order to reduce the possibility of latch-up, some people propose to add P-type doped deep well region 5 in SOI-LIGBT, but due to the high concentration of P-type doped deep well region 5, the lateral diffusion The ability is also very strong, so in the process manufacturing engineering, the lateral diffusion of the P-type doped deep well region 5 will make the length of the effective channel longer, and it is possible to make the N-type at the right end of the low-concentration N-type doped semiconductor region 6 The impurity concentration is very low and even becomes P-type. In order to solve this problem, someone proposes to increase the length of the gate so that the gate covers the right part of the N-type doped semiconductor region 6. Although it can ensure that the SOI-LIGBT is normally turned on, this This method increases the length of the channel and reduces the conduction current of SOI-LIGBT

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