Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An optical readout infrared detector structure and its manufacturing method

An infrared detector, optical readout technology, applied in optical radiation measurement, scientific instruments, microstructure technology, etc., can solve the problem of not being able to meet the mechanical strength at the same time, to improve the utilization rate of infrared radiation, ensure safe release, and avoid heat The effect of crosstalk

Active Publication Date: 2017-04-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an optical readout infrared detector structure and its manufacturing method, which is used to solve the problem that the manufacturing method disclosed in the prior art cannot meet the optical readout infrared detection requirements at the same time. The requirements of the device on the mechanical strength of the device, thermal crosstalk, non-destructive release of pixels, utilization of infrared radiation, flatness of the movable micromirror, and utilization of visible light, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An optical readout infrared detector structure and its manufacturing method
  • An optical readout infrared detector structure and its manufacturing method
  • An optical readout infrared detector structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] This embodiment provides an optical readout infrared detector structure, please refer to the attached Figure 3i , attached Figure 4j , attached Figure 5 And attached Image 6 , the infrared detector structure at least includes: a glass substrate 1 and a suspension structure, the suspension structure is suspended on the glass substrate 1 through the second anchor 74 . The suspended structure includes a visible light reflecting layer 3, an infrared absorbing layer 72 and a support beam; the visible light reflecting layer 3 is suspended on the glass substrate 1, and the infrared absorbing layer 72 is suspended above the visible light through a first anchor 71. On the reflective layer 3, the support beam is suspended on the visible light reflective layer 3, and one end of the support beam is connected to the infrared absorbing layer 72 in the same plane, and the other end is fixed to the on a glass substrate 1.

[0078] It should be noted, Figure 3i with 4j yes ...

Embodiment 2

[0084] This embodiment provides a method for fabricating an optical readout infrared detector structure, please refer to the attached Figure 3a-3i , for making the optical readout infrared detector structure in Embodiment 1, the specific implementation steps are as follows:

[0085] First perform step 1, such as Figure 3a~3b As shown, a silicon substrate 2 is provided as a sacrificial substrate, and a glass substrate 1 is provided, the sacrificial substrate is bonded to the glass substrate 1, and the sacrificial substrate is thinned to form a first sacrificial layer twenty one.

[0086] In this step, the silicon substrate 2 is a double-throw silicon wafer, and the glass substrate 1 is a double-throw glass wafer.

[0087] The specific process of this step is:

[0088] (1) Perform anodic bonding of double-polished silicon wafers and double-polished glass wafers at a bonding temperature of 200-450°C and a bonding voltage of 600-1400V, such as Figure 3a shown;

[0089] (2)...

Embodiment 3

[0111] This embodiment additionally provides a method for fabricating an optical readout infrared detector structure, please refer to the appended Figure 4a~4j , for making the optical readout infrared detector structure in Embodiment 1, the specific implementation steps are as follows:

[0112] Wherein step one to step three are the same as embodiment two, corresponding to the attached Figure 4a-4e , which will not be repeated here.

[0113] Then perform step 4, such as Figure 4f As shown, the second sacrificial layer 4 and the first sacrificial layer 21 are etched to form the second anchor region 6 exposing the glass substrate 1 .

[0114] The second sacrificial layer 4 and the first sacrificial layer 21 are etched using a deep reactive ion etching (DRIE) technique to form a second anchor region 6 exposing the surface of the glass substrate 1 .

[0115] In addition to the deep reactive ion etching technology, other suitable etching methods can also be used to etch the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an optical readout infrared detector structure and a manufacturing method thereof. The detector structure comprises at least a glass substrate and a suspended structure suspended over the glass substrate by use of a second anchor; the suspended structure comprises a visible light reflecting layer, an infrared absorbing layer and a supporting beam; the visible light reflecting layer is suspended over the glass substrate; the infrared absorbing layer is suspended over the visible light reflecting layer by use of a first anchor; the supporting beam is suspended over the visible light reflecting layer, and one end of the supporting beam is connected with the infrared absorbing layer within the same plane, while the other end of the supporting beam is fixed over the glass substrate by use of the second anchor. The detector structure has the advantages that the visible light reflecting layer is prevented from deformation due to a double-material effect as the visible light reflecting layer and the infrared absorbing layer are separated from each other, and the utilization rate of the visible light is increased due to the increase of the area of the visible light reflecting layer, and therefore, the infrared detector simultaneously satisfies requirements for devices in various aspects, and moreover, the comprehensive properties of the devices can be improved.

Description

technical field [0001] The invention relates to the field of micro-electromechanical systems, in particular to an optical readout infrared detector structure and a manufacturing method thereof. Background technique [0002] The pixel structure of an optical readout infrared detector generally includes: anchors, support beams (including bimaterial beams and heat-insulating beams), and movable micromirrors. The anchor stands on the substrate, and the movable micromirror is connected with the anchor through the supporting beam, and is suspended on the substrate. Double-material beams are generally composed of two materials with large differences in thermal expansion coefficients, such as metal materials (gold or aluminum or other metal materials) and dielectric materials (silicon oxide or silicon nitride or silicon carbide or their composite films); The thermal insulation beam is made of materials with small thermal conductivity (silicon oxide or silicon nitride or silicon car...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B81C1/00G01J5/00
Inventor 冯飞王跃林李昕欣
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products